Role of fluid mixing in deep dissolution of carbonates

The presence of cavities filled with new minerals in carbonate rocks is a common feature in oil reservoirs and lead-zinc deposits. Since groundwater equilibrates rapidly with carbonates, the presence of dissolution cavities in deep carbonate host rocks is a paradox. Two alternative geochemical processes have been proposed to dissolve carbonates at depth: hydrogen sulfide oxidation to sulfuric acid, and metal sulfide precipitation. With the aid of geochemical modeling we show that mixing two warm solutions saturated with carbonate results in a new solution that dissolves limestone. Variations in the proportion of the end-member fluids can also form a supersaturated mixture and fill the cavity with a new generation of carbonate. Mixing is in general more effective in dissolving carbonates than the aforementioned processes. Moreover, mixing is consistent with the wide set of textures and mineral proportions observed in cavity infillings.

Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy

In this work, we demonstrate that conductive atomic force microscopy (C-AFM) is a very powerful tool to investigate, at the nanoscale, metal-oxide-semiconductor structures with silicon nanocrystals (Si-nc) embedded in the gate oxide as memory devices. The high lateral resolution of this technique allows us to study extremely small areas ( ~ 300nm2) and, therefore, the electrical properties of a reduced number of Si-nc. C-AFM experiments have demonstrated that Si-nc enhance the gate oxide electrical conduction due to trap-assisted tunneling. On the other hand, Si-nc can act as trapping centers. The amount of charge stored in Si-nc has been estimated through the change induced in the barrier height measured from the I-V characteristics. The results show that only ~ 20% of the Si-nc are charged, demonstrating that the electrical behavior at the nanoscale is consistent with the macroscopic characterization.

Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by plasma-enhanced chemical-vapor deposition

Linear and nonlinear optical properties of silicon suboxide SiOx films deposited by plasma-enhanced chemical-vapor deposition have been studied for different Si excesses up to 24¿at.¿%. The layers have been fully characterized with respect to their atomic composition and the structure of the Si precipitates. Linear refractive index and extinction coefficient have been determined in the whole visible range, enabling to estimate the optical bandgap as a function of the Si nanocrystal size. Nonlinear optical properties have been evaluated by the z-scan technique for two different excitations: at 0.80¿eV in the nanosecond regime and at 1.50¿eV in the femtosecond regime. Under nanosecond excitation conditions, the nonlinear process is ruled by thermal effects, showing large values of both nonlinear refractive index (n2 ~ ¿10¿8¿cm2/W) and nonlinear absorption coefficient (ß ~ 10¿6¿cm/W). Under femtosecond excitation conditions, a smaller nonlinear refractive index is found (n2 ~ 10¿12¿cm2/W), typical of nonlinearities arising from electronic response. The contribution per nanocrystal to the electronic third-order nonlinear susceptibility increases as the size of the Si nanoparticles is reduced, due to the appearance of electronic transitions between discrete levels induced by quantum confinement.

Frequency resolved admittance spectroscopy measurements on In0.52Al0.48As/InxGa1¿xAs/In0.52Al0.48As single quantum well structures

In this work a new admittance spectroscopy technique is proposed to determine the conduction band offset in single quantum well structures (SQW). The proposed technique is based on the study of the capacitance derivative versus the frequency logarithm. This method is found to be less sensitive to parasitic effects, such as leakage current and series resistance, than the classical conductance analysis. Using this technique, we have determined the conduction band offset in In0.52Al0.48As/InxGa1¿xAs/In0.52Al0.48As SQW structures. Two different well compositions, x=0.53, which corresponds to the lattice¿matched case and x=0.60, which corresponds to a strained case, and two well widths (5 and 25 nm) have been considered. The average results are ¿Ec=0.49±0.04 eV for x=0.53 and ¿Ec =0.51±0.04 eV for x=0.6, which are in good agreement with previous reported data.

Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon

Electrical transport in a modulation doped heterostructure of In0.53Ga0.47As/In0.52Al0.48As grown on Si by molecular beam epitaxy has been measured. Quantum Hall effect and Subnikov¿De Haas oscillations were observed indicating the two¿dimensional character of electron transport. A mobility of 20¿000 cm2/V¿s was measured at 6 K for an electron sheet concentration of 1.7×1012 cm¿2. Transmission electron microscopy observations indicated a significant surface roughness and high defect density of the InGaAs/InAlAs layers to be present due to the growth on silicon. In addition, fine¿scale composition modulation present in the In0.53Ga0.47As/In0.52Al0.48As may further limit transport properties.

Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

The origin of the microscopic inhomogeneities in InxGa12xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8 mm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05,x,0.8). On the other hand, in thin enough layers strain inhomogeneities are dominant. This evolution in line with layer thickness is due to the atomic diffusion at the surface during growth, induced by the strain inhomogeneities that arise from stress relaxation. In consequence, the strain variations present in the layer are converted into composition variations during growth. This process is energetically favorable as it diminishes elastic energy. An additional support to this hypothesis is given by a clear proportionality between the magnitude of the composition variations and the mean strain.

Raman scattering of InSb quantum dots grown on InP substrates

In this paper we present the Raman scattering of self-assembled InSb dots grown on (001) oriented InP substrates. The samples were grown by pulsed molecular beam epitaxy mode. Two types of samples have been investigated. In one type the InSb dots were capped with 200 monolayers of InP; in the other type no capping was deposited after the InSb dot formation. We observe two peaks in the Raman spectra of the uncapped dot, while only one peak is observed in the Raman spectra of the capped dots. In the case of the uncapped dots the peaks are attributed to LO-like and TO-like vibration of completely relaxed InSb dots, in agreement with high resolution transmission electron microscopy photographs. The Raman spectra of the capped dot suggest a different strain state in the dot due to the capping layer.

Influence of configurational atomic order on the relative stability of bcc and close-packed structures in Cu-based alloys

We present a study of the influence of atomic order on the relative stability of the bcc and the 18R martensitic structures in a Cu2.96Al0.92Be0.12 crystal. Calorimetric measurements have shown that disorder increases the stability of the 18R phase, contrary to what happens in Cu-Zn-Al alloys for which it is the bcc phase that is stabilized by disordering the system. This different behavior has been explained in terms of a model recently reported. We have also proved that the entropy change at the martensitic transition is independent of the state of atomic order of the crystal, as predicted theoretically. Our results suggest that differences in the vibrational spectrum of the crystal due to different states of atomic order must be equal in the bcc and in the close-packed phases.

Local description of quantum inseparability

We show how to decompose any density matrix of the simplest binary composite systems, whether separable or not, in terms of only product vectors. We determine for all cases the minimal number of product vectors needed for such a decomposition. Separable states correspond to mixing from one to four pure product states. Inseparable states can be described as pseudomixtures of four or five pure product states, and can be made separable by mixing them with one or two pure product states.

Effective one-dimensional square well for two-dimensional quantum wires

The symmetrical two-dimensional quantum wire with two straight leads joined to an arbitrarily shaped interior cavity is studied with emphasis on the single-mode approximation. It is found that for both transmission and bound-state problems the solution is equivalent to that for an energy-dependent one-dimensional square well. Quantum wires with a circular bend, and with single and double right-angle bends, are examined as examples. We also indicate a possible way to detect bound states in a double bend based on the experimental setup of Wu et al.