Computational calculations of magnetic relaxation and viscosity in small magnetic grains

In this article we present a phenomenological model which simulates very well the mag¿ netic relaxation behavior experimentally observed in small magnetic grains and single domain particles. In this model, the occurrence of quantum tunneling of magnetization below a certain temperature is taken into account. Experimental results for different materials are presented to illustrate the most important behavior deduced from our model

Steps in the hysteresis of a high spin molecule

We report the first observation of steps in the hysteresis loop of a high¿spin molecular magnet. We propose that the steps, which occur every 0.46 T, are due to thermally assisted resonant tunneling between different quantum spin states. Magnetic relaxation increases dramatically when the field is in the neighborhood of a step. A simple model accounts for the observations and predicts a value for the anisotropy barrier consistent with that inferred from the superparamagnetic blocking temperature

Effect of a transverse magnetic field on resonant magnetization tunneling in high-spin molecules

The recent observation of steps at regular intervals of magnetic field in the hysteresis loops of oriented crystals of the spin-10 molecular magnet Mn12O12(CH3COO)16(H2O)4 has been attributed to resonant tunneling between spin states. Here, we investigate the effect on the relaxation rate of applying the magnetic field at an angle with respect to the easy axis of magnetization. We find that the position of the resonances is independent of the transverse component of the field, and is determined solely by the longitudinal component. On the other hand, a transverse field significantly increases the relaxation rate, both on and off resonance. We discuss classical and quantum mechanical interpretations of this effect

Quantum tunneling of magnetization in single domain particles

We present a study of the magnetic relaxation of several ferrofluids composed of particles of about 40 Å in diameter (Fe3O4FeC, CoFe2O4). Our key observation is a nonthermal character of the relaxation below 3 K for the CoFe2O4 ferrofluid and below 1 K for the FeC ferrofluid. The crossover temperature from thermal to nonthermal (quantum) regime is in accordance with theoretical suggestions of macroscopic quantum tunneling of magnetization in single doma in particles

Quantum tunneling of domain walls in ferromagnets

We present a theoretical study of the quantum depinning of domain walls. Our approach extends earlier work by Stamp and confirms his suggestion that quantum tunneling of domain walls in ferromagnets may reveal itself at a macroscopic level in a manner similar to the Josephson effect in superconductors. The rate of tunneling of a domain wall through a barrier formed by a planar defect is calculated in terms of macroscopic parameters of the ferromagnet. A universal behavior of the WKB exponent in the limit of small barriers is demonstrated. The effect of dissipation on the tunneling rate is studied. It is argued that quantum diffusion of domain walls apparently explains a nonthermal magnetic relaxation observed in some materials at low temperatures.

Quantum relaxation in random magnets

We present a comprehensive study of the low-temperature magnetic relaxation in random magnets. The first part of the paper contains theoretical analysis of the expected features of the relaxation, based upon current theories of quantum tunneling of magnetization. Models of tunneling, dissipation, the crossover from the thermal to the quantum regime, and the effect of barrier distribution on the relaxation rate are discussed. It is argued that relaxation-type experiments are ideally suited for the observation of magnetic tunneling, since they automatically provide the condition of very low barriers. The second part of the paper contains experimental results on transition-metal¿rare-earth amorphous magnets. Structural and magnetic characterization of materials is presented. The temperature and field dependence of the magnetic relaxation is studied. Our key observation is a nonthermal character of the relaxation below a few kelvin. The observed features are in agreement with theoretical suggestions on quantum tunneling of magnetization.

Quantum tunneling of vortices in the Tl2CaBa2Cu2O8 superconductor

Magnetic-relaxation measurements of a Tl-based high-Tc superconductor show temperature-independent flux creep below 6 K. The effect is analyzed in terms of the overdamped quantum diffusion of two-dimensional vortices. Good agreement between theory and experiment is found.

Magnetism of isolated Mn12 single-molecule magnets detected by magnetic circular dichroism: Observation of spin tunneling with a magneto-optical technique

We report magnetic and magneto-optical measurements of two Mn12 single-molecule magnet derivatives isolated in organic glasses. Field-dependent magnetic circular dichroism (MCD) intensity curves (hysteresis cycles) are found to be essentially identical to superconducting quantum interference device magnetization results and provide experimental evidence for the potential of the optical technique for magnetic characterization. Optical observation of magnetic tunneling has been achieved by studying the decay of the MCD signal at weak applied magnetic field

Magnetism of isolated Mn12 single-molecule magnets detected by magnetic circular dichroism: Observation of spin tunneling with a magneto-optical technique

We report magnetic and magneto-optical measurements of two Mn12 single-molecule magnet derivatives isolated in organic glasses. Field-dependent magnetic circular dichroism (MCD) intensity curves (hysteresis cycles) are found to be essentially identical to superconducting quantum interference device magnetization results and provide experimental evidence for the potential of the optical technique for magnetic characterization. Optical observation of magnetic tunneling has been achieved by studying the decay of the MCD signal at weak applied magnetic field

Utilización de análogos fluorados de la feromona sexual de Sesamia nonagrioides Lef. como inhibidores de su actividad biológica

Se ha estudiado el papel, como inhibidores de la acción feromonal, de determinados fluoroderivados, análogos estructurales del acetato de (Z)-l 1-hexadecenilo, componente principal de la feromona sexual del noctuido Sesamia nonagrioides Lef. Dichos compuestos fueron los análogos fluoroacetato (mono, di y trifluoroacetato de (Z)-l 1-hexadecenilo) y la trifluorometilcetona análoga [(Z)-1,1,1 -trifluoro-14-nonadecen-2-ona]. La acción inhibidora fue evaluada a partir de los resultados de actividad electrofisiológica (pruebas de electroantenograma, EAG), de estudios de comportamiento en pruebas de túnel de viento y de pruebas de capturas en campo. Los acetatos fluorados, especialmente el mono y el trifluoracetato, se mostraron como buenos inhibidores de la acción atrayente de la feromona en los tres tipos de pruebas realizadas, mientras que la trifluorometilcetona análoga mostró una actividad mucho menor.

Large Magnetoresistance in Fe/MgO/FeCo(001) Epitaxial Tunnel-Junctions on GaAs(001).

We present tunneling experiments on Fe~001!/MgO~20 Å!/FeCo~001! single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give 60% at 30 K, to be compared with 13% obtained recently on ~001!-oriented Fe/amorphous-Al2O3 /FeCo tunnel junctions. This difference demonstrates that the spin polarization of tunneling electrons is not directly related to the density of states of the free metal surface Fe~001! in this case but depends on the actual electronic structure of the entire electrode/barrier system.

Catalytic gates for gas sensors based on SiC technology

En este trabajo se presenta un estudio químico y estructural de las capas metálicas de Pt y TaSix utilizadas como puerta catalítica en sensores de gas de alta temperatura basados en dispositivos MOS de SiC. Para ello se han depositado capas de diferentes espesores sobre substratos de Si. Los resultados muestran que con la reducción del espesor de Pt y con un recocido se consigue aumentar la rugosidad de las capas de puerta, lo que debería aumentar la sensibilidad y la velocidad de respuesta de los dispositivos que las incorporasen. Otro efecto del recocido es la transformación química del material de la puerta que, para capas delgadas de Pt con TaSix, produce la transformación total Pt en Pt2Ta, lo que podría afectar a las características catalíticas de la puerta. Los primeros resultados eléctricos indican que, a pesar de que las capas de Pt empleadas son gruesas y compactas, los diodos MOS túnel de SiC son sensibles a los gases CO y NO2, aunque presentan una velocidad de respuesta bastante lenta.