Growth of semi-polar GaN on high index silicon (11h) substrates by metal organic vapor phase epitaxy

Magdeburg, Univ., Fak. für Naturwiss., Diss., 2014

Data Processing at the Flaw Detector with Combined Multisector Eddy-Current Transducer

There is described data processing at the flaw detector with combined multisectional eddy-current transducer and heterofrequency magnetic field. The application of this method for detecting flaws in rods and pipes under the conditions of significant transverse displacements is described.