32 resultados para organic semiconductors organic field-effect transistors


Relevância:

100.00% 100.00%

Publicador:

Resumo:

IEEE Electron Device Letters, VOL. 29, NO. 9,

Relevância:

100.00% 100.00%

Publicador:

Resumo:

This work reports the development of field-effect transistors (FETs), whose channel is based on zinc oxide (ZnO) nanoparticles (NPs). Using screen-printing as the primary deposition technique, different inks were developed, where the semiconducting ink is based on a ZnO NPs dispersion in ethyl cellulose (EC). These inks were used to print electrolyte-gated transistors (EGTs) in a staggered-top gate structure on glass substrates, using a lithium-based polymeric electrolyte. In another approach, FETs with a staggered-bottom gate structure on paper were developed using a sol-gel method to functionalize the paper’s surface with ZnO NPs, using zinc acetate dihydrate (ZnC4H6O4·2H2O) and sodium hydroxide (NaOH) as precursors. In this case, the paper itself was used as dielectric. The various layers of the two devices were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier Transform Infrared spectroscopy (FTIR), thermogravimetric and differential scanning calorimetric analyses (TG-DSC). Electrochemical impedance spectroscopy (EIS) was used in order to evaluate the electric double-layer (EDL) formation, in the case of the EGTs. The ZnO NPs EGTs present electrical modulation for annealing temperatures equal or superior to 300 ºC and in terms of electrical properties they showed On/Off ratios in the order of 103, saturation mobilities (μSat) of 1.49x10-1 cm2(Vs)-1 and transconductance (gm) of 10-5 S. On the other hand, the ZnO NPs FETs on paper exhibited On/Off ratios in the order of 102, μSat of 4.83x10- 3 cm2(Vs)-1and gm around 10-8 S.

Relevância:

100.00% 100.00%

Publicador:

Resumo:

Dissertação para obtenção do Grau de Doutor em Nanotecnologias e Nanociências

Relevância:

100.00% 100.00%

Publicador:

Resumo:

This thesis reports the work performed in the optimization of deposition parameters of Multi – Walled Carbon Nanotubes (MWCNT) targeting the development of a Field Effect Transistors (FET) on paper substrates. The CNTs were dispersed in a water solution with sodium dodecyl sulphate (SDS) through ultrasonication, ultrasonic bath and a centrifugation to remove the supernatant and have a homogeneous solution. Several deposition tests were performed using different types of CNTs, dis-persants, papers substrates and deposition techniques, such as spray coating and inkjet printing. The characterization of CNTs was made by Scanning Electron Microscopy (SEM) and Hall Effect. The most suitable CNT coatings able to be used as semiconductor in FETs were deposited by spray coat-ing on a paper substrate with hydrophilic nanoporous surface (FS2) at 100 ºC, 4 bar, 10 cm height, 5 second of deposition time and 90 seconds of drying between steps (4 layers of CNTs were deposited). Planar electrolyte gated FETs were produced with these layers using gold-nickel gate, source and drain electrodes. Despite the small current modulation (Ion/Ioff ratio of 1.8) one of these devices have p-type conduction with a field effect mobility of 1.07 cm2/V.s.

Relevância:

100.00% 100.00%

Publicador:

Resumo:

Advanced Materials, Vol. 17, nº 5

Relevância:

100.00% 100.00%

Publicador:

Resumo:

This work will discuss the use of different paper membranes as both the substrate and dielectric for field-effect memory transistors. Three different nanofibrillated cellulose membranes (NFC) were used as the dielectric layer of the memory transistors (NFC), one with no additives, one with an added polymer PAE and one with added HCl. Gallium indium zinc oxide (GIZO) was used as the device’s semiconductor and gallium aluminium zinc oxide (GAZO) was used as the gate electrode. Fourier transform infrared spectroscopy (FTIR) was used to access the water content of the paper membranes before and after vacuum. It was found that the devices recovered their water too quickly for a difference to be noticeable in FTIR. The transistor’s electrical performance tests yielded a maximum ION/IOFF ratio of around 3,52x105 and a maximum subthreshold swing of 0,804 V/decade. The retention time of the dielectric charge that grants the transistor its memory capabilities was accessed by the measurement of the drain current periodically during 144 days. During this period the mean drain current did not lower, leaving the retention time of the device indeterminate. These results were compared with similar devices revealing these devices to be at the top tier of the state-of-the-art.

Relevância:

100.00% 100.00%

Publicador:

Resumo:

Applied Physics Letters, Vol.93, issue 20

Relevância:

50.00% 50.00%

Publicador:

Resumo:

In this thesis was investigated the radiation hardness of the building blocks of a future flexible X-ray sensor system. The characterized building blocks for the pixel addressing and signal amplification electronics are high mobility semiconducting oxide transistors (HMSO-TFTs) and organic transistors (OTFTs), whereas the photonic detection system is based on organic semiconducting single crystals (OSSCs). TFT parameters such as mobility, threshold voltage and subthreshold slope were measured as function of cumulative X-ray dose. Instead for OSSCs conductivity and X-ray sensitivity were analysed after various radiation steps. The results show that ionizing radiation does not lead to degradation in HMSO-TFTs. Instead OTFTs show instability in mobility which is reduced up to 73% for doses of 1 kGy. OSSC demonstrate stable detector properties for the tested total dose range. As conclusion, HMSO-TFTs and OSSCs can be readily employed in the X-ray detector system allowing operation for total doses exceeding 1 kGy of ionizing radiation.

Relevância:

40.00% 40.00%

Publicador:

Resumo:

Integrally asymmetric skinned Lenzing P84 and Matrimid 5218 polymide membranes and Ultem 1000 polyetherimide membranes were prepared. Crosslinking of membranes using aliphatic diamines resulted in marked improvement in chemical stability. This however resulted in a decline in flux with only Lenzing P84 demonstrating good flux in DMF. Further variation of membrane dope parameters and operating conditions allowed for good control of the MWCO of membranes made from Lenzing P84. SEM pictures of Lenzing P84 membranes revealed a significant difference in membranes morphology. The presence of macrovoids increased when using more DMF in the dope solution. These studies demonstrate the possibility of developing OSN membranes using different polyimides and opens up future possibilities for controlling the MWCO of these membranes. Preliminary modelling demonstrates that good control of the MWCO could extend the application of OSN membranes to allow the fraction of molecules in the NF range.

Relevância:

40.00% 40.00%

Publicador:

Resumo:

Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para a obtenção do grau de Mestre em Engenharia Química e Bioquímica

Relevância:

40.00% 40.00%

Publicador:

Resumo:

Thesis submitted to Faculdade de Ciências e Tecnologia from Universidade Nova de Lisboa in partial fulfillment of the requirements for the obtention of the degree of Master of Science in Biotechnology

Relevância:

40.00% 40.00%

Publicador:

Resumo:

Disserta ção apresentada para obten ção do Grau de Mestre em Engenharia Química e Bioquímica

Relevância:

40.00% 40.00%

Publicador:

Resumo:

Dissertação para obtenção do Grau de Mestre em Engenharia Química e Bioquímica

Relevância:

40.00% 40.00%

Publicador:

Resumo:

Dissertation to obtain the academic degree of Master in materials engineering submitted to the Faculty of science and engineering of Universidade Nova de Lisboa