GA topology optimization using random keys for tree encoding of structures

Topology optimization consists in finding the spatial distribution of a given total volume of material for the resulting structure to have some optimal property, for instance, maximization of structural stiffness or maximization of the fundamental eigenfrequency. In this paper a Genetic Algorithm (GA) employing a representation method based on trees is developed to generate initial feasible individuals that remain feasible upon crossover and mutation and as such do not require any repairing operator to ensure feasibility. Several application examples are studied involving the topology optimization of structures where the objective functions is the maximization of the stiffness and the maximization of the first and the second eigenfrequencies of a plate, all cases having a prescribed material volume constraint.

Construção de um biossensor para o doseamento de ureia baseado na inibição enzimática da amidase de pseudomonas aeruginosa com recurso a um eléctrodo selectivo de iões amónio

Era objectivo do presente trabalho o desenvolvimento de um biossensor baseado na inibição da amidase de Pseudomonas aeruginosa para a quantificação de ureia em diversas amostras com recurso a um eléctrodo selectivo de iões amónio (ISE). A ureia é um poderoso inibidor do centro activo da amidase (Acilamida hidrolase EC 3.5.1.4) de Pseudomonas aeruginosa a qual catalisa a hidrólise de amidas alifáticas produzindo o ácido correspondente e amónia. O extracto celular de Pseudomonas aeruginosa L10 contendo actividade de amidase foi imobilizado em membranas de poliétersulfona modificadas (PES) e em membranas de nylon Porablot NY Plus na presença de gelatina e de glutaraldeído (GA) como agente bifuncional. Estas membranas foram posteriormente utilizadas na construção do biossensor baseado no ISE, utilizando acetamida como substrato, a reacção enzimática foi seguida medindo os iões amónio produzidos pela hidrólise da amida alifática, e a resposta do biossensor apresentada como a velocidade inicial da reacção (mV.min-1). A optimização dos parâmetros de imobilização foi efectuada de acordo com a metodologia ANOVA. Assim, a mistura de 30μL extracto celular, 2μL GA (5%) e 10 μL Gelatina 15% (p/v) foi a que conduziu a uma melhor resposta do biossensor. Efectuou-se ainda o estudo de optimização de alguns parâmetros experimentais pH e tempo de incubação em ureia, este conduziu ao valor pH=7,2 como pH óptimo de resposta do biossensor e 20 min como tempo óptimo de incubação das membranas nas soluções de ureia, sendo neste caso a resposta do biossensor dada pela diferença das respostas do biossensor antes e após incubação. A calibração do biossensor foi efectuada em soluções contendo concentrações conhecidas de ureia preparadas em tampão Tris, leite e vinho caseiro, exibindo um limite de detecção de 2,0 ×10-6 M de ureia. A incubação das membranas em hidroxilamina 2M por um período de 2h permitiu a recuperação de 70% da actividade enzimática da membrana. O biossensor apresentou uma elevada estabilidade de armazenamento por um período de 55 dias revelando uma perda de apenas 15% da sua resposta. O biossensor desenvolvido apresenta uma sensibilidade de 58,245 mV.min-1 e um tempo de resposta de aproximadamente 20s. A resposta do biossensor foi linear para concentrações de ureia presentes no vinho na gama de 4-10 μM de ureia.

Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes

We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 degrees C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p(+) nc-Si:H as a window layer, complete p-i-n structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers.

Bias dependent photocurrent collection in p-i-n a-Si : EVSiC : H heterojunction

A series of large area single layers and heterojunction cells in the assembly glass/ZnO:Al/p (SixC1-x:H)/i (Si:H)/n (SixC1-x:H)/Al (0

Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunction

A series of large area single layers and glass/ZnO:AVp(SixC1-x:H)/i(Si:H)/n(SixC1-x:H)/AI (0 < x < 1) heterojunction cells were produced by plasma-enhanced chemical vapour deposition (PE-CVD) at low temperature. Junction properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage (J-V) and capacitance-voltage (C-V) characteristics. For the heterojunction cells atypical J-V characteristics under different illumination conditions are observed leading to poor fill factors. High series resistances around 106 Q are also measured. These experimental results were used as a basis for the numerical simulation of the energy band diagram, and the electrical field distribution of the structures. Further comparison with the sensor performance gave satisfactory agreement. Results show that the conduction band offset is the most limiting parameter for the optimal collection of the photogenerated carriers. As the optical gap increases and the conductivity of the doped layers decreases, the transport mechanism changes from a drift to a diffusion-limited process.

Laser scanned photodiodes (LSP) for Image sensing

An optimized ZnO:Al/a-pin SixCl1-x:H/Al configuration for the laser scanned photodiode (LSP) imaging detector is proposed. The LSP utilizes light induced depletion layers as detector and a laser beam for readout. The effect of the sensing element structure, cell configuration and light source flux are investigated and correlated with the sensor output characteristics. Experimental data reveal that the large optical gap and the low conductivity of the doped a-SixC1-x:H layers are responsible by an induced inversion layer at the illuminated interfaces which blocks the carrier collection. These insulator-like layers act as MIS gates preventing image smearing. The physical background of the LSP is discussed.

Laser scanned photodiodes (LSPs) for image sensing

An optimized ZnO:Al/a-pin SixC1-x:H/Al configuration for the laser scanned photodiode (LSP) imaging detector is proposed and the read-out parameters improved. The effect of the sensing element structure, cell configuration and light source flux are investigated and correlated with the sensor output characteristics. Data reveals that for sensors with wide band gap doped layers an increase on the image signal optimized to the blue is achieved with a dynamic range of two orders of magnitude, a responsivity of 6 mA W-1 and a sensitivity of 17 muW cm(-2) at 530 nm. The main output characteristics such as image responsivity, resolution, linearity and dynamic range were analyzed under reverse, forward and short circuit modes. The results show that the sensor performance can be optimized in short circuit mode. A trade-off between the scan time and the required resolution is needed since the spot size limits the resolution due to the cross-talk between dark and illuminated regions leading to blurring effects.

New p-i-n Si : H imager configuration for spatial resolution improvement

Amorphous glass/ZnO-Al/p(a-Si:H)/i(a-Si:H)/n(a-Si1-xCx:H)/Al imagers with different n-layer resistivities were produced by plasma enhanced chemical vapour deposition technique (PE-CVD). An image is projected onto the sensing element and leads to spatially confined depletion regions that can be readout by scanning the photodiode with a low-power modulated laser beam. The essence of the scheme is the analog readout, and the absence of semiconductor arrays or electrode potential manipulations to transfer the information coming from the transducer. The influence of the intensity of the optical image projected onto the sensor surface is correlated with the sensor output characteristics (sensitivity, linearity blooming, resolution and signal-to-noise ratio) are analysed for different material compositions (0.5 < x < 1). The results show that the responsivity and the spatial resolution are limited by the conductivity of the doped layers. An enhancement of one order of magnitude in the image intensity signal and on the spatial resolution are achieved at 0.2 mW cm(-2) light flux by decreasing the n-layer conductivity by the same amount. A physical model supported by electrical simulation gives insight into the image-sensing technique used.

Tuning the spectral distribution of p-i-n a-SiC : H devices for colour detection

ZnO:Al/p (SiC:H)/i (Si:H)/n (SiC:H) large area image and colour sensor are analysed. Carrier transport and collection efficiency are investigated from dark and illuminated current-voltage (I-V) dependence and spectral response measurements under different optical and electrical bias conditions. Results show that the carrier collection depends on the optical bias and on the applied voltage. By changing the electrical bias around the open circuit voltage it is possible to filter the absorption at a given wavelength and so to tune the spectral sensitivity of the device. Transport and optical modelling give insight into the internal physical process and explain the bias control of the spectral response and the image and colour sensing properties of the devices.

Boron-doped nanocrystalline silicon thin films for solar cells

This article reports on the structural, electronic, and optical properties of boron-doped hydrogenated nanocrystalline silicon (nc-Si: H) thin films. The films were deposited by plasma-enhanced chemical vapour deposition (PECVD) at a substrate temperature of 150 degrees C. Crystalline volume fraction and dark conductivity of the films were determined as a function of trimethylboron-to-silane flow ratio. Optical constants of doped and undoped nc-Si: H were obtained from transmission and reflection spectra. By employing p(+) nc-Si: H as a window layer combined with a p' a-SiC buffer layer, a-Si: H-based p-p'-i-n solar cells on ZnO:Al-coated glass substrates were fabricated. Device characteristics were obtained from current-voltage and spectral-response measurements. (C) 2011 Elsevier B. V. All rights reserved.

Increasing source to image distance for AP pelvis imaging: impact on radiation dose and image quality

Aim - A quantative primary study to determine whether increasing source to image distance (SID), with and without the use of automatic exposure control (AEC) for antero-posterior (AP) pelvis imaging, reduces dose whilst still producing an image of diagnostic quality. Methods - Using a computed radiography (CR) system, an anthropomorphic pelvic phantom was positioned for an AP examination using the table bucky. SID was initially set at 110 cm, with tube potential set at a constant 75 kVp, with two outer chambers selected and a fine focal spot of 0.6 mm. SID was then varied from 90 cm to 140 cm with two exposures made at each 5 cm interval, one using the AEC and another with a constant 16 mAs derived from the initial exposure. Effective dose (E) and entrance surface dose (ESD) were calculated for each acquisition. Seven experienced observers blindly graded image quality using a 5-point Likert scale and 2 Alternative Forced Choice software. Signal-to-Noise Ratio (SNR) was calculated for comparison. For each acquisition, femoral head diameter was also measured for magnification indication. Results - Results demonstrated that when increasing SID from 110 cm to 140 cm, both E and ESD reduced by 3.7% and 17.3% respectively when using AEC and 50.13% and 41.79% respectively, when the constant mAs was used. No significant statistical (T-test) difference (p = 0.967) between image quality was detected when increasing SID, with an intra-observer correlation of 0.77 (95% confidence level). SNR reduced slightly for both AEC (38%) and no AEC (36%) with increasing SID. Conclusion - For CR, increasing SID significantly reduces both E and ESD for AP pelvis imaging without adversely affecting image quality.

Alterações na grelha de Amsler na presença de catarata adquirida

Objectivos - Identificar a existência de alterações na Grelha de Amsler (GA) em indivíduos com catarata, comparados com um grupo de controlo sem catarata. Investigar a utilidade do teste da GA na complementação de informação relativamente a opacidades dos meios transparentes. Metodologia - Amostra de 171 indivíduos: 82 portadores de catarata bilateral (Grupo 1), e 89 sem catarata para o grupo de controlo (Grupo 2). Avaliou-se a acuidade visual (AV) monocular para longe e binocular para perto, GA, reflexos pupilares, teste de reflexo vermelho e oftalmoscopia. Definiu-se como variável dependente a catarata e como variáveis independentes, as restantes variáveis referidas anteriormente. Estudo de caso controlo, descritivo e correlacional. Resultados - Idade média 72,16 ± 6,50 anos, com 46,8% do género masculino e 53,2% do género feminino. Utilizam correcção óptica, 84,15% no Grupo 1 e 85,39% no Grupo 2. A média de AV para longe foi superior no Grupo 2 (Grupo 1 foi de 0,50 ±0,25 e no Grupo 2 foi de 0,63 ±0,29. Relativamente ao fundo ocular (FO) no Grupo 1 foram detectados 20,73% de casos alterados, 13,41% normais e 65,85% dos casos foi impossível realizar o exame. No Grupo 2 os valores foram de 28,09%, 38,20% e 33,71% respectivamente. Na GA verificaram-se 45,12% (37) de casos alterados no Grupo 1 e 23,60% (21) alterados no Grupo 2. Destes 21 indivíduos, 61,90% (13) apresentavam alteração na grelha de Amsler e do FO, enquanto que, no Grupo 1, esta condição verificou-se em 13,51% (5). Discussão / Conclusão - No estudo realizado não foi possível verificar uma relação entre as variáveis em estudo mas sim uma associação entre os grupos de estudo. Sendo assim, afirma-se que existe uma associação entre alterações da Grelha de Amsler em indivíduos com suspeita de catarata. Observou-se nos resultados efectuados uma percentagem considerável de pacientes com suspeita de cataratas com alteração na Grelha de Amsler. De modo a ter resultados mais fidedignos, relacionou-se os resultados do teste de Grelha de Amsler com os da fundoscopia, onde foi demonstrado que existia alterações na Grelha de Amsler em indivíduos com suspeita de cataratas que apresentavam normalidade na fundoscopia. Uma das possíveis razões por não se encontrar relação entre as variáveis estudadas, pode ter sido devido à elevada percentagem de indivíduos onde foi impossível realizar o teste de fundoscopia, impedindo de verificar se o fundo ocular apresentava normalidade ou não nos grupos de estudo. Outra limitação do estudo, foi o facto do estudo ter sido realizado no âmbito de rastreio visual, sendo impossível o diagnóstico da suspeita de catarata observada no rastreio. Tendo em conta os resultados obtidos, não se pode concluir que nesta amostra a suspeita de catarata leva a alterações na grelha de Amsler, contudo esta pode ter influência na presença de catarata, quando não existe alterações maculares. Este teste pode ser bastante eficiente na medida de rastreios visuais, em cuidados de saúde primários ou escassez de recursos, levando a uma indicação de alterações que podem estar presentes.

Automatic tunning of Okumura-Hata model on railway communications

This paper presents the Genetic Algorithms (GA) as an efficient solution for the Okumura-Hata prediction model tuning on railways communications. A method for modelling the propagation model tuning parameters was presented. The algorithm tuning and validation were based on real networks measurements carried out on four different propagation scenarios and several performance indicators were used. It was shown that the proposed GA is able to produce significant improvements over the original model. The algorithm developed is currently been used on real GSM-R network planning process for an enhanced resources usage.

Logarithmically proportional objective function for planar surfaces recognition in 3D point cloud

3D laser scanning is becoming a standard technology to generate building models of a facility's as-is condition. Since most constructions are constructed upon planar surfaces, recognition of them paves the way for automation of generating building models. This paper introduces a new logarithmically proportional objective function that can be used in both heuristic and metaheuristic (MH) algorithms to discover planar surfaces in a point cloud without exploiting any prior knowledge about those surfaces. It can also adopt itself to the structural density of a scanned construction. In this paper, a metaheuristic method, genetic algorithm (GA), is used to test this introduced objective function on a synthetic point cloud. The results obtained show the proposed method is capable to find all plane configurations of planar surfaces (with a wide variety of sizes) in the point cloud with a minor distance to the actual configurations. © 2014 IEEE.

A resource for signs and Feynman diagrams of the standart model

When performing a full calculation within the standard model (SM) or its extensions, it is crucial that one utilizes a consistent set of signs for the gauge couplings and gauge fields. Unfortunately, the literature is plagued with differing signs and notations. We present all SM Feynman rules, including ghosts, in a convention-independent notation, and we table the conventions in close to 40 books and reviews.