HVDC transmission systems: Bipolar back-to-back diode clamped multilevel converter with fastoptimum-predictive control and capacitor balancing strategy

Voltage source multilevel power converter structures are being considered for high power high voltage applications where they have well known advantages. Recently, full back-to-back connected multilevel neutral diode clamped converters (NPC) have been used in high voltage direct current (HVDC) transmission systems. Bipolar back-to-back connection of NPCs have advantages in long distance HVDC transmission systems, but highly increased difficulties to balance the dc capacitor voltage dividers on both sending and receiving end NPCs. This paper proposes a fast optimum-predictive controller to balance the dc capacitor voltages and to control the power flow in a long distance HVDCsystem using bipolar back-to-back connected NPCs. For both converter sides, the control strategy considers active and reactive power to establish ac grid currents on sending and receiving ends, while guaranteeing the balancing of both NPC dc bus capacitor voltages. Furthermore, the fast predictivecontroller minimizes the semiconductor switching frequency to reduce global switching losses. The performance and robustness of the new fast predictive control strategy and the associated dc capacitors voltage balancing are evaluated. (C) 2011 Elsevier B.V. All rights reserved.

On the Problem of Balancing the DC Capacitor Voltage Divider in Back-to-Back Multilevel Converters

This paper presents a new generalized solution for DC bus capacitors voltage balancing in back-to-back m level diode-clamped multilevel converters connecting AC networks. The solution is based on the DC bus average power flow and exploits the switching configuration redundancies. The proposed balancing solution is particularized for the back-to-back multilevel structure with m=5 levels. This back-to-back converter is studied working with bidirectional power flow, connecting an induction machine to the power grid.

Solid-state Marx based two-switch voltage modulator for the On-Line Isotope Mass Separator accelerator at the European Organization for Nuclear Research

A new circuit topology is proposed to replace the actual pulse transformer and thyratron based resonant modulator that supplies the 60 kV target potential for the ion acceleration of the On-Line Isotope Mass Separator accelerator, the stability of which is critical for the mass resolution downstream separator, at the European Organization for Nuclear Research. The improved modulator uses two solid-state switches working together, each one based on the Marx generator concept, operating as series and parallel switches, reducing the stress on the series stacked semiconductors, and also as auxiliary pulse generator in order to fulfill the target requirements. Preliminary results of a 10 kV prototype, using 1200 V insulated gate bipolar transistors and capacitors in the solid-state Marx circuits, ten stages each, with an electrical equivalent circuit of the target, are presented, demonstrating both the improved voltage stability and pulse flexibility potential wanted for this new modulator.

Projecto e implementação de um sistema de alimentação para um transformador de alta tensão

Neste trabalho pretende-se estudar, dimensionar e implementar experimentalmente de um sistema de alimentação para transformadores de alta tensão a alta frequência. Este sistema será constituído por dois elementos principais, um rectificador monofásico em ponte totalmente controlado e por um inversor de tensão. Inicialmente realizou-se um estudo sobre as diferentes topologias possíveis para o rectificador considerando diferentes tipos de carga. Realizou-se, também, um estudo sobre o circuito de geração dos impulsos de disparo dos tiristores, executado com base num circuito integrado TCA 785, dimensionou-se os elementos constituintes do circuito de disparo, e de um sistema de controlo da tensão de saída do rectificador. Posteriormente estudou-se o funcionamento do inversor de tensão, definindo-se os modos de operação e dimensionou-se um circuito ressonante tendo em conta os parâmetros construtivos do transformador que se pretende utilizar. Finalmente procedeu-se à implementação prática dos sistemas previamente dimensionados e simulados e à apresentação dos respectivos resultados.

A two terminal optical signal and image processing p-i-n/p-i-n image and colour sensor

A two terminal optically addressed image processing device based on two stacked sensing/switching p-i-n a-SiC:H diodes is presented. The charge packets are injected optically into the p-i-n sensing photodiode and confined at the illuminated regions changing locally the electrical field profile across the p-i-n switching diode. A red scanner is used for charge readout. The various design parameters and addressing architecture trade-offs are discussed. The influence on the transfer functions of an a-SiC:H sensing absorber optimized for red transmittance and blue collection or of a floating anode in between is analysed. Results show that the thin a-SiC:H sensing absorber confines the readout to the switching diode and filters the light allowing full colour detection at two appropriated voltages. When the floating anode is used the spectral response broadens, allowing B&W image recognition with improved light-to-dark sensitivity. A physical model supports the image and colour recognition process.

Surprises of the transformer as a coupled oscillator system

We study a system of two RLC oscillators coupled through a variable mutual inductance. The system is interesting because it exhibits some peculiar features of coupled oscillators: (i) there are two natural frequencies; (ii) in general, the resonant frequencies do not coincide with the natural frequencies; (iii) the resonant frequencies of both oscillators differ; (iv) for certain choices of parameters, there is only one resonant frequency, instead of the two expected.

Fotodetector e dispositivo WDM integrados

Ao longo deste trabalho é apresentada a caracterização optoelectrónica de uma estrutura semicondutora empilhada de fotodíodos PIN (Positive-Intrinsic-Negative), baseados em silício amorfo hidrogenado (a-Si:H - Hydrogenated Amorphous Silicon) e siliceto de carbono amorfo hi-drogenado (a-SiC:H - Hydrogenated Amorphous Silicon Carbide), em que ambos funcionam como filtros ópticos na zona visível do espectro electromagnético e cuja sensibilidade espectral na região do visível é modulada pelo sinal de tensão eléctrico aplicado e pela presença de polarização óptica adicional (radiação de fundo). Pretende-se utilizar a característica de sensor de cor destes dispositivos semicondutores para realizar a demultiplexagem de sinais ópticos e desenvolver um algoritmo que permita fazer o reco-nhecimento autónomo do sinal transmitido em cada canal, tendo em vista a utilização de vários ca-nais para a transmissão de sinais a curta distância. A transmissão destes sinais deverá ser suportada no meio de transmissão fibra óptica, que constituirá uma importante mais-valia na optimização do sistema WDM (Wavelength Division Mul-tiplexing), permitindo optimizar a transmissão de sinais. Pelas suas capacidades intrínsecas, as fi-bras ópticas de plástico (POF - Plastic Optical Fibers) são uma solução adequada para a transmis-são de sinais no domínio visível do espectro electromagnético a curtas distâncias. Foi realizada uma sucinta caracterização optoelectrónica da estrutura semicondutora sob diferentes condições de iluminação, variando o comprimento de onda e a iluminação de fundo que influencia a resposta espectral do dispositivo semicondutor, variando as cores dos fundos inciden-tes, variando o lado incidente do fundo sobre a estrutura semicondutora, variando a intensidade des-ses mesmos fundos incidentes e também variando a frequência do sinal de dados. Para a transmissão dos sinais de dados foram utilizados três dispositivos LED (Light-Emitting Diode) com as cores vermelho (626nm), verde (525nm) e azul (470nm) a emitir os respec-tivos sinais de dados sobre a estrutura semicondutora e onde foram aplicadas diversas configurações de radiação de fundo incidente, variando as cores dos fundos incidentes, variando o lado incidente do fundo sobre a estrutura semicondutora e variando também a intensidade desses mesmos fundos incidentes. Com base nos resultados obtidos ao longo deste trabalho, foi possível aferir sobre a influên-cia da presença da radiação de fundo aplicada ao dispositivo, usando diferentes sequências de dados transmitidos nos vários canais. Sob polarização inversa, e com a aplicação de um fundo incidente no lado frontal da estrutura semicondutora os valores de fotocorrente gerada são amplificados face aos valores no escuro, sendo que os valores mais altos foram encontrados com a aplicação do fundo de cor violeta, contribuindo para tal, o facto do sinal do canal vermelho e canal verde serem bastan-te amplificados com a aplicação deste fundo. Por outro lado, com a aplicação dos fundos incidentes no lado posterior da estrutura semi-condutora, o sinal gerado não é amplificado com nenhuma cor, no entanto, a aplicação do fundo de cor azul proporciona a distinção do sinal proveniente do canal azul e do canal vermelho, sendo que quando está presente um sinal do canal vermelho, o sinal é fortemente atenuado e com a presença do sinal do canal azul o sinal gerado aproxima-se mais do valor de fotocorrente gerada com a estru-tura no escuro. O algoritmo implementado ao longo deste trabalho, permite efectuar o reconhecimento au-tónomo da informação transmitida por cada canal através da leitura do sinal da fotocorrente forne-cida pelo dispositivo quando sujeito a uma radiação de fundo incidente violeta no lado frontal e uma radiação de fundo incidente azul no lado posterior. Este algoritmo para a descodificação dos sinais WDM utiliza uma aplicação gráfica desenvolvida em Matlab que com base em cálculos e compara-ções de sinal permite determinar a sequência de sinal dos três canais ópticos incidentes. O trabalho proposto nesta tese é um módulo que se enquadra no desenvolvimento de um sistema integrado de comunicação óptica a curta distância, que tem sido alvo de estudo e que resulta das conclusões de trabalhos anteriores, em que este dispositivo e outros de configuração idêntica foram analisados, de forma a explorar a sua utilização na implementação da tecnologia WDM den-tro do domínio do espectro visível e utilizando as POF como meio de transmissão.

Fast optimum-predictive control and capacitor voltage balancing strategy for bipolar back-to-back NPC converters in high-voltage direct current transmission systems

Multilevel power converters have been introduced as the solution for high-power high-voltage switching applications where they have well-known advantages. Recently, full back-to-back connected multilevel neutral point diode clamped converters (NPC converter) have been used inhigh-voltage direct current (HVDC) transmission systems. Bipolar-connected back-to-back NPC converters have advantages in long-distance HVDCtransmission systems over the full back-to-back connection, but greater difficulty to balance the dc capacitor voltage divider on both sending and receiving end NPC converters. This study shows that power flow control and dc capacitor voltage balancing are feasible using fast optimum-predictive-based controllers in HVDC systems using bipolar back-to-back-connected five-level NPC multilevel converters. For both converter sides, the control strategytakes in account active and reactive power, which establishes ac grid currents in both ends, and guarantees the balancing of dc bus capacitor voltages inboth NPC converters. Additionally, the semiconductor switching frequency is minimised to reduce switching losses. The performance and robustness of the new fast predictive control strategy, and its capability to solve the DC capacitor voltage balancing problem of bipolar-connected back-to-back NPCconverters are evaluated.

Measurement of Photo Capacitance in Amorphous Silicon Photodiodes

This paper discusses the photodiode capacitance dependence on imposed light and applied voltage using different devices. The first device is a double amorphous silicon pin-pin photodiode; the second one a crystalline pin diode and the last one a single pin amorphous silicon diode. Double amorphous silicon diodes can be used as (de)multiplexer devices for optical communications. For short range applications, using plastic optical fibres, the WDM (wavelength-division multiplexing) technique can be used in the visible light range to encode multiple signals. Experimental results consist on measurements of the photodiode capacitance under different conditions of imposed light and applied voltage. The relation between the capacitive effects of the double diode and the quality of the semiconductor internal junction will be analysed. The dynamics of charge accumulations will be measured when the photodiode is illuminated by a pulsed monochromatic light.

Modelling a Rotating Shaft as an Elastically Restrained Bernoulli-Euler Beam

Industrial rotating machines may be exposed to severe dynamic excitations due to resonant working regimes. Dealing with the bending vibration, problem of a machine rotor, the shaft - and attached discs - can be simply modelled using the Bernoulli-Euler beam theory, as a continuous beam subjected to a specific set of boundary conditions. In this study, the authors recall Rayleigh's method to propose an iterative strategy, which allows for the determination of natural frequencies and mode shapes of continuous beams taking into account the effect of attached concentrated masses and rotational inertias, including different stiffness coefficients at the right and the left end sides. The algorithm starts with the exact solutions from Bernoulli-Euler's beam theory, which are then updated through Rayleigh's quotient parameters. Several loading cases are examined in comparison with the experimental data and examples are presented to illustrate the validity of the model and the accuracy of the obtained values.

Driving Scheme Using MIS Photosensor for Luminance Control of AMOLED Pixel

This paper presents a new driving scheme utilizing an in-pixel metal-insulator-semiconductor (MIS) photosensor for luminance control of active-matrix organic light-emitting diode (AMOLED) pixel. The proposed 3-TFT circuit is controlled by an external driver performing the signal readout, processing, and programming operations according to a luminance adjusting algorithm. To maintain the fabrication simplicity, the embedded MIS photosensor shares the same layer stack with pixel TFTs. Performance characteristics of the MIS structure with a nc-Si : H/a-Si : H bilayer absorber were measured and analyzed to prove the concept. The observed transient dark current is associated with charge trapping at the insulator-semiconductor interface that can be largely eliminated by adjusting the bias voltage during the refresh cycle. Other factors limiting the dynamic range and external quantum efficiency are also determined and verified using a small-signal model of the device. Experimental results demonstrate the feasibility of the MIS photosensor for the discussed driving scheme.

Capacitive effects in pinpin photodiodes

The application of a-SiC:H/a-Si:H pinpin photodiodes for optoelectronic applications as a WDM demultiplexer device has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. This is required in short range optical communication applications, where for costs reasons the link is provided by Plastic Optical Fibers. Characterization of these devices has shown the presence of large photocapacitive effects. By superimposing background illumination to the pulsed channel the device behaves as a filter, producing signal attenuation, or as an amplifier, producing signal gain, depending on the channel/background wavelength combination. We present here results, obtained by numerical simulations, about the internal electric configuration of a-SiC:H/a-Si:H pinpin photodiode. These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photo-capacitance due to the accumulation of space charge localized at the bottom diode that, according to the Shockley-Read-Hall model, it is mainly due to defect trapping. Experimental result about measurement of the photodiode capacitance under different conditions of illumination and applied bias will be also presented. The combination of these analyses permits the description of a wavelength controlled photo-capacitance that combined with the series and parallel resistance of the diodes may result in the explicit definition of cut off frequencies for frequency capacitive filters activated by the light background or an oscillatory resonance of photogenerated carriers between the two diodes. (C) 2013 Elsevier B.V. All rights reserved.

Optoelectronic properties of a-Si(1-x)C(x)H films grown in hydrogen diluted silane-methane plasma

This work reports on the optoelectronic properties and device application of hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films grown by plasma-enhanced chemical vapour deposition (PECVD). The films with an optical bandgap ranging from about 1.8 to 2.0 eV were deposited in hydrogen diluted silane-methane plasma by varying the radio frequency power. Several n-i-p structures with an intrinsic a-Si(1-x)C(x):H layer of different optical gaps were also fabricated. The optimized devices exhibited a diode ideality factor of 1.4-1.8, and a leakage current of 190-470 pA/cm(2) at -5 V. The density of deep defect states in a-Si(1-x)C(x):H was estimated from the transient dark current measurements and correlated with the optical bandgap and carbon content. Urbach energies for the valence band tail were also determined by analyzing the spectral response within sub-bandgap energy range. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Avaliação de qualidade de energia de um sistema fotovoltaico numa rede elétrica

Dissertação para obtenção do grau de Mestre em Engenharia Electrotécnica Ramo de Energia

Transformador para fonte de alta-tensão contínua

Dissertação para a obtenção do grau de Mestre em Engenharia Electrotécnica Ramo de Automação e Electrónica Industrial