Photo-induced instability of nanocrystalline silicon TFTs

We examine the instability behavior of nanocrystalline silicon (nc-Si) thin-film transistors (TFTs) in the presence of electrical and optical stress. The change in threshold voltage and sub-threshold slope is more significant under combined bias-and-light stress when compared to bias stress alone. The threshold voltage shift (Delta V-T) after 6 h of bias stress is about 7 times larger in the case with illumination than in the dark. Under bias stress alone, the primary instability mechanism is charge trapping at the semiconductor/insulator interface. In contrast, under combined bias-and-light stress, the prevailing mechanism appears to be the creation of defect states in the channel, and believed to take place in the amorphous phase, where the increase in the electron density induced by electrical bias enhances the non-radiative recombination of photo-excited electron-hole pairs. The results reported here are consistent with observations of photo-induced efficiency degradation in solar cells.

Stacked photo-sensing devices based on SiC alloys A non-pixelled architecture for imagers and demultiplexing devices

In this review paper different designs based on stacked p-i'-n-p-i-n heterojunctions are presented and compared with the single p-i-n sensing structures. The imagers utilise self-field induced depletion layers for light detection and a modulated laser beam for sequential readout. The effect of the sensing element structure, cell configurations (single or tandem), and light source properties (intensity and wavelength) are correlated with the sensor output characteristics (light-to-dark sensivity, spatial resolution, linearity and S/N ratio). The readout frequency is optimized showing that scans speeds up to 104 lines per second can be achieved without degradation in the resolution. Multilayered p-i'-n-p-i-n heterostructures can also be used as wavelength-division multiplexing /demultiplexing devices in the visible range. Here the sensor element faces the modulated light from different input colour channels, each one with a specific wavelength and bit rate. By reading out the photocurrent at appropriated applied bias, the information is multiplexed or demultiplexed and can be transmitted or recovered again. Electrical models are present to support the sensing methodologies.

Measurement of Photo Capacitance in Amorphous Silicon Photodiodes

This paper discusses the photodiode capacitance dependence on imposed light and applied voltage using different devices. The first device is a double amorphous silicon pin-pin photodiode; the second one a crystalline pin diode and the last one a single pin amorphous silicon diode. Double amorphous silicon diodes can be used as (de)multiplexer devices for optical communications. For short range applications, using plastic optical fibres, the WDM (wavelength-division multiplexing) technique can be used in the visible light range to encode multiple signals. Experimental results consist on measurements of the photodiode capacitance under different conditions of imposed light and applied voltage. The relation between the capacitive effects of the double diode and the quality of the semiconductor internal junction will be analysed. The dynamics of charge accumulations will be measured when the photodiode is illuminated by a pulsed monochromatic light.

World press photo 2012: a construção discursiva da Primavera Árabe

Dissertação apresentada à Escola Superior de Comunicação Social como parte dos requisitos para obtenção de grau de mestre em Jornalismo.

Novos compostos orgânicos reticuláveis para aplicações em células fotovoltaicas

Trabalho Final de Mestrado para obtenção do grau de mestre em Engenharia Química e Biológica

PV system modeling by five parameters and in situ test

This paper focuses on a novel formalization for assessing the five parameter modeling of a photovoltaic cell. An optimization procedure is used as a feasibility problem to find the parameters tuned at the open circuit, maximum power, and short circuit points in order to assess the data needed for plotting the I-V curve. A comparison with experimental results is presented for two monocrystalline PV modules.

PV system modeling by five parameters and in Situ test

This paper focuses on a novel formalization for assessing the five parameter modeling of a photovoltaic cell. An optimization procedure is used as a feasibility problem to find the parameters tuned at the open circuit, maximum power, and short circuit points in order to assess the data needed for plotting the I-V curve. A comparison with experimental results is presented for two monocrystalline PV modules.

A PV panel simulator based on a two quadrant DC/DC power converter with a sliding mode controller

The use of a solar photovoltaic (PV) panel simulator can be a valued tool for the design and evaluation of the several components of a photovoltaic system. This simulator is based on power electronic converter controlled in such a way that will behave as a PV panel. Thus, in this paper a PV panel simulator based on a two quadrant DC/DC power converter is proposed. This topology will allow to achieve fast responses, like suddenly changes in the irradiation and temperature. To control the power converter it will be used a fast and robust sliding mode controller. Therefore, with the proposed system I-V curve simulation of a PV panel is obtained. Experimental results from a laboratory prototype are presented in order to confirm the theoretical operation.

Simulation of a-Si PV system grid connected by boost and inverter

This paper is about a PV system connected to the electric grid by power electronic converters, using classical PI controller. The modelling for the converters emulates the association of a DC-DC boost with a two-level power inverter (TwLI) or three-level power inverter (ThLI) in order to follow the performance of a testing experimental system. Pulse width modulation (PWMo) by sliding mode control (SMCo) associated with space vector modulation (SVMo) is applied to the boost and the inverter. The PV system is described by the five parameters equivalent circuit. Parameter identification and simulation studies are performed for comparison with the testing experimental system.

PV systems linked to the grid: parameter identification with a heuristic procedure

This paper focuses on a PV system linked to the electric grid by power electronic converters, identification of the five parameters modeling for photovoltaic systems and the assessment of the shading effect. Normally, the technical information for photovoltaic panels is too restricted to identify the five parameters. An undemanding heuristic method is used to find the five parameters for photovoltaic systems, requiring only the open circuit, maximum power, and short circuit data. The I- V and the P- V curves for a monocrystalline, polycrystalline and amorphous photovoltaic systems are computed from the parameters identification and validated by comparison with experimental ones. Also, the I- V and the P- V curves under the effect of partial shading are obtained from those parameters. The modeling for the converters emulates the association of a DC-DC boost with a two-level power inverter in order to follow the performance of a testing commercial inverter employed on an experimental system. © 2015 Elsevier Ltd.

Simulation of a-Si PV system linked to the grid by DC boost and three-level inverter under cloud scope

This paper is about a PV system linked to the electric grid through power converters under cloud scope. The PV system is modeled by the five parameters equivalent circuit and a MPPT procedure is integrated into the modeling. The modeling for the converters models the association of a DC-DC boost with a three-level inverter. PI controllers are used with PWM by sliding mode control associated with space vector modulation controlling the booster and the inverter. A case study addresses a simulation to assess the performance of a PV system linked to the electric grid. Conclusions regarding the integration of the PV system into the electric grid are presented. © IFIP International Federation for Information Processing 2015.