Wavelength Selective a-SiC:H p-i-n/p-i-n Heterostructure for Fluorescent Proteins Detection

In this paper we present results on the optimization of multilayered a-SiC:H heterostructures that can be used as optical transducers for fluorescent proteins detection using the Fluorescence Resonance Energy Transfer approach. Double structures composed by pin based aSiC:H cells are analyzed. The color discrimination is achieved by ac photocurrent measurement under different externally applied bias. Experimental data on spectral response analysis, current-voltage characteristics and color and transmission rate discrimination are reported. An electrical model, supported by a numerical simulation gives insight into the device operation. Results show that the optimized a-SiC:H heterostructures act as voltage controlled optical filters in the visible spectrum. When the applied voltages are chosen appropriately those optical transducers can detect not only the selective excitation of specimen fluorophores, but also the subsequent weak acceptor fluorescent channel emission.

Sistema de gestão de segurança para a prevenção de acidentes graves (SGSPAG): manual de implementação para o sector químico: volume I

A evolução dos acidentes graves envolvendo substâncias perigosas ocorridos no Sector Químico, não deixa dúvidas de que as características intrínsecas da própria actividade industrial podem estimular a ocorrência dos acidentes graves, proporcionando sérias consequências à Comunidade envolvente, à própria Propriedade e ao meio ambiente, cujas responsabilidades estão inseridas na Gestão Empresarial. Desta forma torna-se fundamental o desenvolvimento e implementação de um Sistema de Gestão de Segurança para a Prevenção de Acidentes Graves num Estabelecimento de Nível Superior de Perigosidade. O objectivo global deste trabalho, baseia-se no estabelecimento de um Quadro Metodológico de aplicação do Regime de Prevenção de Acidentes Graves ao Sector Químico, suportado num Sistema de Gestão de Segurança para a Prevenção de Acidentes Graves (SGSPAG) e no respectivo Manual de Implementação. Para tal foi realizado um enquadramento teórico, técnico-científico, e legal da prevenção de acidentes graves que envolvam substâncias perigosas, a concepção de um SGSPAG e elaboração do Manual de Implementação e a aplicação a um Caso de Estudo Industrial do SGSPAG com a correspondente análise crítica. O contexto específico foi o da Refinaria de Sines - Instalação de Dessulfuração de Gasóleo. A pesquisa foi acompanhada por um conjunto de métodos que permitiram uma visão mais actual do assunto no contexto seleccionado (dados adquiridos através de referências bibliográficas, da observação in-loco de auditorias de SGSPAG, da consulta de documentação relativa a auditorias SGSPAG e do estudo da legislação vigente e passada). Os resultados obtidos no Caso de Estudo Industrial, demonstraram que uma visão mais integradora e global podem contribuir para um melhor entendimento dos acidentes graves envolvendo substâncias perigosas e a sua prevenção, possibilitando um envolvimento maior e o comprometimento efectivo de todos, sejam eles trabalhadores (internos ou serviços subcontratados), Chefes de Secção, Responsáveis de Área, fornecedores, profissionais de outras áreas, Direcção da Empresa, representantes sindicais ou governamentais ou a própria Comunidade envolvente, estando o SGSPAG da Refinaria de Sines globalmente concebido, implementado e a demonstrar aptidão para, de uma forma consistente, cumprir os requisitos aplicáveis no DL nº 254/2007 e atingir os objectivos da Politica de Prevenção de Acidentes Graves.

Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes

We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 degrees C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p(+) nc-Si:H as a window layer, complete p-i-n structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers.

A 3-phase model for VIS/NIR mu C-Si : H p-i-n detectors

The spectral response and the photocurrent delivered by entirely microcrystalline p-i-n-Si:H detectors an analysed under different applied bias and light illumination conditions. The spectral response and the internal collection depend not only on the energy range but also on the illumination side. Under [p]- and [n]-side irradiation, the internal collection characteristics have an atypical shape. It is high for applied bias and lower than the open circuit voltage, shows a steep decrease near the open circuit voltage (higher under [n]-side illumination) and levels off for higher voltages. Additionally, the numerical modeling of the VIS/NIR detector, based on the band discontinuities near the grain boundaries and interfaces, complements the study and gives insight into the internal physical process.

A two terminal optical signal and image processing p-i-n/p-i-n image and colour sensor

A two terminal optically addressed image processing device based on two stacked sensing/switching p-i-n a-SiC:H diodes is presented. The charge packets are injected optically into the p-i-n sensing photodiode and confined at the illuminated regions changing locally the electrical field profile across the p-i-n switching diode. A red scanner is used for charge readout. The various design parameters and addressing architecture trade-offs are discussed. The influence on the transfer functions of an a-SiC:H sensing absorber optimized for red transmittance and blue collection or of a floating anode in between is analysed. Results show that the thin a-SiC:H sensing absorber confines the readout to the switching diode and filters the light allowing full colour detection at two appropriated voltages. When the floating anode is used the spectral response broadens, allowing B&W image recognition with improved light-to-dark sensitivity. A physical model supports the image and colour recognition process.

Bias dependent photocurrent collection in p-i-n a-Si : EVSiC : H heterojunction

A series of large area single layers and heterojunction cells in the assembly glass/ZnO:Al/p (SixC1-x:H)/i (Si:H)/n (SixC1-x:H)/Al (0 ion properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage and capacitance-voltage characteristics. For the heterojunction cells S-shaped J-V characteristics under different illumination conditions are observed leading to poor fill factors. High serial resistances around 10(5)Ohm are also measured Simulated results confirm the experimental findings suggesting that the transport in dark depends almost exclusively on field-aided drift while under illumination it is dependent mainly on minority carriers the diffusion.

Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunction

A series of large area single layers and glass/ZnO:AVp(SixC1-x:H)/i(Si:H)/n(SixC1-x:H)/AI (0 < x < 1) heterojunction cells were produced by plasma-enhanced chemical vapour deposition (PE-CVD) at low temperature. Junction properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage (J-V) and capacitance-voltage (C-V) characteristics. For the heterojunction cells atypical J-V characteristics under different illumination conditions are observed leading to poor fill factors. High series resistances around 106 Q are also measured. These experimental results were used as a basis for the numerical simulation of the energy band diagram, and the electrical field distribution of the structures. Further comparison with the sensor performance gave satisfactory agreement. Results show that the conduction band offset is the most limiting parameter for the optimal collection of the photogenerated carriers. As the optical gap increases and the conductivity of the doped layers decreases, the transport mechanism changes from a drift to a diffusion-limited process.

Colour filtering in a-SiC : H based p-i-n-p-i-n cells: A trade-off between bias polarity and absorption regions

A large area colour imager optically addressed is presented. The colour imager consists of a thin wide band gap p-i-n a-SiC:H filtering element deposited on the top of a thick large area a-SiC:H(-p)/a-Si:H(-i)/a-SiC:H(-n) image sensor, which reveals itself an intrinsic colour filter. In order to tune the external applied voltage for full colour discrimination the photocurrent generated by a modulated red light is measured under different optical and electrical bias. Results reveal that the integrated device behaves itself as an imager and a filter giving information not only on the position where the optical image is absorbed but also on it wavelength and intensity. The amplitude and sign of the image signals are electrically tuneable. In a wide range of incident fluxes and under reverse bias, the red and blue image signals are opposite in sign and the green signal is suppressed allowing blue and red colour recognition. The green information is obtained under forward bias, where the blue signal goes down to zero and the red and green remain constant. Combining the information obtained at this two applied voltages a RGB colour image picture can be acquired without the need of the usual colour filters or pixel architecture. A numerical simulation supports the colour filter analysis.

Image and color recognition using amorphous silicon p-i-n photodiodes

Large area hydrogenated amorphous silicon single and stacked p-i-n structures with low conductivity doped layers are proposed as monochrome and color image sensors. The layers of the structures are based on amorphous silicon alloys (a-Si(x)C(1-x):H). The current-voltage characteristics and the spectral sensitivity under different bias conditions are analyzed. The output characteristics are evaluated under different read-out voltages and scanner wavelengths. To extract information on image shape, intensity and color, a modulated light beam scans the sensor active area at three appropriate bias voltages and the photoresponse in each scanning position ("sub-pixel") is recorded. The investigation of the sensor output under different scanner wavelengths and varying electrical bias reveals that the response can be tuned, thus enabling color separation. The operation of the sensor is exemplified and supported by a numerical simulation.

New p-i-n Si : H imager configuration for spatial resolution improvement

Amorphous glass/ZnO-Al/p(a-Si:H)/i(a-Si:H)/n(a-Si1-xCx:H)/Al imagers with different n-layer resistivities were produced by plasma enhanced chemical vapour deposition technique (PE-CVD). An image is projected onto the sensing element and leads to spatially confined depletion regions that can be readout by scanning the photodiode with a low-power modulated laser beam. The essence of the scheme is the analog readout, and the absence of semiconductor arrays or electrode potential manipulations to transfer the information coming from the transducer. The influence of the intensity of the optical image projected onto the sensor surface is correlated with the sensor output characteristics (sensitivity, linearity blooming, resolution and signal-to-noise ratio) are analysed for different material compositions (0.5 < x < 1). The results show that the responsivity and the spatial resolution are limited by the conductivity of the doped layers. An enhancement of one order of magnitude in the image intensity signal and on the spatial resolution are achieved at 0.2 mW cm(-2) light flux by decreasing the n-layer conductivity by the same amount. A physical model supported by electrical simulation gives insight into the image-sensing technique used.

Tuning the spectral distribution of p-i-n a-SiC : H devices for colour detection

ZnO:Al/p (SiC:H)/i (Si:H)/n (SiC:H) large area image and colour sensor are analysed. Carrier transport and collection efficiency are investigated from dark and illuminated current-voltage (I-V) dependence and spectral response measurements under different optical and electrical bias conditions. Results show that the carrier collection depends on the optical bias and on the applied voltage. By changing the electrical bias around the open circuit voltage it is possible to filter the absorption at a given wavelength and so to tune the spectral sensitivity of the device. Transport and optical modelling give insight into the internal physical process and explain the bias control of the spectral response and the image and colour sensing properties of the devices.

Parte I: montagem do túnel pré-fabricado (Arco Techspan), localizado na variante do Cávado - Dolce Vita Braga: parte II: reabilitação e reparação das pontes sobre o rio Criz I e Criz II na E.N. 234

O presente relatório visa apresentar o trabalho desenvolvido pelo estagiário, na empresa Freyssinet -Terra Armada, SA. Este encontra-se dividido em 2 partes distintas. A primeira no âmbito da actividade Terra Armada, consistiu no acompanhamento da montagem do túnel pré-fabricado que estabelece a ligação entre a Rua C junto ao Centro Comercial Dolce Vita em Braga e a Variante do Cávado. A segunda no âmbito da actividade Freyssinet, consistiu no acompanhamento da obra de reabilitação e reforço estrutural de duas pontes denominadas de Criz I e Criz II, ambas localizadas na E.N.234 junto a Santa Comba Dão. A intensa ocupação dos terrenos em meio urbano leva cada vez mais ao estudo de novas soluções que permitem melhorar a circulação de pessoas e bens. Para restabelecer a ligação entre a Rua C e a Variante do Cávado a solução encontrada passou pela construção de um Túnel a céu aberto. Esta foi a melhor solução encontrada pois está prevista a intersecção de três vias denominadas de Variante do Cávado, Rua B e Rua D, todas relacionadas com os restabelecimentos de acesso ao empreendimento Dolce Vita Braga. Sobre as pontes de Criz I e Criz II recordamos que as mesmas foram projectadas em 1975 pelo Prof. Edgar Cardoso, tendo sido construídas no período que decorreu entre 1976 e 1979. Apesar de serem pontes recentes, estas apresentavam um avançado estado de deterioração o que levou à elaboração de um projecto específico de reparação e reforço estrutural e consequente intervenção, tendo sido adjudicadas à Freyssinet as intervenções concernentes ao reforço com Pré-Esforço, substituição de aparelhos de apoio e juntas de dilatação. O que mais adiante se detalhará no presente relatório será a explicação e descrição dos trabalhos executados em ambas as obras, onde foram aplicadas a tecnologia Terra Armada no primeiro caso e a tecnologia Freyssinet para o segundo caso.

A falha como motor de criação: ensaio sobre A.I.M. (ensaio longo que enquadra e justifica o objecto performativo A.I.M.)

Este projecto basear-se-á na descrição da exploração do universo da falha como um motor de criação. Para tal, foi tomado como ponto de partida as dificuldades inerentes à dislexia. Será também descrito de forma pormenorizada o tempo passado juntamente com a companhia Les Ballets C . de la B. Incluirá igualmente um diário de bordo com a descrição detalhada do projecto A.I.M.

Synthesis, Antimicrobial and Antiproliferative Activity of Novel Silver(I) Tris(pyrazolyl)methanesulfonateand 1,3,5-Triaza-7-phosphadamantane Complexes

Five new silver(I) complexes of formulas [Ag(Tpms)] (1), [Ag(Tpms)-(PPh3)] (2), [Ag(Tpms)(PCy3)] (3), [Ag(PTA)][BF4] (4), and [Ag(Tpms)(PTA)] (5) {Tpms = tris(pyrazol-1-yl)methanesulfonate, PPh3 = triphenylphosphane, PCy3 = tricyclohexylphosphane, PTA = 1,3,5-triaza-7-phosphaadamantane) have been synthesized and fully characterized by elemental analyses, H-1, C-13, and P-31 NMR, electrospray ionization mass spectrometry (ESI-MS), and IR spectroscopic techniques. The single crystal X-ray diffraction study of 3 shows the Tpms ligand acting in the N-3-facially coordinating mode, while in 2 and 5 a N2O-coordination is found, with the SO3 group bonded to silver and a pendant free pyrazolyl ring. Features of the tilting in the coordinated pyrazolyl rings in these cases suggest that this inequivalence is related with the cone angles of the phosphanes. A detailed study of antimycobacterial and antiproliferative properties of all compounds has been carried out. They were screened for their in vitro antimicrobial activities against the standard strains Enterococcus faecalis (ATCC 29922), Staphylococcus aureus (ATCC 25923), Streptococcus pneumoniae (ATCC 49619), Streptococcus pyogenes (SF37), Streptococcus sanguinis (SK36), Streptococcus mutans (UA1S9), Escherichia coli (ATCC 25922), and the fungus Candida albicans (ATCC 24443). Complexes 1-5 have been found to display effective antimicrobial activity against the series of bacteria and fungi, and some of them are potential candidates for antiseptic or disinfectant drugs. Interaction of Ag complexes with deoxyribonucleic acid (DNA) has been studied by fluorescence spectroscopic techniques, using ethidium bromide (EB) as a fluorescence probe of DNA. The decrease in the fluorescence of DNA EB system on addition of Ag complexes shows that the fluorescence quenching of DNA EB complex occurs and compound 3 is particularly active. Complexes 1-5 exhibit pronounced antiproliferative activity against human malignant melanoma (A375) with an activity often higher than that of AgNO3, which has been used as a control, following the same order of activity inhibition on DNA, i.e., 3 > 2 > 1 > 5 > AgNO3 >> 4.

A heráldica e a emblemática da Guarda Nacional Republicana I

RESUMO: Ensaia-se o estudo da evolução da heráldica e emblemática da Guarda Nacional Republicana. Trata-se da primeira tentativa de abordagem da matéria em apreço, privilegiando-se e análise em termos artísticos, ou seja a experimentação estética das armas.