Colour filtering in a-SiC : H based p-i-n-p-i-n cells: A trade-off between bias polarity and absorption regions

A large area colour imager optically addressed is presented. The colour imager consists of a thin wide band gap p-i-n a-SiC:H filtering element deposited on the top of a thick large area a-SiC:H(-p)/a-Si:H(-i)/a-SiC:H(-n) image sensor, which reveals itself an intrinsic colour filter. In order to tune the external applied voltage for full colour discrimination the photocurrent generated by a modulated red light is measured under different optical and electrical bias. Results reveal that the integrated device behaves itself as an imager and a filter giving information not only on the position where the optical image is absorbed but also on it wavelength and intensity. The amplitude and sign of the image signals are electrically tuneable. In a wide range of incident fluxes and under reverse bias, the red and blue image signals are opposite in sign and the green signal is suppressed allowing blue and red colour recognition. The green information is obtained under forward bias, where the blue signal goes down to zero and the red and green remain constant. Combining the information obtained at this two applied voltages a RGB colour image picture can be acquired without the need of the usual colour filters or pixel architecture. A numerical simulation supports the colour filter analysis.

Image and color recognition using amorphous silicon p-i-n photodiodes

Large area hydrogenated amorphous silicon single and stacked p-i-n structures with low conductivity doped layers are proposed as monochrome and color image sensors. The layers of the structures are based on amorphous silicon alloys (a-Si(x)C(1-x):H). The current-voltage characteristics and the spectral sensitivity under different bias conditions are analyzed. The output characteristics are evaluated under different read-out voltages and scanner wavelengths. To extract information on image shape, intensity and color, a modulated light beam scans the sensor active area at three appropriate bias voltages and the photoresponse in each scanning position ("sub-pixel") is recorded. The investigation of the sensor output under different scanner wavelengths and varying electrical bias reveals that the response can be tuned, thus enabling color separation. The operation of the sensor is exemplified and supported by a numerical simulation.

ITO/SiOx/Si optical sensor with internal gain

A visible/near-infrared optical sensor based on an ITO/SiOx/n-Si structure with internal gain is presented. This surface-barrier structure was fabricated by a low-temperature processing technique. The interface properties and carder transport were investigated from dark current-voltage and capacitance-voltage characteristics. Examination of the multiplication properties was performed under different light excitation and reverse bias conditions. The spectral and pulse response characteristics are analysed. The current amplification mechanism is interpreted by the control of electron current by the space charge of photogenerated holes near the SiOx/Si interface. The optical sensor output characteristics and some possible device applications are presented.

New stacked photodevices for signal multiplexing and demultiplexing applications in the visible spectrum

Results on the use of a double a-SiC:H p-i-n heterostructure for signal multiplexing and demultiplexing applications in the visible range are presented. Pulsed monochromatic beams together (multiplexing mode), or a single polychromatic beam (demultiplexing mode) impinge on the device and are absorbed, accordingly to their wavelength. Red, green and blue pulsed input channels are transmitted together, each one with a specific transmission rate. The combined optical signal is analyzed by reading out, under different applied voltages, the generated photocurrent. Results show that in the multiplexing mode the output signal is balanced by the wavelength and transmission rate of each input channel, keeping the memory of the incoming optical carriers. In the demultiplexing mode the photocurrent is controlled by the applied voltage allowing regaining the transmitted information. A physical model supported by a numerical simulation gives insight into the device operation.

Optical confinement and colour separation in a double colour laser scanned photodiode (D/CLSP)

Large area n-i-p-n-i-p a-SiC:H heterostructures are used as sensing element in a double colour laser scanned photodiode image sensor (D/CLSP). This work aims to clarify possible improvements, physical limits and performance of CLSP image sensor when used as non-pixel image reader. Here, the image capture device and the scanning reader are optimized and the effects of the sensor structure on the output characteristics discussed. The role of the design of the sensing element, the doped layer composition and thickness, the read-out parameters (applied voltage and scanner frequency) on the image acquisition and the colour detection process are analysed. A physical model is presented and supported by a numerical simulation of the output characteristics of the sensor.

Optical confinement and colour separation in a double colour laser scanned photodiode (D/CLSP)

Large area n-i-p-n-i-p a-SiC:H heterostructures are used as sensing element in a Double Color Laser Scanned Photodiode image sensor (D/CLSP). This work aims to clarify possible improvements, physical limits and performance of CLSP image sensor when used as non-pixel image reader. Here, the image capture device and the scanning reader are optimized and the effects of the sensor structure on the output characteristics discussed. The role of the design of the sensing element, the doped layer composition and thickness, the read-out parameters (applied voltage and scanner frequency) on the image acquisition and the color detection process are analyzed. A physical model is presented and supported by a numerical simulation of the output characteristics of the sensor.

Optical demultiplexer device operating in the visible spectrum

In this paper, we present results on the use of multilayered a-SiC:H heterostructures as a device for wavelength-division demultiplexing of optical signals. These devices are useful in optical communications applications that use the wavelength division multiplexing technique to encode multiple signals into the same transmission medium. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photo generated carriers. Band gap engineering was used to adjust the photogeneration and recombination rate profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. A demux algorithm based on the voltage controlled sensitivity of the device was proposed and tested. An electrical model of the WDM device is presented and supported by the solution of the respective circuit equations.

Stacked pin Devices for Imaging Applications

In this paper we present results on the optimization of device architectures for colour and imaging applications, using a device with a TCO/pinpi'n/TCO configuration. The effect of the applied voltage on the color selectivity is discussed. Results show that the spectral response curves demonstrate rather good separation between the red, green and blue basic colors. Combining the information obtained under positive and negative applied bias a colour image is acquired without colour filters or pixel architecture. A low level image processing algorithm is used for the colour image reconstruction.

Tuning the spectral distribution of p-i-n a-SiC : H devices for colour detection

ZnO:Al/p (SiC:H)/i (Si:H)/n (SiC:H) large area image and colour sensor are analysed. Carrier transport and collection efficiency are investigated from dark and illuminated current-voltage (I-V) dependence and spectral response measurements under different optical and electrical bias conditions. Results show that the carrier collection depends on the optical bias and on the applied voltage. By changing the electrical bias around the open circuit voltage it is possible to filter the absorption at a given wavelength and so to tune the spectral sensitivity of the device. Transport and optical modelling give insight into the internal physical process and explain the bias control of the spectral response and the image and colour sensing properties of the devices.

Power Electronics Didactic Modules for Direct Current Machine Control

Several didactic modules for an electric machinery laboratory are presented. The modules are dedicated for DC machinery control and get their characteristic curves. The didactic modules have a front panel with power and signal connectors and can be configurable for any DC motor type. The three-phase bridge inverter proposed is one of the most popular topologies and is commercially available in power package modules. The control techniques and power drives were designed to satisfy static and dynamic performance of DC machines. Each power section is internally self-protected against misconnections and short-circuits. Isolated output signals of current and voltage measurements are also provided, adding versatility for use either in didactic or research applications. The implementation of such modules allowed experimental confirmation of the expected performance.

Projecto de um regulador linear de tensão: LDO

Os reguladores de tensão LDO são utilizados intensivamente na actual indústria de electrónica, são uma parte essencial de um bloco de gestão de potência para um SoC. O aumento de produtos portáteis alimentados por baterias levou ao crescimento de soluções totalmente integradas, o que degrada o rendimento dos blocos analógicos que o constituem face às perturbações introduzidas na alimentação. Desta forma, surge a necessidade de procurar soluções cada vez mais optimizadas, impondo assim novas soluções, e/ou melhoramentos dos circuitos de gestão de potência, tendo como objectivo final o aumento do desempenho e da autonomia dos dispositivos electrónicos. Normalmente este tipo de reguladores tem a corrente de saída limitada, devido a problemas de estabilidade associados. Numa tentativa de evitar a instabilidade para as correntes de carga definidas e aumentar o PSRR do mesmo, é apresentado um método de implementação que tem como objectivo melhorar estas características, em que se pretende aumentar o rendimento e melhorar a resposta à variação da carga. No entanto, a técnica apresentada utiliza polarização adaptativa do estágio de potência, o que implica um aumento da corrente de consumo. O regulador LDO foi implementado na tecnologia CMOS UMC 0.18μm e ocupa uma área inferior a 0,2mm2. Os resultados da simulação mostram que o mesmo suporta uma transição de corrente 10μA para 100mA, com uma queda de tensão entre a tensão de alimentação e a tensão de saída inferior a 200mV. A estabilidade é assegurada para todas as correntes de carga. O tempo de estabelecimento é inferior a 6μs e as variações da tensão de saída relativamente a seu valor nominal são inferiores a 5mV. A corrente de consumo varia entre os 140μA até 200μA, o que permite atingir as especificações proposta para um PSRR de 40dB@10kHz.

Perspectives on the electrically induced properties of electrospun cellulose/liquid crystal devices

A mat of electrospun cellulose fibers are deposed on transparent conductive oxide covered glass, and two such plates enclose a nematic liquid crystal. Thus two new types of Cellulose based Polymer Dispersed Liquid Crystal devices, based on hydroxypropylcellulose and Cellulose Acetate and the nematic liquid crystal E7 have been obtained. The current-voltage characteristics indicates ionic type conduction. Heating-cooling cycles have been applied on the samples and the activation energies have been determined. Simultaneously with the thermo-stimulated currents, the optical transmission dependence on the d.c. electric field and temperature was registered. ON-OFF switching times have been determined for different control voltages. (C) 2011 Elsevier B.V. All rights reserved.

Grid Integration of Offshore Wind Farms Using Modular Marx Multilevel Converters

This paper proposes the use of a Modular Marx Multilevel Converter, as a solution for energy integration between an offshore Wind Farm and the power grid network. The Marx modular multilevel converter is based on the Marx generator, and solves two typical problems in this type of multilevel topologies: modularity and dc capacitor voltage balancing. This paper details the strategy for dc capacitor voltage equalization. The dynamic models of the converter and power grid are presented in order to design the converter ac output voltages and the dc capacitor voltage controller. The average current control is presented and used for power flow control, harmonics and reactive power compensation. Simulation results are presented in order to show the effectiveness of the proposed (MC)-C-3 topology.

Modelling of n-stage Blumlein stacked lines for bipolar pulse generation

A Blumlein line is a particular Pulse Forming Line, PFL, configuration that allows the generation of high-voltage sub-microsecond square pulses, with the same voltage amplitude as the dc charging voltage, into a matching load. By stacking n Blumlein lines one can multiply in theory by n the input dc voltage charging amplitude. In order to understand the operating behavior of this electromagnetic system and to further optimize its operation it is fundamental to theoretically model it, that is to calculate the voltage amplitudes at each circuit point and the time instant that happens. In order to do this, one needs to define the reflection and transmission coefficients where impedance discontinuity occurs. The experimental results of a fast solid-state switch, which discharges a three stage Blumlein stack, will be compared with theoretical ones.

Solid-State Bipolar Marx Converter with Output Transformer and Energy Recovery

The purpose of this paper is to present and discuss a general HV topology of the solid-state Marx modulator, for unipolar or bipolar generation connected with a step-up transformer to increase the output voltage applied to a resistive load. Due to the use of an output transformer, discussion about the reset of the transformer is made to guarantee zero average voltage applied to the primary. It is also discussed the transformer magnetizing energy recovering back to the energy storage capacitors. Simulation results for a circuit that generates 100 kV pulses using 1000 V semiconductors are presented and discussed regarding the voltage and current stress on the semiconductors and result obtained.