A two terminal optical signal and image processing p-i-n/p-i-n image and colour sensor

A two terminal optically addressed image processing device based on two stacked sensing/switching p-i-n a-SiC:H diodes is presented. The charge packets are injected optically into the p-i-n sensing photodiode and confined at the illuminated regions changing locally the electrical field profile across the p-i-n switching diode. A red scanner is used for charge readout. The various design parameters and addressing architecture trade-offs are discussed. The influence on the transfer functions of an a-SiC:H sensing absorber optimized for red transmittance and blue collection or of a floating anode in between is analysed. Results show that the thin a-SiC:H sensing absorber confines the readout to the switching diode and filters the light allowing full colour detection at two appropriated voltages. When the floating anode is used the spectral response broadens, allowing B&W image recognition with improved light-to-dark sensitivity. A physical model supports the image and colour recognition process.

Enhanced short wavelength response in laser-scanned-photodiode image sensor using an a-SiC : H/a-Si : H tandem structure

We report in this paper the recent advances we obtained in optimizing a color image sensor based on the laser-scanned-photodiode (LSP) technique. A novel device structure based on a a-SiC:H/a-Si:H pin/pin tandem structure has been tested for a proper color separation process that takes advantage on the different filtering properties due to the different light penetration depth at different wavelengths a-SM and a-SiC:H. While the green and the red images give, in comparison with previous tested structures, a weak response, this structure shows a very good recognition of blue color under reverse bias, leaving a good margin for future device optimization in order to achieve a complete and satisfactory RGB image mapping. Experimental results about the spectral collection efficiency are presented and discussed from the point of view of the color sensor applications. The physics behind the device functioning is explained by recurring to a numerical simulation of the internal electrical configuration of the device.

Laser scanned photodiodes (LSP) for Image sensing

An optimized ZnO:Al/a-pin SixCl1-x:H/Al configuration for the laser scanned photodiode (LSP) imaging detector is proposed. The LSP utilizes light induced depletion layers as detector and a laser beam for readout. The effect of the sensing element structure, cell configuration and light source flux are investigated and correlated with the sensor output characteristics. Experimental data reveal that the large optical gap and the low conductivity of the doped a-SixC1-x:H layers are responsible by an induced inversion layer at the illuminated interfaces which blocks the carrier collection. These insulator-like layers act as MIS gates preventing image smearing. The physical background of the LSP is discussed.

Laser scanned photodiodes (LSPs) for image sensing

An optimized ZnO:Al/a-pin SixC1-x:H/Al configuration for the laser scanned photodiode (LSP) imaging detector is proposed and the read-out parameters improved. The effect of the sensing element structure, cell configuration and light source flux are investigated and correlated with the sensor output characteristics. Data reveals that for sensors with wide band gap doped layers an increase on the image signal optimized to the blue is achieved with a dynamic range of two orders of magnitude, a responsivity of 6 mA W-1 and a sensitivity of 17 muW cm(-2) at 530 nm. The main output characteristics such as image responsivity, resolution, linearity and dynamic range were analyzed under reverse, forward and short circuit modes. The results show that the sensor performance can be optimized in short circuit mode. A trade-off between the scan time and the required resolution is needed since the spot size limits the resolution due to the cross-talk between dark and illuminated regions leading to blurring effects.

: SiC Multilayer Photonic Structures with Self Optical Bias Amplification

Characteristics of tunable wavelength pi'n/pin filters based on a-SiC:H multilayered stacked cells are studied both experimental and theoretically. Results show that the device combines the demultiplexing operation with the simultaneous photodetection and self amplification of the signal. An algorithm to decode the multiplex signal is established. A capacitive active band-pass filter model is presented and supported by an electrical simulation of the state variable filter circuit. Experimental and simulated results show that the device acts as a state variable filter. It combines the properties of active high-pass and low-pass filter sections into a capacitive active band-pass filter using a changing photo capacitance to control the power delivered to the load.

Fotodetector e dispositivo WDM integrados

Ao longo deste trabalho é apresentada a caracterização optoelectrónica de uma estrutura semicondutora empilhada de fotodíodos PIN (Positive-Intrinsic-Negative), baseados em silício amorfo hidrogenado (a-Si:H - Hydrogenated Amorphous Silicon) e siliceto de carbono amorfo hi-drogenado (a-SiC:H - Hydrogenated Amorphous Silicon Carbide), em que ambos funcionam como filtros ópticos na zona visível do espectro electromagnético e cuja sensibilidade espectral na região do visível é modulada pelo sinal de tensão eléctrico aplicado e pela presença de polarização óptica adicional (radiação de fundo). Pretende-se utilizar a característica de sensor de cor destes dispositivos semicondutores para realizar a demultiplexagem de sinais ópticos e desenvolver um algoritmo que permita fazer o reco-nhecimento autónomo do sinal transmitido em cada canal, tendo em vista a utilização de vários ca-nais para a transmissão de sinais a curta distância. A transmissão destes sinais deverá ser suportada no meio de transmissão fibra óptica, que constituirá uma importante mais-valia na optimização do sistema WDM (Wavelength Division Mul-tiplexing), permitindo optimizar a transmissão de sinais. Pelas suas capacidades intrínsecas, as fi-bras ópticas de plástico (POF - Plastic Optical Fibers) são uma solução adequada para a transmis-são de sinais no domínio visível do espectro electromagnético a curtas distâncias. Foi realizada uma sucinta caracterização optoelectrónica da estrutura semicondutora sob diferentes condições de iluminação, variando o comprimento de onda e a iluminação de fundo que influencia a resposta espectral do dispositivo semicondutor, variando as cores dos fundos inciden-tes, variando o lado incidente do fundo sobre a estrutura semicondutora, variando a intensidade des-ses mesmos fundos incidentes e também variando a frequência do sinal de dados. Para a transmissão dos sinais de dados foram utilizados três dispositivos LED (Light-Emitting Diode) com as cores vermelho (626nm), verde (525nm) e azul (470nm) a emitir os respec-tivos sinais de dados sobre a estrutura semicondutora e onde foram aplicadas diversas configurações de radiação de fundo incidente, variando as cores dos fundos incidentes, variando o lado incidente do fundo sobre a estrutura semicondutora e variando também a intensidade desses mesmos fundos incidentes. Com base nos resultados obtidos ao longo deste trabalho, foi possível aferir sobre a influên-cia da presença da radiação de fundo aplicada ao dispositivo, usando diferentes sequências de dados transmitidos nos vários canais. Sob polarização inversa, e com a aplicação de um fundo incidente no lado frontal da estrutura semicondutora os valores de fotocorrente gerada são amplificados face aos valores no escuro, sendo que os valores mais altos foram encontrados com a aplicação do fundo de cor violeta, contribuindo para tal, o facto do sinal do canal vermelho e canal verde serem bastan-te amplificados com a aplicação deste fundo. Por outro lado, com a aplicação dos fundos incidentes no lado posterior da estrutura semi-condutora, o sinal gerado não é amplificado com nenhuma cor, no entanto, a aplicação do fundo de cor azul proporciona a distinção do sinal proveniente do canal azul e do canal vermelho, sendo que quando está presente um sinal do canal vermelho, o sinal é fortemente atenuado e com a presença do sinal do canal azul o sinal gerado aproxima-se mais do valor de fotocorrente gerada com a estru-tura no escuro. O algoritmo implementado ao longo deste trabalho, permite efectuar o reconhecimento au-tónomo da informação transmitida por cada canal através da leitura do sinal da fotocorrente forne-cida pelo dispositivo quando sujeito a uma radiação de fundo incidente violeta no lado frontal e uma radiação de fundo incidente azul no lado posterior. Este algoritmo para a descodificação dos sinais WDM utiliza uma aplicação gráfica desenvolvida em Matlab que com base em cálculos e compara-ções de sinal permite determinar a sequência de sinal dos três canais ópticos incidentes. O trabalho proposto nesta tese é um módulo que se enquadra no desenvolvimento de um sistema integrado de comunicação óptica a curta distância, que tem sido alvo de estudo e que resulta das conclusões de trabalhos anteriores, em que este dispositivo e outros de configuração idêntica foram analisados, de forma a explorar a sua utilização na implementação da tecnologia WDM den-tro do domínio do espectro visível e utilizando as POF como meio de transmissão.

Multilayer Architectures Based on a-SiC:H Material: Tunable Wavelength Filters in Optical Processing Devices

The characteristics of tunable wavelength filters based on a-SiC:H multilayered stacked pin cells are studied both theoretically and experimentally. The optical transducers were produced by PECVD and tested for a proper fine tuning of the cyan and yellow fluorescent proteins emission. The active device consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructures sandwiched between two transparent contacts. Experimental data on spectral response analysis, current-voltage characteristics and color and transmission rate discrimination are reported. Cyan and yellow fluorescent input channels were transmitted together, each one with a specific transmission rate and different intensities. The multiplexed optical signal was analyzed by reading out, under positive and negative applied voltages, the generated photocurrents. Results show that the optimized optical transducer has the capability of combining the transient fluorescent signals onto a single output signal without losing any specificity (color and intensity). It acts as a voltage controlled optical filter: when the applied voltages are chosen appropriately the transducer can select separately the cyan and yellow channel emissions (wavelength and frequency) and also to quantify their relative intensities. A theoretical analysis supported by a numerical simulation is presented.

Photodetector with integrated optical thin film filters

This paper reports on optical filters based on a-SiC:H tandem pi'n/pin heterostructures. The spectral sensitivity is analyzed. Steady state optical bias with different wavelengths are applied from each front and back sides and the photocurrent is measured. Results show that it is possible to control the sensitivity of the device and to tune a specific wavelength range by combining radiations with complementary light penetration depths. The transfer characteristics effects due to changes in the front and back optical bias wavelength are discussed. Depending on the wavelength of the external background and irradiation side, the device acts either as a short- or a long-pass band filter or as a band-stop filter. The output waveform presents a nonlinear amplitude-dependent response to the wavelengths of the input channels.

Capacitive effects in pinpin photodiodes

The application of a-SiC:H/a-Si:H pinpin photodiodes for optoelectronic applications as a WDM demultiplexer device has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. This is required in short range optical communication applications, where for costs reasons the link is provided by Plastic Optical Fibers. Characterization of these devices has shown the presence of large photocapacitive effects. By superimposing background illumination to the pulsed channel the device behaves as a filter, producing signal attenuation, or as an amplifier, producing signal gain, depending on the channel/background wavelength combination. We present here results, obtained by numerical simulations, about the internal electric configuration of a-SiC:H/a-Si:H pinpin photodiode. These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photo-capacitance due to the accumulation of space charge localized at the bottom diode that, according to the Shockley-Read-Hall model, it is mainly due to defect trapping. Experimental result about measurement of the photodiode capacitance under different conditions of illumination and applied bias will be also presented. The combination of these analyses permits the description of a wavelength controlled photo-capacitance that combined with the series and parallel resistance of the diodes may result in the explicit definition of cut off frequencies for frequency capacitive filters activated by the light background or an oscillatory resonance of photogenerated carriers between the two diodes. (C) 2013 Elsevier B.V. All rights reserved.

Direct Color Sensor, Optical Amplifier and Demux Device Integrated on a Single Monolithic SiC Photodetector

A pi'n/pin a-SiC:H voltage and optical bias controlled device is presented and its behavior as image and color sensor, optical amplifier and demux device is discussed. The design and the light source properties are correlated with the sensor output characteristics. Different readout techniques are used. When a low power monochromatic scanner readout the generated carriers the transducer recognizes a color pattern projected on it acting as a direct color and image sensor. Scan speeds up to 10(4) lines per second are achieved without degradation in the resolution. If the photocurrent generated by different monochromatic pulsed channels is readout directly, the information is demultiplexed. Results show that it is possible to decode the information from three simultaneous color channels without bit errors at bit rates per channel higher than 4000 bps. Finally, when triggered by light of appropriated wavelength, it can amplify or suppress the generated photocurrent working as an optical amplifier (C) 2009 Published by Elsevier Ltd.

Embedded platform for ECG biometric recognition

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações

Implementação de WDM com 4 canais no espetro do visível

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações

Sistema WDM de 4 canais

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações

Choosing best components for an amputee: a methodology for the best decision-making

The harmony between the stump and the prosthesis is critical to allow it to fulfill its function enabling an efficient gait. A well fitted socket, with an efficient and comfortable suspension, allows the amputee to continue their daily living activities, maintaining the stump functional, making this correlation between socket and suspension very important in the functionality of the prosthesis, mobility and overall satisfaction with the device. Of our knowledge, the quantitative correlation between all of these factors as not yet been assessed. Aim of study: Verify and confirm the process of decision-making for four different trans-tibial prostheses with suspension systems: Hypobaric(A), PIN(B), Classic Suction(C) and Vacuum Active –VASS(D) according data provided by gait efficiency (mlO2/kg/m) imagiology (pistonning) and amputee perception.

Intermodulation in active reconfigurable antennas

Due to the application of active components into antennas these became a source of distortion on wireless communication systems. In this paper we explore the nonlinear effects occurring in a frequency reconfigurable antenna operating with a PIN Diode. We describe the measurement setup used to check the antenna intermodulation products and the measured compression and third order intermodulation limitations of a frequency reconfigurable antenna, operating at the UMTS and WLAN frequencies.