DNA interaction and cytotoxicity studies of new ruthenium(II) cyclopentadienyl derivative complexescontaining heteroaromatic ligands

Four ruthenium(II) complexes with the formula [Ru(eta(5)-C(5)H(5))(PP)L][CF(3)SO(3)], being (PP = two triphenylphosphine molecules), L = 1-benzylimidazole, 1; (PP = two triphenylphosphine molecules), L = 2,2'bipyridine, 2; (PP = two triphenylphosphine molecules), L = 4-Methylpyridine, 3; (PP = 1,2-bis(diphenylphosphine) ethane), L = 4-Methylpyridine, 4, were prepared, in view to evaluate their potentialities as antitumor agents. The compounds were completely characterized by NMR spectroscopy and their crystal and molecular structures were determined by X-ray diffraction. Electrochemical studies were carried out giving for all the compounds quasi-reversible processes. The images obtained by atomic force microscopy (AFM) suggest interaction with pBR322 plasmid DNA. Measurements of the viscosity of solutions of free DNA and DNA incubated with different concentrations of the compounds confirmed this interaction. The cytotoxicity of compounds 1234 was much higher than that of cisplatin against human leukemia cancer cells (HL-60 cells). IC(50) values for all the compounds are in the range of submicromolar amounts. Apoptotic death percentage was also studied resulting similar than that of cisplatin. (C) 2010 Elsevier Inc. All rights reserved.

Fotodetector e dispositivo WDM integrados

Ao longo deste trabalho é apresentada a caracterização optoelectrónica de uma estrutura semicondutora empilhada de fotodíodos PIN (Positive-Intrinsic-Negative), baseados em silício amorfo hidrogenado (a-Si:H - Hydrogenated Amorphous Silicon) e siliceto de carbono amorfo hi-drogenado (a-SiC:H - Hydrogenated Amorphous Silicon Carbide), em que ambos funcionam como filtros ópticos na zona visível do espectro electromagnético e cuja sensibilidade espectral na região do visível é modulada pelo sinal de tensão eléctrico aplicado e pela presença de polarização óptica adicional (radiação de fundo). Pretende-se utilizar a característica de sensor de cor destes dispositivos semicondutores para realizar a demultiplexagem de sinais ópticos e desenvolver um algoritmo que permita fazer o reco-nhecimento autónomo do sinal transmitido em cada canal, tendo em vista a utilização de vários ca-nais para a transmissão de sinais a curta distância. A transmissão destes sinais deverá ser suportada no meio de transmissão fibra óptica, que constituirá uma importante mais-valia na optimização do sistema WDM (Wavelength Division Mul-tiplexing), permitindo optimizar a transmissão de sinais. Pelas suas capacidades intrínsecas, as fi-bras ópticas de plástico (POF - Plastic Optical Fibers) são uma solução adequada para a transmis-são de sinais no domínio visível do espectro electromagnético a curtas distâncias. Foi realizada uma sucinta caracterização optoelectrónica da estrutura semicondutora sob diferentes condições de iluminação, variando o comprimento de onda e a iluminação de fundo que influencia a resposta espectral do dispositivo semicondutor, variando as cores dos fundos inciden-tes, variando o lado incidente do fundo sobre a estrutura semicondutora, variando a intensidade des-ses mesmos fundos incidentes e também variando a frequência do sinal de dados. Para a transmissão dos sinais de dados foram utilizados três dispositivos LED (Light-Emitting Diode) com as cores vermelho (626nm), verde (525nm) e azul (470nm) a emitir os respec-tivos sinais de dados sobre a estrutura semicondutora e onde foram aplicadas diversas configurações de radiação de fundo incidente, variando as cores dos fundos incidentes, variando o lado incidente do fundo sobre a estrutura semicondutora e variando também a intensidade desses mesmos fundos incidentes. Com base nos resultados obtidos ao longo deste trabalho, foi possível aferir sobre a influên-cia da presença da radiação de fundo aplicada ao dispositivo, usando diferentes sequências de dados transmitidos nos vários canais. Sob polarização inversa, e com a aplicação de um fundo incidente no lado frontal da estrutura semicondutora os valores de fotocorrente gerada são amplificados face aos valores no escuro, sendo que os valores mais altos foram encontrados com a aplicação do fundo de cor violeta, contribuindo para tal, o facto do sinal do canal vermelho e canal verde serem bastan-te amplificados com a aplicação deste fundo. Por outro lado, com a aplicação dos fundos incidentes no lado posterior da estrutura semi-condutora, o sinal gerado não é amplificado com nenhuma cor, no entanto, a aplicação do fundo de cor azul proporciona a distinção do sinal proveniente do canal azul e do canal vermelho, sendo que quando está presente um sinal do canal vermelho, o sinal é fortemente atenuado e com a presença do sinal do canal azul o sinal gerado aproxima-se mais do valor de fotocorrente gerada com a estru-tura no escuro. O algoritmo implementado ao longo deste trabalho, permite efectuar o reconhecimento au-tónomo da informação transmitida por cada canal através da leitura do sinal da fotocorrente forne-cida pelo dispositivo quando sujeito a uma radiação de fundo incidente violeta no lado frontal e uma radiação de fundo incidente azul no lado posterior. Este algoritmo para a descodificação dos sinais WDM utiliza uma aplicação gráfica desenvolvida em Matlab que com base em cálculos e compara-ções de sinal permite determinar a sequência de sinal dos três canais ópticos incidentes. O trabalho proposto nesta tese é um módulo que se enquadra no desenvolvimento de um sistema integrado de comunicação óptica a curta distância, que tem sido alvo de estudo e que resulta das conclusões de trabalhos anteriores, em que este dispositivo e outros de configuração idêntica foram analisados, de forma a explorar a sua utilização na implementação da tecnologia WDM den-tro do domínio do espectro visível e utilizando as POF como meio de transmissão.

Semiconductor Device as Optical Demultiplexer for Short Range Optical Communications

In this paper we present results on the use of a multilayered a-SiC:H heterostructure as a wavelength-division demultiplexing device for the visible light spectrum. The proposed device is composed of two stacked p-i-n photodiodes with intrinsic absorber regions adjusted to short and long wavelength absorption and carrier collection. An optoelectronic characterisation of the device was performed in the visible spectrum. Demonstration of the device functionality for WDM applications was done with three different input channels covering the long, the medium and the short wavelengths in the visible range. The recovery of the input channels is explained using the photocurrent spectral dependence on the applied voltage. An electrical model of the WDM device is proposed and supported by the solution of the respective circuit equations. Short range optical communications constitute the major application field, however other applications are also foreseen.

Plantas ornamentais tóxicas: contributo para a sua caracterização e perceção do risco de exposição ocupacional

Mestrado em Segurança e Higiene do Trabalho.

Dynamical analysis in growth models: Blumberg’s equation

We present a new dynamical approach to the Blumberg's equation, a family of unimodal maps. These maps are proportional to Beta(p, q) probability densities functions. Using the symmetry of the Beta(p, q) distribution and symbolic dynamics techniques, a new concept of mirror symmetry is defined for this family of maps. The kneading theory is used to analyze the effect of such symmetry in the presented models. The main result proves that two mirror symmetric unimodal maps have the same topological entropy. Different population dynamics regimes are identified, when the intrinsic growth rate is modified: extinctions, stabilities, bifurcations, chaos and Allee effect. To illustrate our results, we present a numerical analysis, where are demonstrated: monotonicity of the topological entropy with the variation of the intrinsic growth rate, existence of isentropic sets in the parameters space and mirror symmetry.

Development of an injectable grout for concrete repair and strengthening

This paper deals with the coupled effect of temperature and silica fume addition on rheological, mechanical behaviour and porosity of grouts based on CEMI 42.5R, proportioned with a polycarboxylate-based high range water reducer. Preliminary tests were conducted to focus on the grout best able to fill a fibrous network since the goal of this study was to develop an optimized grout able to be injected in a mat of steel fibers for concrete strengthening. The grout composition was developed based on criteria for fresh state and hardened state properties. For a CEMI 42.5R based grout different high range water reducer dosages (0%, 0.2%, 0.4%, 0.5%, 0.7%) and silica fume (SF) dosages (0%, 2%, 4%) were tested (as replacement of cement by mass). Rheological measurements were used to investigate the effect of polycarboxylates (PCEs) and SF dosage on grout properties, particularly its workability loss, as the mix was to be injected in a matrix of steel fibers for concrete jacketing. The workability behaviour was characterized by the rheological parameters yield stress and plastic viscosity (for different grout temperatures and resting times), as well as the procedures of mini slump cone and funnel flow time. Then, further development focused only on the best grout compositions. The cement substitution by 2% of SF exhibited the best overall behaviour and was considered as the most promising compared to the others compositions tested. Concerning the fresh state analysis, a significant workability loss was detected if grout temperature increased above 35 degrees C. Below this temperature the grout presented a self-levelling behaviour and a life time equal to 45 min. In the hardened state, silica fumes increased not only the grout's porosity but also the grout's compressive strength at later ages, since the pozzolanic contribution to the compressive strength does not occur until 28 d and beyond. (C) 2012 Elsevier Ltd. All rights reserved.

Real-time rheology of actively growing bacteria

The population growth of a Staphylococcus aureus culture, an active colloidal system of spherical cells, was followed by rheological measurements, under steady-state and oscillatory shear flows. We observed a rich viscoelastic behavior as a consequence of the bacteria activity, namely, of their multiplication and density-dependent aggregation properties. In the early stages of growth (lag and exponential phases), the viscosity increases by about a factor of 20, presenting several drops and full recoveries. This allows us to evoke the existence of a percolation phenomenon. Remarkably, as the bacteria reach their late phase of development, in which the population stabilizes, the viscosity returns close to its initial value. Most probably, this is caused by a change in the bacteria physiological activity and in particular, by the decrease of their adhesion properties. The viscous and elastic moduli exhibit power-law behaviors compatible with the "soft glassy materials" model, whose exponents are dependent on the bacteria growth stage. DOI: 10.1103/PhysRevE.87.030701.

Biological activity and cellular uptake of [Ru(eta(5)-C5H5)(PPh3)(Me(2)bpy)][CF3SO3] complex

Anticancer activity of the new [Ru(eta(5)-C5H5)(PPh3)(Me(2)bpy)][CF3SO3] (Me(2)bpy = 4,4'-dimethyl-2,2'-bipyridine) complex was evaluated in vitro against several human cancer cell lines, namely A2780, A2780CisR, HT29, MCF7, MDAMB231 and PC3. Remarkably, the IC50 values, placed in the nanomolar and sub-micromolar range, largely exceeded the activity of cisplatin. Binding to human serum albumin, either HSA (human serum albumin) or HSA(faf) (fatty acid-free human serum albumin) does not affect the complex activity. Fluorescence studies revealed that the present ruthenium complex strongly quench the intrinsic fluorescence of albumin. Cell death by the [Ru(eta(5)-C5H5)(PPh3)(Me(2)bpy)][CF3SO3] complex was reduced in the presence of endocytosis modulators and at low temperature, suggesting an energy-dependent mechanism consistent with endocytosis. On the whole, the biological activity evaluated herein suggests that the complex could be a promising anticancer agent. (C) 2013 Elsevier Inc. All rights reserved.

Optical demultiplexer based on an a-SiC:H voltage controlled device

In this paper we present results on the use of a semiconductor heterostructure based on a-SiC:H as a wavelength-division demultiplexer for the visible light spectrum. The proposed device is composed of two stacked p-i-n photodiodes with intrinsic absorber regions adjusted to short and long wavelength absorption and carrier collection. An optoelectronic characterisation of the device was performed in the visible spectrum. Demonstration of the device functionality for WDM applications was done with three different input channels covering the long, the medium and the short wavelengths in the visible range. The recovery of the input channels is explained using the photocurrent spectral dependence on the applied voltage. An electrical model of the WDM device is proposed and supported by the solution of the respective circuit equations. Short range optical communications constitute the major application field however other applications are foreseen. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optoelectronic properties of a-Si(1-x)C(x)H films grown in hydrogen diluted silane-methane plasma

This work reports on the optoelectronic properties and device application of hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films grown by plasma-enhanced chemical vapour deposition (PECVD). The films with an optical bandgap ranging from about 1.8 to 2.0 eV were deposited in hydrogen diluted silane-methane plasma by varying the radio frequency power. Several n-i-p structures with an intrinsic a-Si(1-x)C(x):H layer of different optical gaps were also fabricated. The optimized devices exhibited a diode ideality factor of 1.4-1.8, and a leakage current of 190-470 pA/cm(2) at -5 V. The density of deep defect states in a-Si(1-x)C(x):H was estimated from the transient dark current measurements and correlated with the optical bandgap and carbon content. Urbach energies for the valence band tail were also determined by analyzing the spectral response within sub-bandgap energy range. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

As representações das educadoras de infância na inclusão de crianças com nee

Dissertação apresentada à Escola Superior de Educação de Lisboa para obtenção do grau de Mestre em Ciências da Educação - Especialidade Educação Especial: Problemas de Cognição e Multideficiência

Analysis and simulation of a-Si Ha-SiC HPINIP structures for color image detection

It is presented in this paper a study on the photo-electronic properties of multi layer a-Si: H/a-SiC: H p-i-n-i-p structures. This study is aimed to give an insight into the internal electrical characteristics of such a structure in thermal equilibrium, under applied Was and under different illumination condition. Taking advantage of this insight it is possible to establish a relation among-the electrical behavior of the structure the structure geometry (i.e. thickness of the light absorbing intrinsic layers and of the internal n-layer) and the composition of the layers (i.e. optical bandgap controlled through percentage of carbon dilution in the a-Si1-xCx: H layers). Showing an optical gain for low incident light power controllable by means of externally applied bias or structure composition, these structures are quite attractive for photo-sensing device applications, like color sensors and large area color image detector. An analysis based on numerical ASCA simulations is presented for describing the behavior of different configurations of the device and compared with experimental measurements (spectral response and current-voltage characteristic). (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

a-SiH p-i-n structures with extreme i-layer thickness

We present measurements and numerical simulation of a-Si:H p-i-n detectors with a wide range of intrinsic layer thickness between 2 and 10 pm. Such a large active layer thickness is required in applications like elementary particle detectors or X-ray detectors. For large thickness and depending on the applied bias, we observe a sharp peak in the spectral response in the red region near 700 nm. Simulation results obtained with the program ASCA are in agreement with the measurement and permit the explanation of the experimental data. In thick samples holes recombine or are trapped before reaching the contacts, and the conduction mechanism is fully electron dominated. As a consequence, the peak position in the spectral response is located near the optical band gap of the a-Si:H i-layer. (C) 2009 Elsevier B.V. All rights reserved.

A comunicação nos Hospitais Públicos Portugueses: uma questão de excelência

Os Hospitais são organizações extraordinariamente complicadas, representando uma das formas mais complexas de organização humana. Desempenham, igualmente, um papel inquestionável e essencial para a sociedade – a prestação dos cuidados de saúde, mas também a promoção, prevenção e protecção da mesma. Ao contrário do que se pensa, a compreensão da necessidade de desenvolvimento de departamentos de comunicação organizacional no seio das instituições de saúde públicas não é só uma realidade nos países anglo-saxónicos. Na realidade um pouco por toda a Europa a consciencialização sobre o valor intrínseco da comunicação organizacional e institucional para o melhor desempenho das unidades de saúde é já uma questão de facto ao contrário do que parece continuar a acontecer em Portugal. Esta investigação tem como objectivo por um lado a caracterização das estruturas de comunicação existentes nos hospitais públicos portugueses e por outro lado, evidenciar as áreas que são mais privilegiadas por estas estruturas. É importante num momento de mudança em termos de políticas públicas de saúde, a clarificação do papel dos departamentos de comunicação no seio das unidades hospitalares colocando-os enquanto órgãos estratégicos no desenvolvimento e na prossecução dos objectivos das instituições.

A loucura e o cinema: representações cinematográficas de personalidade limite

Dissertação apresentada à Escola Superior de Comunicação Social como parte dos requisitos para obtenção de grau de mestre em Audiovisual e Multimédia.