Effects of torsional disorder on poly-para-phenylene

We study the effect of thermal disorder on the electronic structure of one-dimensional poly-para-phenylene (PPP). In a real chain the torsion angles between rings are bound to be distributed over a range of values, which depend on temperature, and thus the chain is intrinsically disordered. In this study we simulated this kind of thermally induced off-diagonal disorder through the simple Huckel method. We base our Hamiltonian on ab initio results for the effect of temperature on torsion angles, and the effect of torsion angles on the energy gap. We analyze the electronic structure of 200-monomer-long chains focusing on the density of states, and the associated localization character (measured by the inverse participation ratio). Our results contrast with the usually assumed Gaussian-shaped density of localized states for disordered systems. (C) 2009 Elsevier B.V. All rights reserved.

MAGNETO-OPTICAL ABSORPTION AND PHOTOMAGNETISM IN EUROPIUM CHALCOGENIDES

The absorption threshold in EuTe and EuSe was investigated as a function of applied magnetic field in the Faraday geometry. A well-resolved doublet of sharp dichroic lines was observed when the magnetic field induced ferromagnetic alignment of the spins in the crystal lattice. In contrast, at zero magnetic field only a broad and featureless absorption onset is seen. These results are fully explained in terms of a model of electronic transitions between localized states at the Eu lattice site and a tight-binding conduction band, which incorporates the formation of spin domains. Based on this model, predictions are made concerning the possibility of inducing magnetization of the spin lattices by illuminating the material with circularly polarized light.

Spectroscopic evidence of extended states in quantized Hall phase of weakly coupled GaAs/AlGaAs multi-layers

The influence of the interlayer coupling on formation of the quantized Hall conductor phase at the filling factor v = 2 was studied in the multi-layer GaAs/AlGaAs heterostructures. The disorder broadened Gaussian photoluminescence line due to the localized electrons was found in the quantized Hall phase of the isolated multi-quantum well structure. On the other hand, the quantized Hall phase of the weakly coupled multi-layers emitted an unexpected asymmetrical line similar to that one observed in the metallic electron systems. We demonstrated that the observed asymmetry is caused by a partial population of the extended electron states formed in the quantized Hall conductor phase due to the interlayer percolation. A sharp decrease of the single-particle scattering time associated with these extended states was observed at the filling factor v = 2. (c) 2007 Elsevier B.V. All rights reserved.