A comunicação dialógica como fator determinante para os processos de ensino-aprendizagem que ocorrem na capacitação rural: um estudo de caso em um órgão público de extensão localizado no interior do Estado de São Paulo

O objetivo deste artigo é discutir quais caminhos ou descaminhos estão sendo percorridos nos processos de capacitação rural de extensionistas e agricultores de algumas localidades do interior do Estado de São Paulo. Para tanto, a pesquisa aqui relatada teve como pressuposto analisar as práticas pedagógicas e os processos de comunicação que ocorrem durante as capacitações formativas entre extensionistas e agricultores, bem como entre formadores e extensionistas. Buscou-se, ainda, identificar as influências da comunicação nos processos de ensino e aprendizagem, a fim de se repensar práticas relativas à comunicação que devem ser utilizadas nos processos de ensino-aprendizagem. Para tanto, o método de coleta de dados foi o estudo de caso com viés fenomenológico. Os dados anunciam a necessidade da formação continuada com orientação de profissionais da pedagogia a fim de que mudanças efetivas possam ser realizadas.

Considerações sobre o papel da comunicação científica na educação em química

In the present work, we provide some considerations about the role of scientific communication in Chemistry Education. Such considerations may subsidize the development of communication in scientific language by Chemistry students. These considerations are based on information collected during a participatory research for the production of didactic material about scientific communication. The meetings were audio recorded and the contents of the participants' speeches were divided into categories. The category analysis supported the elaboration of the considerations.

Comunicação em saúde e discurso do sujeito coletivo: semelhanças nas diferenças e diferenças nas diferenças

A comunicação é sempre uma ação que acontece num contexto ou quadro social ou psicossocial,defi nido, entre outros atributos, por apresentarem um “idioma” de “representações sociais” que os indivíduos acessam para estabelecerem contatos uns com os outros. No campo da Saúde Coletiva, a tarefa de fazer com que os habitantes de determinadas sociedades, coletividades ou grupos contatem e acolham ideias e/ou práticas que permitam avanços no enfrentamento das diversas facetas do adoecer humano é uma busca constante. Neste artigo, procuramos demonstrar como o Discurso do Sujeito Coletivo, como técnica de pesquisa empírica para a recuperação do pensamento de coletividades, permite iluminar o campo social pesquisado, resgatando nele o universo das diferenças e semelhanças entre as diferentes concepções e visões sobre eventos de saúde e doença dos atores sociais ou sujeitos coletivos que o habitam. Assim, a comunicação em saúde deve trabalhar num contexto de tensão constante entre o semelhante e o diferente, considerando que o comunicador, educador ou promotor de saúde, para entender os indivíduos com os quais interage, precisa ter em mente que eles aderem às representações sociais por instinto gregário, por necessidade de identificação coletiva e por interesses objetivos

Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiO(x) and TiO(x)N(y) gate dielectric layer

Metal oxide-semiconductor capacitors with TiO(x) deposited with different O(2) partial pressures (30%, 35%, and 40%) and annealed at 550, 750, and 1000 degrees C were fabricated and characterized. Fourier transform infrared, x-ray near edge spectroscopy, and elipsometry measurements were performed to characterize the TiO(x) films. TiO(x)N(y) films were also obtained by adding nitrogen to the gaseous mixture and physical results were presented. Capacitance-voltage (1 MHz) and current-voltage measurements were utilized to obtain the effective dielectric constant, effective oxide thickness, leakage current density, and interface quality. The results show that the obtained TiO(x) films present a dielectric constant varying from 40 to 170 and a leakage current density (for V(G)=-1 V, for some structures as low as 1 nA/cm(2), acceptable for complementary metal oxide semiconductor circuits fabrication), indicating that this material is a viable, in terms of leakage current density, highk substitute for current ultrathin dielectric layers. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3043537]

Nitrogen doping of SiC thin films deposited by RF magnetron sputtering

Silicon carbide thin films (Si(x)C(y)) were deposited in a RF (13.56 MHz) magnetron sputtering system using a sintered SiC target (99.5% purity). In situ doping was achieved by introducing nitrogen into the electric discharge during the growth process of the films. The N(2)/Ar flow ratio was adjusted by varying the N(2) flow rate and maintaining constant the Ar flow rate. The structure, composition and bonds formed in the nitrogen-doped Si (x) C (y) thin films were investigated by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), Raman spectroscopy and Fourier transform infrared spectrometry (FTIR) techniques. RBS results indicate that the carbon content in the film decreases as the N(2)/Ar flow ratio increases. Raman spectra clearly reveal that the deposited nitrogen-doped SiC films are amorphous and exhibited C-C bonds corresponding to D and G bands. After thermal annealing, the films present structural modifications that were identified by XRD, Raman and FTIR analyses.

Improved effective charge density in MOS capacitors with PECVD SiOxNy dielectric layer obtained at low RF power

In this work SiOxNy films are produced and characterized. Series of samples were deposited by the plasma enhanced chemical vapor deposition (PECVD) technique at low temperatures from silane (SiH4), nitrous oxide (N2O) and helium (He) precursor gaseous mixtures, at different deposition power in order to analyze the effect of this parameter on the films structural properties, on the SiOxNy/Si interface quality and on the SiOxNy effective charge density. In order to compare the film structural properties with the interface (SiOxNy/Si) quality and effective charge density, MOS capacitors were fabricated using these films as dielectric layer. X-ray absorption near-edge spectroscopy (XANES), at the Si-K edge, was utilized to investigate the structure of the films and the material bonding characteristics were analyzed through Fourier transform infrared spectroscopy (FTIR). The MOS capacitors were characterized by low and high frequency capacitance (C-V) measurements, in order to obtain the interface state density (D-it) and the effective charge density (N-ss). An effective charge density linear reduction for decreasing deposition power was observed, result that is attributed to the smaller amount of ions present in the plasma for low RF power. (C) 2008 Elsevier B.V. All rights reserved.

Production and characterization of RF-sputtered PbO-GeO(2) amorphous thin films containing silver and gold nanoparticles

In the present work we report the characterization of PbO-GeO(2) films containing silver nanoparticles (NPs). Radio Frequency (RF) co-sputtering was used for deposition of amorphous films on glass substrates. Targets of 60PbO-40GeO(2) (in wt%) and bulk silver with purity of 99.99% were RF-sputtered using 3.5 m Torr of argon. The concentration of silver and gold NPs in the films was controlled varying the RF-power applied to the targets (40-50W for the PbO-GeO(2) target; 6-8 W for the metallic target). The films obtained were annealed in air at different temperatures and various periods of time. Absorption measurements have shown strong NPs surface plasmon bands. Different widths and peak wavelengths were observed, indicating that size, shape and distribution of the silver NPs are dependent on the deposition process parameters and on the annealing of the samples. X-Ray Fluorescence and Transmission Electron Microscopy were also used to characterize the samples. (C) 2010 Elsevier B.V. All rights reserved.