Computer Networks Virtualization with GNS3: Evaluating a solution to optimize resources and achieve a distance learning

Designing educational resources allow students to modify their learning process. In particular, on-line and downloadable educational resources have been successfully used in engineering education the last years [1]. Usually, these resources are free and accessible from web. In addition, they are designed and developed by lecturers and used by their students. But, they are rarely developed by students in order to be used by other students. In this work-in-progress, lecturers and students are working together to implement educational resources, which can be used by students to improve the learning process of computer networks subject in engineering studies. In particular, network topologies to model LAN (Local Area Network) and MAN (Metropolitan Area Network) are virtualized in order to simulate the behavior of the links and nodes when they are interconnected with different physical and logical design.

Interplay Between Structure, Stoichiometry, and Electron Transfer Dynamics in SILAR-based Quantum Dot-Sensitized Oxides

We quantify the rate and efficiency of picosecond electron transfer (ET) from PbS nanocrystals, grown by successive ionic layer adsorption and reaction (SILAR), into a mesoporous SnO2 support. Successive SILAR deposition steps allow for stoichiometry- and size-variation of the QDs, characterized using transmission electron microscopy. Whereas for sulfur-rich (p-type) QD surfaces substantial electron trapping at the QD surface occurs, for lead-rich (n-type) QD surfaces, the QD trapping channel is suppressed and the ET efficiency is boosted. The ET efficiency increase achieved by lead-rich QD surfaces is found to be QD-size dependent, increasing linearly with QD surface area. On the other hand, ET rates are found to be independent of both QD size and surface stoichiometry, suggesting that the donor–acceptor energetics (constituting the driving force for ET) are fixed due to Fermi level pinning at the QD/oxide interface. Implications of our results for QD-sensitized solar cell design are discussed.