Ultrathin high-index metasurfaces for shaping focused beams

The volume size of a converging wave, which plays a relevant role in image resolution, is governed by the wavelength of the radiation and the numerical aperture (NA) of the wavefront. We designed an ultrathin (λ/8 width) curved metasurface that is able to transform a focused field into a high-NA optical architecture, thus boosting the transverse and (mainly) on-axis resolution. The elements of the metasurface are metal-insulator subwavelength gratings exhibiting extreme anisotropy with ultrahigh index of refraction for TM polarization. Our results can be applied to nanolithography and optical microscopy.

Spontaneous persistent currents in a quantum spin Hall insulator

We present a mechanism for persistent charge current. Quantum spin Hall insulators hold dissipationless spin currents in their edges so that, for a given spin orientation, a net charge current flows which is exactly compensated by the counterflow of the opposite spin. Here we show that ferromagnetic order in the edge upgrades the spin currents into persistent charge currents without applied fields. For that matter, we study the Hubbard model including Haldane-Kane-Mele spin-orbit coupling in a zigzag ribbon and consider the case of graphene. We find three electronic phases with magnetic edges that carry currents reaching 0.4 nA, comparable to persistent currents in metallic rings, for the small spin-orbit coupling in graphene. One of the phases is a valley half metal.

Giant magnetoresistance in ultrasmall graphene based devices

By computing spin-polarized electronic transport across a finite zigzag graphene ribbon bridging two metallic graphene electrodes, we demonstrate, as a proof of principle, that devices featuring 100% magnetoresistance can be built entirely out of carbon. In the ground state a short zigzag ribbon is an antiferromagnetic insulator which, when connecting two metallic electrodes, acts as a tunnel barrier that suppresses the conductance. The application of a magnetic field makes the ribbon ferromagnetic and conductive, increasing dramatically the current between electrodes. We predict large magnetoresistance in this system at liquid nitrogen temperature and 10 T or at liquid helium temperature and 300 G.

Pollutant emissions during pyrolysis and combustion of waste printed circuit boards, before and after metal removal

The constant increase in the production of electronic devices implies the need for an appropriate management of a growing number of waste electrical and electronic equipment. Thermal treatments represent an interesting alternative to recycle this kind of waste, but particular attention has to be paid to the potential emissions of toxic by-products. In this study, the emissions from thermal degradation of printed circuit boards (with and without metals) have been studied using a laboratory scale reactor, under oxidizing and inert atmosphere at 600 and 850 °C. Apart from carbon oxides, HBr was the main decomposition product, followed by high amounts of methane, ethylene, propylene, phenol and benzene. The maximum formation of PAHs was found in pyrolysis at 850 °C, naphthalene being the most abundant. High levels of 2-, 4-, 2,4-, 2,6- and 2,4,6-bromophenols were found, especially at 600 °C. Emissions of PCDD/Fs and dioxin-like PCBs were quite low and much lower than that of PBDD/Fs, due to the higher bromine content of the samples. Combustion at 600 °C was the run with the highest PBDD/F formation: the total content of eleven 2,3,7,8-substituted congeners (tetra- through heptaBDD/Fs) was 7240 and 3250 ng WHO2005-TEQ/kg sample, corresponding to the sample with and without metals, respectively.

Large spin splitting in the conduction band of transition metal dichalcogenide monolayers

We study the conduction band spin splitting that arises in transition metal dichalcogenide (TMD) semiconductor monolayers such as MoS2, MoSe2, WS2, and WSe2 due to the combination of spin-orbit coupling and lack of inversion symmetry. Two types of calculation are done. First, density functional theory (DFT) calculations based on plane waves that yield large splittings, between 3 and 30 meV. Second, we derive a tight-binding model that permits to address the atomic origin of the splitting. The basis set of the model is provided by the maximally localized Wannier orbitals, obtained from the DFT calculation, and formed by 11 atomiclike orbitals corresponding to d and p orbitals of the transition metal (W, Mo) and chalcogenide (S, Se) atoms respectively. In the resulting Hamiltonian, we can independently change the atomic spin-orbit coupling constant of the two atomic species at the unit cell, which permits to analyze their contribution to the spin splitting at the high symmetry points. We find that—in contrast to the valence band—both atoms give comparable contributions to the conduction band splittings. Given that these materials are most often n-doped, our findings are important for developments in TMD spintronics.

Improving the photoactivity of bismuth vanadate thin film photoanodes through doping and surface modification strategies

Currently, one of the most attractive and desirable ways to solve the energy challenge is harvesting energy directly from the sunlight through the so-called artificial photosynthesis. Among the ternary oxides based on earth–abundant metals, bismuth vanadate has recently emerged as a promising photoanode. Herein, BiVO4 thin film photoanodes have been successfully synthesized by a modified metal-organic precursor decomposition method, followed by an annealing treatment. In an attempt to improve the photocatalytic properties of this semiconductor material for photoelectrochemical water oxidation, the electrodes have been modified (i) by doping with La and Ce (by modifying the composition of the BiVO4 precursor solution with the desired concentration of the doping element), and (ii) by surface modification with Au nanoparticles potentiostatically electrodeposited. La and Ce doping at concentrations of 1 and 2 at% in the BiVO4 precursor solution, respectively, enhances significantly the photoelectrocatalytic performance of BiVO4 without introducing important changes in either the material structure or the electrode morphology, according to XRD and SEM characterization. In addition, surface modification of the electrodes with Au nanoparticles further enhances the photocurrent as such metallic nanoparticles act as co-catalysts, promoting charge transfer at the semiconductor/solution interface. The combination of these two complementary ways of modifying the electrodes has resulted in a significant increase in the photoresponse, facilitating their potential application in artificial photosynthesis devices.