Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties

In this article, we investigate the parameters used in the MOCVD growth of GaAsN epilayers on GaAs substrates and some of their microstructures and optical properties. The N incorporation was found to mainly depend on the growth temperature and the fractional 1,1-dimethylhydrazine molar flow. A thin highly strained interface layer was observed between GaAsN and GaAs, which, contrary to previously published results, was not N enriched. The low-temperature (10 K) photoluminescence spectra were composed of several emissions that we attribute to a combination of interband transition and transitions involving localized defect states. (C) 2004 Elsevier B.V. All rights reserved.

[0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1): Dedicated to Professor Fang-hua Li on the occasion of her 70th birthday

Coherent Ge(Si)/Si(001) quantum dot islands grown by solid source molecular beam epitaxy at a growth temperature of 700degreesC were investigated using transmission electron microscopy working at 300 kV. The [001] zone-axis bright-field diffraction contrast images of the islands show strong periodicity with the change of the TEM sample substrate thickness and the period is equal to the effective extinction distance of the transmitted beam. Simulated images based on finite element models of the displacement field and using multi-beam dynamical diffraction theory show a high degree of agreement. Studies for a range of electron energies show the power of the technique for investigating composition segregation in quantum dot islands. (C) 2003 Elsevier B.V. All rights reserved.

TEM characterization of nanostructure and chemistry of semiconductor quantum structures

The power of advanced transmission electron microscopy in determining the nanostructures and chemistry of nanosized materials on the applications in semiconductor quantum structures was demonstrated.

Focused beam reflectance technique for in situ particle sizing in wastewater treatment settling tanks

Due to the complexities involved with measuring activated sludge floc size distributions, this parameter has largely been ignored by wastewater researchers and practitioners. One of the major reasons has been that instruments able to measure particle size distributions were complex, expensive and only provided off-line measurements. The Focused Beam Reflectance Method (FBRM) is one of the rare techniques able to measure the particle size distribution in situ. This paper introduces the technique for monitoring wastewater treatment systems and compares its performance with other sizing techniques. The issue of the optimal focal point is discussed, and similar conclusions as found in the literature for other particulate systems are drawn. The study also demonstrates the capabilities of the FBRM in evaluating the performance of settling tanks. Interestingly, the floc size distributions did not vary with position inside the settling tank flocculator. This was an unexpected finding, and seriously questioned the need for a flocculator in the settling tank. It is conjectured that the invariable size distributions were caused by the unique combination of high solids concentration, low shear and zeolite dosing. (C) 2004 Society of Chemical Industry.