Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO2

The influence that trace concentrations Of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 degreesC for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) less than or equal to 160 ppm by weight, the grain-boundary resistivity (p(gb)) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL greater than or equal to 310 ppm. The correlation between the resistance per unit grain-boundary area, p(gb), and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL greater than or equal to 310 ppm. hampered the scavenging reaction.