50 resultados para reactive nanowires
Resumo:
We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of individual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.
Resumo:
Agents make up an important part of game worlds, ranging from the characters and monsters that live in the world to the armies that the player controls. Despite their importance, agents in current games rarely display an awareness of their environment or react appropriately, which severely detracts from the believability of the game. Some games have included agents with a basic awareness of other agents, but they are still unaware of important game events or environmental conditions. This paper presents an agent design we have developed, which combines cellular automata for environmental modeling with influence maps for agent decision-making. The agents were implemented into a 3D game environment we have developed, the EmerGEnT system, and tuned through three experiments. The result is simple, flexible game agents that are able to respond to natural phenomena (e.g. rain or fire), while pursuing a goal.
Resumo:
This paper presented a novel approach to develop car following models using reactive agent techniques for mapping perceptions to actions. The results showed that the model outperformed the Gipps and Psychophysical family of car following models. The standing of this work is highlighted by its acceptance and publication in the proceedings of the International IEEE Conference on Intelligent Transportation Systems (ITS), which is now recognised as the premier international conference on ITS. The paper acceptance rate to this conference was 67 percent. The standing of this paper is also evidenced by its listing in international databases like Ei Inspec and IEEE Xplore. The paper is also listed in Google Scholar. Dr Dia co-authored this paper with his PhD student Sakda Panwai.
Resumo:
During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowires were commonly observed in the bottom region of nanowires. Through detailed structural analysis by electron microscopy, we have determined the growth mechanism of truncated triangular GaAs nanowires.