Growth mechanism of truncated triangular GaAs nanowires
| Contribuinte(s) |
C. Jagadish M. Lu |
|---|---|
| Data(s) |
01/01/2006
|
| Resumo |
During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowires were commonly observed in the bottom region of nanowires. Through detailed structural analysis by electron microscopy, we have determined the growth mechanism of truncated triangular GaAs nanowires. |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
IEEE |
| Palavras-Chave | #Nanowire #GaAs #Tem #Sem #Lateral growth #Metalorganic chemical vapor deposition #E1 #291804 Nanotechnology #240202 Condensed Matter Physics - Structural Properties #291499 Materials Engineering not elsewhere classified #780102 Physical sciences #680399 Other #671699 Manufactured products not elsewhere classified |
| Tipo |
Conference Paper |
