AN INJECTOR AMPLIFIER DOUBLE TARGET CONFIGURATION FOR THE NE-LIKE GE X-RAY LASER SCHEME

The XUV lasing output from one germanium slab target has been efficiently coupled into, and further amplified in, a second plasma produced by irradiation of a similar target from the opposite direction. The operation of such a double target was shown to be strongly dependent on the distance by which the two target surfaces were displaced. The line brightness peaked for a surface displacement of approximately 200-mu-m and it was observed that the pointing direction of one output beam could be controlled by the surface separation in an asymmetric geometry. Gain length products of approximately 16 with estimated output powers close to the megawatt level were achieved on both the 23.2 and 23.6 nm J=2-1 transitions for an optimised target configuration. Maximum effective coupling efficiencies of the individual outputs from double targets, comprising 2.2 and 1.4 cm length components, approached 100% for beams propagating from the shorter to the longer target.

A Dynamic Buffer Management Scheme for End-to-End QoS Enhancement of Multi-flow Services in HSDPA

End-user multi-flow services support is a crucial aspect of current and next generation mobile networks. This paper presents a dynamic buffer management strategy for HSDPA end-user multi-flow traffic with aggregated real-time and non-real-time flows. The scheme incorporates dynamic priority switching between the flows for transmission on the HSDPA radio channel. The end-to-end performance of the proposed strategy is investigated with an end-user multi-flow session of simultaneous VoIP and TCP-based downlink traffic using detailed HSDPA system-level simulations. Compared to an equivalent static buffer management scheme, the results show that end-to-end throughput performance gains in the non-real-time flow and better HSDPA channel utilization is attainable without compromising the real-time VoIP flow QoS constraints

Optical quantum memory for polarization qubits with V-type three-level atoms

We investigate an optical quantum memory scheme with V-type three-level atoms based on the controlled reversible inhomogeneous broadening (CRIB) technique. We theoretically show the possibility to store and retrieve a weak light pulse interacting with the two optical transitions of the system. This scheme implements a quantum memory for a polarization qubit - a single photon in an arbitrary polarization state - without the need of two spatially separated two-level media, thus offering the advantage of experimental compactness overcoming the limitations due to mismatching and unequal efficiencies that can arise in spatially separated memories. The effects of a relative phase change between the atomic levels, as well as of phase noise due to, for example, the presence of spurious electric and magnetic fields are analyzed.

System level DSP synthesis using voltage overscaling, unequal error protection & adaptive quality tuning

In this paper, we propose a system level design approach considering voltage over-scaling (VOS) that achieves error resiliency using unequal error protection of different computation elements, while incurring minor quality degradation. Depending on user specifications and severity of process variations/channel noise, the degree of VOS in each block of the system is adaptively tuned to ensure minimum system power while providing "just-the-right" amount of quality and robustness. This is achieved, by taking into consideration system level interactions and ensuring that under any change of operating conditions only the "lesscrucial" computations, that contribute less to block/system output quality, are affected. The design methodology applied to a DCT/IDCT system shows large power benefits (up to 69%) at reasonable image quality while tolerating errors induced by varying operating conditions (VOS, process variations, channel noise). Interestingly, the proposed IDCT scheme conceals channel noise at scaled voltages. ©2009 IEEE.

Multi-Level Wordline Driver for Low Power SRAMs in Nano-Scale CMOS Technology

In this paper, a multi-level wordline driver scheme is presented to improve SRAM read and write stability while lowering power consumption during hold operation. The proposed circuit applies a shaped wordline voltage pulse during read mode and a boosted wordline pulse during write mode. During read, the applied shaped pulse is tuned at nominal voltage for short period of time, whereas for the remaining access time, the wordline voltage is reduced to a lower level. This pulse results in improved read noise margin without any degradation in access time which is explained by examining the dynamic and nonlinear behavior of the SRAM cell. Furthermore, during hold mode, the wordline voltage starts from a negative value and reaches zero voltage, resulting in a lower leakage current compared to conventional SRAM. Our simulations using TSMC 65nm process show that the proposed wordline driver results in 2X improvement in static read noise margin while the write margin is improved by 3X. In addition, the total leakage of the proposed SRAM is reduced by 10% while the total power is improved by 12% in the worst case scenario of a single SRAM cell. The total area penalty is 10% for a 128Kb standard SRAM array.

Multi-level wordline driver for robust SRAM design in nano-scale CMOS technology

In this paper, a multi-level wordline driver scheme is presented to improve 6T-SRAM read and write stability. The proposed wordline driver generates a shaped pulse during the read mode and a boosted wordline during the write mode. During read, the shaped pulse is tuned at nominal voltage for a short period of time, whereas for the remaining access time, the wordline voltage is reduced to save the power consumption of the cell. This shaped wordline pulse results in improved read noise margin without any degradation in access time for small wordline load. The improvement is explained by examining the dynamic and nonlinear behavior of the SRAM cell. Furthermore, during the hold mode, for a short time (depending on the size of boosting capacitance), wordline voltage becomes negative and charges up to zero after a specific time that results in a lower leakage current compared to conventional SRAM. The proposed technique results in at least 2× improvement in read noise margin while it improves write margin by 3× for lower supply voltages than 0.7 V. The leakage power for the proposed SRAM is reduced by 2% while the total power is improved by 3% in the worst case scenario for an SRAM array. The main advantage of the proposed wordline driver is the improvement of dynamic noise margin with less than 2.5% penalty in area. TSMC 65 nm technology models are used for simulations.

Constrained Multi-Objective Aerofoil Design Using a Multi-Level Optimisation Strategy

A novel approach for the multi-objective design optimisation of aerofoil profiles is presented. The proposed method aims to exploit the relative strengths of global and local optimisation algorithms, whilst using surrogate models to limit the number of computationally expensive CFD simulations required. The local search stage utilises a re-parameterisation scheme that increases the flexibility of the geometry description by iteratively increasing the number of design variables, enabling superior designs to be generated with minimal user intervention. Capability of the algorithm is demonstrated via the conceptual design of aerofoil sections for use on a lightweight laminar flow business jet. The design case is formulated to account for take-off performance while reducing sensitivity to leading edge contamination. The algorithm successfully manipulates boundary layer transition location to provide a potential set of aerofoils that represent the trade-offs between drag at cruise and climb conditions in the presence of a challenging constraint set. Variations in the underlying flow physics between Pareto-optimal aerofoils are examined to aid understanding of the mechanisms that drive the trade-offs in objective functions.

Design of an OFDM Physical Layer Encryption Scheme

This paper presents a new encryption scheme implemented at the physical layer of wireless networks employing orthogonal frequency-division multiplexing (OFDM). The new scheme obfuscates the subcarriers by randomly reserving several subcarriers for dummy data and resequences the training symbol by a new secure sequence. Subcarrier obfuscation renders the OFDM transmission more secure and random, while training symbol resequencing protects the entire physical layer packet, but does not affect the normal functions of synchronization and channel estimation of legitimate users while preventing eavesdroppers from performing these functions. The security analysis shows the system is robust to various attacks by analyzing the search space using an exhaustive key search. Our scheme is shown to have a better performance in terms of search space, key rate and complexity in comparison with other OFDM physical layer encryption schemes. The scheme offers options for users to customize the security level and key rate according to the hardware resource. Its low complexity nature also makes the scheme suitable for resource limited devices. Details of practical design considerations are highlighted by applying the approach to an IEEE 802.11 OFDM system case study.