Ultrastructure of head organs (anterior adhesive apparatus) and posterior secretory systems of Caballeria liewi Lim, 1995 (Monogenea, Ancyrocephalidae)

Caballeria liewi Lim, 1995, uses adhesive secretions from the head organs and posterior secretory systems to assist in locomotion and attachment. Ultrastructural investigations show that the head organs of C. liewi consist of three pairs of antero-lateral pit-like openings bearing microvilli and ducts leading from two types of uninucleated gland cells (located lateral to the pharynx), one type producing rod-like (S1) bodies with an electron-dense matrix containing less electron-dense vesicles and the second type producing oval (S2) bodies with a homogeneous electron-dense matrix. Interlinking band-like structures are observed between S1 bodies and between S2 bodies. S1 body is synthesised in the granular endoplasmic reticulum, transported to a Golgi complex to be packaged into vesicles and routed into ducts for exudation. The synthesis of the S2 body is unresolved. Haptoral secretions manifested externally as net-like structures are derived from dual electron-dense (DED) secretory body produced in the peduncular gland cells. The DED body consists of a less electron-dense oval core in a homogeneous electron-dense matrix. On exocytosis into the pyriform haptoral reservoir, DED bodies are transformed into a secretion with two types of inclusions (less electron-dense oval and electron-dense spherical inclusions) in an electron-dense matrix. The secretions are further transformed (as small, oval, electron-dense bodies) when transported to the superficial anchor grooves, and on exudation into the gill tissues, the secretions become an electron-dense matrix. Secretory bodies associated with uniciliated structures, anchor sleeves and marginal hooks are also observed.

Parameter sensitivity for optimal design of 65 nm node SOI transistors

Mixed-mode simulation, where device simulation is embedded directly within a circuit simulator, is used for the first time to provide scaling guidelines to achieve optimal digital circuit performance for double gate SOI MOSFETs. This significant advance overcomes the lack of availability of SPICE model parameters. The sensitivity of the gate delay and on-off current ratio to each of the key geometric and technological parameters of the transistor is quantified. The impact of the source-drain doping profile on circuit performance is comprehensively investigated.

Necrospermia and chronic spinal cord injury.

OBJECTIVE: To determine whether improvement in quality of semen over 4 consecutive days of electroejaculation in men with chronic spinal cord injury (SCI) was consistent with epididymal necrospermia. DESIGN: Prospective study of a random sample of men with SCI. SETTING: A southeastern Australian SCI management center in collaboration with the specialist andrology service of a university-based department of obstetrics and gynecology in a tertiary referral hospital. PATIENT(S): Nine men with chronic spinal cord injury. INTERVENTION(S): Semen samples were obtained by using electroejaculation, and testicular biopsy samples were obtained by using fine-needle tissue aspiration. MAIN OUTCOME MEASURE(S): Semen analysis was performed according to World Health Organization criteria. Testicular biopsy and electron microscopy were done by using standard techniques. RESULT(S): During up to 4 days of consecutive-day electroejaculation, sperm motility and viability in semen obtained from men with chronic SCI increased by an average of 23% on days 2 and 3. The severity of the degenerative changes and the numbers of spermatozoa affected on day 1 became less marked by day 4. The changes were not present in late spermatids obtained from testicular biopsies. CONCLUSION(S): The asthenospermia of chronic SCI is similar to epididymal necrospermia and can be improved by consecutive-day electroejaculation.

Severe Vitamin E deficiency modulates airway allergic inflammatory responses in the murine asthma model

Allergic asthma is a complex immunologically mediated disease associated with increased oxidative stress and altered antioxidant defenses. It was hypothesized that a-tocopherol (a-T) decreases oxidative stress and therefore its absence may influence allergic inflammatory process, a pathobiology known to be accompanied by oxidative stress. Therefore, selected parameters of allergic asthma sensitization and inflammation were evaluated following ovalbumin sensitization and re-challenge of a-T transfer protein (TTP) knock-out mice (TTP-/-) that have greatly reduced lung a-T levels (e.g.

Scaling issues for analogue circuits using Double Gate SOI transistors

This work presents a systematic analysis on the impact of source-drain engineering using gate

The impact of the intrinsic and extrinsic resistances of double gate SOI on RF performance

In this paper, the analogue performance of a 65 nm node double gate Sol (DGSOI) is qualitatively investigated using MixedMode simulation. The intrinsic resistance of the device is optimised by evaluating the impact of the source/drain engineering using variation of spacers and doping profile on the RF key figures of merit such as f(T), and f(MAX). It is evident that longer spacers, which approach the length of the gate offer better RF performance irrespective of the profile as long as the doping gradient at the gate edge is <7 nm/decade. Analytical expressions, which reflect the dependence of f(T), and fMAX on extrinsic source, drain and gate resistances R-S, R-D and R-G have been derived. While R-D and R-S have equal effect on f(T), R-D appears to be more influential than R-S in reducing f(MAX). The sensitivity of f(MAX) to R-S and R-D. has been shown to be greater than to R-G. (c) 2006 Elsevier Ltd. All rights reserved.

Analog performance of double gate SOI transistors

Double gate fully depleted silicon-on-insulator (DGSOI) is recognized as a possible solution when the physical gate length L-G reduces to 25nm for the 65nm node on the ITRS CMOS roadmap. In this paper, scaling guidelines are introduced to optimally design a nanoscale DGSOI. For this reason, the sensitivity of gain, f(T) and f(max) to each of the key geometric and technological parameters of the DGSOI are assessed and quantified using MixedMode simulation. The impact of the parasitic resistance and capacitance on analog device performance is systematically analysed. By comparing analog performance with a single gate (SG), it has been found that intrinsic gain in DGSOI is 4 times higher but its fT was found to be comparable to that of SGSOI at different regions of transistor operation. However, the extracted fmax in SG SOI was higher (similar to 40%) compared to DGSOI due to its lower capacitance.