Tailoring the nonlinear frequency coupling between odd harmonics for the optimisation of charged particle dynamics in capacitively coupled oxygen plasmas

The influence of nonlinear frequency coupling in an oxygen plasma excited by two odd harmonics at moderate pressure is investigated using a numerical model. Through variations in the voltage ratio and phase shift between the frequency components changes in ionization dynamics and sheath voltages are demonstrated. Furthermore, a regime in which the voltage drop across the plasma sheath is minimised is identified. This regime provides a significantly higher ion flux than a single frequency discharge driven by the lower of the two frequencies alone. These operating parameters have potential to be exploited for plasma processes requiring low ion bombardment energies but high ion fluxes. 

A developed stage of Alfven wave phase mixing

Alfven wave phase mixing is an extensively studied mechanism for dissipating wave energy in an inhomogeneous medium. It is common in the vast majority of phase mixing papers to assume that even though short scale lengths and steep gradients develop as a result of phase mixing, nonlinear wave coupling does not occur. However, weakly nonlinear studies have shown that phase mixing generates magnetoacoustic modes. Numerical results are presented which show the nonlinear generation of magnetosonic waves by Alfven wave phase mixing. The efficiency of the effect is determined by the wave amplitude, the frequency of the Alfven waves and the gradient in the background Alfven speed. Weakly nonlinear theory has shown that the amplitude of the fast magnetosonic wave grows linearly in time. The simulations presented in this paper extend this result to later times and show saturation of the fast magnetosonic component at amplitudes much lower than that of the Alfven wave. For the case when Alfven waves are driven at the boundary, simulating photospheric footpoint motion, a clear modulation of the saturated amplitude is observed. All the results in this paper are for a low amplitude (less than or equal to 0.1), single frequency Alfven wave and a uniform background magnetic field in a two dimensional domain. For this simplified geometry, and with a monochromatic driver, we concluded that the nonlinear generation of fast modes has little effect on classical phase mixing.

Saturated output of a Ge XXIII x-ray laser at 19.6 nm

We report on measurements of the saturated single frequency output of a Ge XXIII x-ray laser on the J=0-->1 transition at 19.6 nm from a refraction compensating double target driven by 150 J of energy from 75-ps Nd-glass laser pulses. The 19.6-nm line completely dominated the laser output. The output energy was measured to be 0.9 mJ in a beam of 6.6x30 mrad(2) divergence, corresponding to a conversion efficiency of 6 x 10(-6).

Energy Optimization of Memory Intensive Parallel Workloads

Energy consumption is an important concern in modern multicore processors. The energy consumed by a multicore processor during the execution of an application can be minimized by tuning the hardware state utilizing knobs such as frequency, voltage etc. The existing theoretical work on energy minimization using Global DVFS (Dynamic Voltage and Frequency Scaling), despite being thorough, ignores the time and the energy consumed by the CPU on memory accesses and the dynamic energy consumed by the idle cores. This article presents an analytical energy-performance model for parallel workloads that accounts for the time and the energy consumed by the CPU chip on memory accesses in addition to the time and energy consumed by the CPU on CPU instructions. In addition, the model we present also accounts for the dynamic energy consumed by the idle cores. The existing work on global DVFS for parallel workloads shows that using a single frequency for the entire duration of a parallel application is not energy optimal and that varying the frequency according to the changes in the parallelism of the workload can save energy. We present an analytical framework around our energy-performance model to predict the operating frequencies (that depend upon the amount of parallelism) for global DVFS that minimize the overall CPU energy consumption. We show how the optimal frequencies in our model differ from the optimal frequencies in a model that does not account for memory accesses. We further show how the memory intensity of an application affects the optimal frequencies.

Impact of gate-source/drain channel architecture on the performance of an operational transconductance amplifier (OTA)

In this work, we report on the significance of gate-source/drain extension region (also known as underlap design) optimization in double gate (DG) FETs to improve the performance of an operational transconductance amplifier (OTA). It is demonstrated that high values of intrinsic voltage gain (A(VO_OTA)) > 55 dB and unity gain frequency (f(T_OTA)) similar to 57 GHz in a folded cascode OTA can be achieved with gate-underlap channel design in 60 nm DG MOSFETs. These values correspond to 15 dB improvement in A(VO_OTA) and three fold enhancement in f(T_OTA) over a conventional non-underlap design. OTA performance based on underlap single gate SOI MOSFETs realized in ultra-thin body (UTB) and ultra-thin body BOX (UTBB) technologies is also evaluated. A(VO_OTA) values exhibited by a DG MOSFET-based OTA are 1.3-1.6 times higher as compared to a conventional UTB/UTBB single gate OTA. f(T_OTA) values for DG OTA are 10 GHz higher for UTB OTAs whereas a twofold improvement is observed with respect to UTBB OTAs. The simultaneous improvement in A(VO_OTA) and f(T_OTA) highlights the usefulness of underlap channel architecture in improving gain-bandwidth trade-off in analog circuit design. Underlap channel OTAs demonstrate high degree of tolerance to misalignment/oversize between front and back gates without compromising the performance, thus relaxing crucial process/technology-dependent parameters to achieve 'idealized' DG MOSFETs. Results show that underlap OTAs designed with a spacer-to-straggle (s/sigma) ratio of 3.2 and operated below a bias current (IBIAS) of 80 mu A demonstrate optimum performance. The present work provides new opportunities for realizing future ultra-wide band OTA design with underlap DG MOSFETs.

Low-complexity iterative method of equalization for single carrier with cyclic prefix in doubly selective channels

Orthogonal frequency division multiplexing (OFDM) requires an expensive linear amplifier at the transmitter due to its high peak-to-average power ratio (PAPR). Single carrier with cyclic prefix (SC-CP) is a closely related transmission scheme that possesses most of the benefits of OFDM but does not have the PAPR problem. Although in a multipath environment, SC-CP is very robust to frequency-selective fading, it is sensitive to the time-selective fading characteristics of the wireless channel that disturbs the orthogonality of the channel matrix (CM) and increases the computational complexity of the receiver. In this paper, we propose a time-domain low-complexity iterative algorithm to compensate for the effects of time selectivity of the channel that exploits the sparsity present in the channel convolution matrix. Simulation results show the superior performance of the proposed algorithm over the standard linear minimum mean-square error (L-MMSE) equalizer for SC-CP.

Transmission-Line Class-E Power Amplifier With Extended Maximum Operating Frequency

A novel Class-E power amplifier (PA) topology with transmission-line load network is presented in this brief. When compared with the classic Class-E topology, the new circuit can increase the maximum operating frequency up to 50% higher without trading the other Class-E figures of merit. Neither quarterwave line/massive radio-frequency choke for collector/drain biasing nor additional fundamental-frequency output matching circuit are needed in the proposed PA, thus resulting in a compact design. Closed-form formulations are derived and verified by simulations with practical design limitations carefully taken into consideration and good agreement achieved.

Amplitude-modulation characteristics of power-combining Class-E amplifier with finite choke

Power back-off performances of a new variant power-combining Class-E amplifier under different amplitude-modulation schemes such as continuous wave (CW), envelope elimination and restoration (EER), envelope tracking (ET) and outphasing are for the first time investigated in this study. Finite DC-feed inductances rather than massive RF chokes as used in the classic single-ended Class-E power amplifier (PA) resulted from the approximate yet effective frequency-domain circuit analysis provide the wherewithal to increase modulation bandwidth up to 80% higher than the classic single-ended Class-E PA. This increased modulation bandwidth is required for the linearity improvement in the EER/ET transmitters. The modified output load network of the power-combining Class-E amplifier adopting three-harmonic terminations technique relaxes the design specifications for the additional filtering block typically required at the output stage of the transmitter chain. Qualitative agreements between simulation and measurement results for all four schemes were achieved where the ET technique was proven superior to the other schemes. When the PA is used within the ET scheme, an increase of average drain efficiency of as high as 40% with respect to the CW excitation was obtained for a multi-carrier input signal with 12 dB peak-to-average power ratio. © 2011 The Institution of Engineering and Technology.

Pulse shape measurements using single shot-frequency resolved optical gating for high energy (80 J) short pulse (600 fs) laser

Relevant to laser based electron/ion accelerations, a single shot second harmonic generation frequency resolved optical gating (FROG) system has been developed to characterize laser pulses (80 J, ∼600 fs) incident on and transmitted through nanofoil targets, employing relay imaging, spatial filter, and partially coated glass substrates to reduce spatial nonuniformity and B-integral. The device can be completely aligned without using a pulsed laser source. Variations of incident pulse shape were measured from durations of 613 fs (nearly symmetric shape) to 571 fs (asymmetric shape with pre- or postpulse). The FROG measurements are consistent with independent spectral and autocorrelation measurements. © 2010 American Institute of Physics.

A 75-81 GHz, 14.3 dBm Peak Output Power, 21 dB Peak Gain, SiGe Power-Combining Amplifier Operating from a Single 3.3 V Supply

A compact differential 4-way power combiner with 2.3 dB loss and high common-mode rejection characteristic for use in mm-wave PAs is presented. A complete circuit comprised of a power splitter, two-stage cascode PA array, and a power combiner was implemented in SiGe technology. Measured small-signal gain of at least 17 dB was obtained from 74.5 GHz to 80.5 GHz with a peak 21 dB at 79 GHz. The prototype delivered 13.2 dBm P1dB and 14.3 dBm Psat when operated from a single 3.3 V supply at 75 GHz.

Idealized Operation of Third-Harmonic-Peaking Class-Ef Power Amplifier with Extended Maximum Operating Frequency

A new variant of Class-EF power amplifier (PA), the so-called third-harmonic-peaking Class-EF, is presented. It inherits a soft-switching operation from the Class-E PA and a low peak switch voltage from the Class-F PA. More importantly, the new topology allows operations at higher frequencies and permits deployment of large transistors which is normally prohibited since they are always accompanied with high output capacitances. Using a simple transmission-line load network, the PA is synthesized to satisfy Class-EF impedances at fundamental frequency, third harmonic, and all even harmonics as well as to simultaneously provide an impedance matching to 50-Ω load.

Synapsin- and actin-dependent frequency enhancement in mouse hippocampal mossy fiber synapses

The synapsin proteins have different roles in excitatory and inhibitory synaptic terminals. We demonstrate a differential role between types of excitatory terminals. Structural and functional aspects of the hippocampal mossy fiber (MF) synapses were studied in wild-type (WT) mice and in synapsin double-knockout mice (DKO). A severe reduction in the number of synaptic vesicles situated more than 100 nm away from the presynaptic membrane active zone was found in the synapsin DKO animals. The ultrastructural level gave concomitant reduction in F-actin immunoreactivity observed at the periactive endocytic zone of the MF terminals. Frequency facilitation was normal in synapsin DKO mice at low firing rates (approximately 0.1 Hz) but was impaired at firing rates within the physiological range (approximately 2 Hz). Synapses made by associational/commissural fibers showed comparatively small frequency facilitation at the same frequencies. Synapsin-dependent facilitation in MF synapses of WT mice was attenuated by blocking F-actin polymerization with cytochalasin B in hippocampal slices. Synapsin III, selectively seen in MF synapses, is enriched specifically in the area adjacent to the synaptic cleft. This may underlie the ability of synapsin III to promote synaptic depression, contributing to the reduced frequency facilitation observed in the absence of synapsins I and II.