Effect of post-weld-annealing on the tensile deformation characteristics of laser-welded NiTi thin foil

Laser welding is an important process for fabricating complex components involving NiTi shape memory
alloy. As welding is a thermal process, the amount of heat input and the rate of cooling have significant
impact on the microstructure and hence the resultant characteristics of NiTi. In this study, the effect of
laser welding and post-weld-annealing from 573 K to 1173 K on the thermal phase transformation behaviors,
tensile deformation and micro-hardness characteristics of the laser-welded NiTi thin foils were investigated.
It was found that the as-welded sample exhibited inferior super-elasticity compared to the base
material, and the super-elasticity could be partially restored by annealing at 573 K. On the other hand,
annealing of the weldment above the recrystallization temperature would lower the super-elasticity.

Relationship between microstructure and deformation behaviour during dynamic compression in Ti-3Al-5Mo-5V alloy

The relationship between microstructure and deformation and damage behaviour during dynamic compression in Ti-3Al-5Mo-5V alloy has been studied using several experimental techniques, including optical microscopy, scanning electron microscopy and microhardness measurements. It was found that the deformation behaviour during dynamic compression was closely related to deformation parameters. After dynamic deformation, the deformation shear band that formed in the titanium alloy had microhardness similar to that of the matrix. However, the microhardness of the white shear band was much higher than the matrix microhardness. The effects of deformation parameters, including deformation rate and deformation degree, on deformation localisation were investigated. Based on the results from the present work, the microstructure and deformation processing parameters can be optimised. In addition, treatment methods after dynamic compression were explored to restore alloy properties. Using post-deformation heat treatment, the microstructure and property inhomogeneity caused by shear bands could be largely removed.

Creation of damage-free ferroelectric nanocapacitors via focused ion beam milling

We present a novel method for creating damage-free ferroelectric nanostructures with a focused ion beam milling machine. Using a standard e-beam photoresist followed by a dilute acid wash, nanostructures ranging in size from 1 mu m down to 250 nm were created in a 90 nm thick lead zirconate titanate ( PZT) wafer. Transmission electron microscopy and piezoresponse force microscopy ( PFM) confirmed that the surfaces of the nanostructures remained damage free during fabrication, and showed no gallium implantation, and that there was no degradation of ferroelectric properties. In fact DC strain loops, obtained using PFM, demonstrated that the nanostructures have a higher piezoresponse than unmilled films. As the samples did not have any top hard mask, the method presented is unique as it allows for imaging of the top surface to understand edge effects in well-defined nanostructures. In addition, as no post-mill annealing was necessary, it facilitates investigation of nanoscale domain mechanisms without process-induced artefacts.

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates

Hafnium oxide films have been deposited at 250 °C on silicon and germanium substrates by atomic layer deposition (ALD), using tetrakis-ethylmethylamino hafnium (TEMAH) and water vapour as precursors in a modified Oxford Instruments PECVD system. Self-limiting monolayer growth has been verified, characterised by a growth rate of 0.082 nm/ cycle. Layer uniformity is approximately within ±1% of the mean value. MOS capacitors have been fabricated by evaporating aluminium electrodes. CV analysis has been used to determine the bulk and interface properties of the HfO 2, and their dependence on pre-clean schedule, deposition conditions and post-deposition annealing. The dielectric constant of the HfO 2 is typically 18. On silicon, best results are obtained when the HfO 2 is deposited on a chemically oxidised hydrophilic surface. On germanium, best results are obtained when the substrate is nitrided before HfO 2 deposition, using an in-situ nitrogen plasma treatment. © Springer Science+Business Media, LLC 2007.

Germanium on Sapphire By Wafer Bonding

This paper describes the creation of a germanium on sapphire platform, via wafer bonding technology, for system-on-a-chip applications. Similar thermal coefficients of expansion between germanium (5.8 x 10-6 K-1) and sapphire (5 x 10-6 K-1) make the bonding of germanium to sapphire a reality. Germanium directly bonded to sapphire results in microvoid generation during post bond annealing. Inclusion of an interface layer such as silicon dioxide layer by plasma enhanced chemical vapour deposition, prior to bonding, results in a microvoid free bond interface after annealing. Grinding and polishing of the subsequent germanium layer has been achieved leaving a thick germanium on sapphire (GeOS) substrate. Submicron GeOS layers have also been achieved with hydrogen/helium co-implantation and layer transfer. Circular geometry transistors exhibiting a field effect mobility of 890 cm2/V s have been fabricated onto the thick germanium on sapphire layer.

Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications

Raman and spreading resistance profiling have been used to analyze defects in germanium caused by hydrogen and helium implants, of typical fluences used in layer transfer applications. Beveling has been used to facilitate probing beyond the laser penetration depth. Results of Raman mapping along the projection area reveal that after post-implant annealing at 400°C, some crystal damage remains, while at 600°C, the crystal damage has been repaired. Helium implants create acceptor states beyond the projected range, and for both hydrogen and helium, 1×1016 acceptors/cm2 remain after 600°C. These are thought to be vacancy-related point defect clusters.

Growth of SrS thin films by pulsed-laser deposition

High-quality luminescent thin films of strontium sulphide (SrS) with excellent stoichiometry have been grown by pulsed-laser deposition. The crystallinity, stoichiometry and cathodoluminescence (CL) have been investigated for the films deposited onto two differently coated glass substrates. Furthermore the importance of post-deposition annealing has been studied. SrS thin films grown at 450 degrees C onto glass substrates coated with tin-doped indium oxide show good crystallinity, with a preferred orientation along the (200) axis. Cerium-doped SrS (SrS:Ce) gives a strong blue CL output at 400 nm. Energy-dispersive X-ray spectroscopy shows that the films are stoichiometric and that the stoichiometry is controllable by varying deposition parameters.

Effect of postweld heat treatment on the microstructure and cyclic deformation behavior of laser-welded NiTi-shape memory wires

NiTi wires of 0.5 mm diameter were laser welded using a CW 100-W fiber laser in an argon shielding environment with or without postweld heat-treatment (PWHT). The microstructure and the phases present were studied by scanning-electron microscopy (SEM), transmission-electron microscopy (TEM), and X-ray diffractometry (XRD). The phase transformation behavior and the cyclic stress–strain behavior of the NiTi weldments were studied using differential scanning calorimetry (DSC) and cyclic tensile testing. TEM and XRD analyses reveal the presence of Ni4Ti3 particles after PWHT at or above 623 K (350 °C). In the cyclic tensile test, PWHT at 623 K (350 °C) improves the cyclic deformation behavior of the weldment by reducing the accumulated residual strain, whereas PWHT at 723 K (450 °C) provides no benefit to the cyclic deformation behavior. Welding also reduces the tensile strength and fracture elongation of NiTi wires, but the deterioration could be alleviated by PWHT.

Evaluation of Cyclic Deformation Behavior of Laser-welded Shape Memory NiTi Alloys at Different Working Temperatures

Post-weld heat-treatment (PWHT) has been established as one of the cost-effective ways to improve the functional properties, namely shape memory and super-elastic effects (SME and SE), of laser-welded NiTi alloys. However, the functional performance of the laser-welded joint at different working temperatures has not been explored yet. The purpose of this study is to investigate the effect of different working temperatures on the functional properties of the laser-welded NiTi alloys before and after PWHT by applying cyclic deformation tests. Two laser-welded samples: as-welded and heat-treated sample (after PWHT at 350 oC or 623 K) were tested in this work at room temperature, 50 oC (or 323 K) and 75 oC (or 348 K) respectively. The samples were cyclically loaded and unloaded for 10 cycles up to 4 % strain. The critical stress to induce the martensitic transformation and the residual strain after the cyclic tests were recorded. The results indicate that the heat-treated sample exhibited better functional properties than the as-welded sample at room temperature and 50 oC (or 323 K). However, both the as-welded and heat-treated samples failed in the cyclic tests at 75 oC (or 348 K). These findings are important to determine the feasible working temperature range for the laser-welded NiTi components to exhibit desirable functional properties in engineering applications involving cyclic loading.

Effect of Post-weld Heat-treatment on the Stress Corrosion Cracking Behaviour of Laser-welded Shape Memory NiTi Wires in Hanks’ Solution

In this study, the stress-corrosion cracking (SCC) behaviour of laser-welded NiTi wires before and after post-weld heat-treatment (PWHT) was investigated. The samples were subjected to slow strain rate testing (SSRT) under tensile loading in Hanks’ solution at 37.5 °C (or 310.5 K) at a constant anodic potential (200 mVSCE). The current density of the samples during the SSRT was captured by a potentiostat, and used as an indicator to determine the susceptibility to SCC. Fractography was analyzed using scanning-electron microscopy (SEM). The experimental results showed that the laser-welded sample after PWHT was immune to the SCC as evidenced by the stable current density throughout the SSRT. This is attributed to the precipitation of fine and coherent nano-sized Ni4Ti3 precipitates in the welded regions (weld zone, WZ and heat-affected zone, HAZ) after PWHT, resulting in (i) enrichment of TiO2 content in the passive film and (ii) higher resistance against the local plastic deformation in the welded regions.