LPCVD of tungsten by selective deposition on silicon

Beta-phase W, selectively grown at 440C had resistivity 20 micro-ohm cm and maximum layer thickness 100nm. Hydrogen passivation proved essential in this process. Higher deposition temperatures resulted in increased layer thickness but incorporated WSi2 and alpha- phase W. Self limiting W grown on polycrystalline and heavily doped silicon yielded reduced thickness. Boron is involved in the WF6 reduction reaction but phosphorus is not and becomes incorporated in the W layer. The paper establishes an optimised and novel CVD process suited to IC contact technology. A funded technology transfer contract with National Semiconductor Greenock (M Fallon) resulted from this work.

Novel comparison of kinetic models for the adsorption-coupled reduction of Cr(VI) using untreated date pit biomaterial

Biosorption of Cr(VI) onto date pit biomass has been investigated via kinetic studies as functions of initial Cr(VI) concentration, solution temperature and date pit particle size. Kinetic experiments indicated that chromate ions accumulate onto the date pits and then reduce to less toxic Cr(III) compounds. The López-García, Escudero and Park Cr(VI) biosorption kinetic models, which take into consideration the direct reduction, the passivation process and the follow-on decrease of the active surface area of reaction, were applied to the kinetic data. The models represented the experimental data accurately at low Cr(VI) concentration (0.480 mM) and small particle size (0.11–0.22 mm) at which the Cr(VI) was completely removed from the aqueous solution and completely reduced to Cr(III) after 420 min. Date pit biomass thus offers a green chemical process for the remediation of chromium from wastewater. This investigation will help researchers employ the adsorption-coupled reduction of Cr(VI) models and simplify their application to kinetic experimental data.

High temperature thermal stability studies of ultrathin Al2O3 layers deposited on native oxide and sulphur passivated InGaAs surfaces

High resolution synchrotron radiation core level photoemission measurements have been used to undertake a comparative study of the high temperature stability of ultrathin Al2O3 layers deposited by atomic layer deposition (ALD) on both sulphur passivated and native oxide covered InGaAs. The residual interfacial oxides between sulphur passivated InGaAs and the ultrathin Al2O3 layer can be substantially removed at high temperature (up to 700 °C) without impacting on the InGaAs stoichiometry while significant loss of indium was recorded at this temperature on the native oxide InGaAs surface.

High temperature thermal stability investigations of ammonium sulphide passivated InGaAs and interface formation with Al2O3 studied by synchrotron radiation based photoemission

High resolution synchrotron radiation core level photoemission measurements have been used to undertake a comparative study ofthe high temperature thermal stability ofthe ammonium sulphide passivated InGaAs surface and the same surface following the atomic layer deposition (ALD) of an ultrathin (∼1 nm) Al2O3 layer. The solution based ex situ sulphur passivation was found to be effective at removing a significant amount of the native oxides and protecting the surface against re-oxidation upon air exposure. The residual interfacial oxides which form between sulphur passivated InGaAs and the ultrathin Al2O3 layer can be substantially removed at high temperature (up to 700 ◦C) without impacting on the InGaAs stoichiometry while significant loss of indium was recorded at this temperature on the uncovered sulphur passivated InGaAs surface.