High temperature thermal stability studies of ultrathin Al2O3 layers deposited on native oxide and sulphur passivated InGaAs surfaces
Data(s) |
01/11/2015
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Resumo |
High resolution synchrotron radiation core level photoemission measurements have been used to undertake a comparative study of the high temperature stability of ultrathin Al2O3 layers deposited by atomic layer deposition (ALD) on both sulphur passivated and native oxide covered InGaAs. The residual interfacial oxides between sulphur passivated InGaAs and the ultrathin Al2O3 layer can be substantially removed at high temperature (up to 700 °C) without impacting on the InGaAs stoichiometry while significant loss of indium was recorded at this temperature on the native oxide InGaAs surface. |
Identificador | |
Idioma(s) |
eng |
Direitos |
info:eu-repo/semantics/restrictedAccess |
Fonte |
Chauhan , L , Gajula , D R , McNeill , D & Hughes , G 2015 , ' High temperature thermal stability studies of ultrathin Al2O3 layers deposited on native oxide and sulphur passivated InGaAs surfaces ' Microelectronic Engineering , vol 147 , pp. 249-253 . DOI: 10.1016/j.mee.2015.04.114 |
Palavras-Chave | #Al<inf>2</inf>O<inf>3</inf> #Annealing #Atomic layer deposition #InGaAs #Photoemission #Wet sulphur passivation #/dk/atira/pure/subjectarea/asjc/2200/2208 #Electrical and Electronic Engineering #/dk/atira/pure/subjectarea/asjc/2500/2504 #Electronic, Optical and Magnetic Materials #/dk/atira/pure/subjectarea/asjc/2500/2508 #Surfaces, Coatings and Films #/dk/atira/pure/subjectarea/asjc/3100/3107 #Atomic and Molecular Physics, and Optics #/dk/atira/pure/subjectarea/asjc/3100/3104 #Condensed Matter Physics |
Tipo |
article |