High tolerance to gate misalignment in low voltage gate-underlap double gate MOSFETs

.In this letter, we demonstrate for the first time that gate misalignment is not a critical limiting factor for low voltage operation in gate-underlap double gate (DG) devices. Our results show that underlap architecture significantly extends the tolerable limit of gate misalignment in 25 nm devices. DG MOSFETs with high degree of gate misalignment and optimal gate-underlap design can perform comparably or even better than self-aligned nonunderlap devices. Results show that spacer-to-straggle (s/sigma) ratio, a key design parameter for underlap devices, should be within the range of 2.3-3.0 to accommodate back gate misalignment. These results are very significant as the stringent process control requirements for achieving self-alignment in nanoscale planar DG MOSFETs are considerably relaxed

Design of composite stiffener run-outs for damage tolerance

A major concern in stiffener run-out regions, where the stiffener is terminated due to a cut-out, intersecting rib, or some other structural feature which interrupts the load path, is the relatively weak skin–stiffener interface in the absence of mechanical fasteners. More damage tolerant stiffener run-outs are clearly required and these are investigated in this paper. Using a parametric finite element analysis, the run-out region was optimised for stable debonding crack growth. The modified run-out, as well as a baseline configuration, were manufactured and tested. Damage initiation and propagation was investigated in detail using state-of-the-art monitoring equipment including Acoustic Emission and Digital Image Correlation. As expected, the baseline configuration failed catastrophically. The modified run-out showed improved crack-growth stability, but subsequent delamination failure in the stiffener promptly led to catastrophic failure.

Central-Tapped Node Linked Modular Fault-Tolerance Topology for SRM Applications

Electric vehicles (EVs) and hybrid electric vehicles (HEVs) can reduce greenhouse gas emissions while switched reluctance motor (SRM) is one of the promising motor for such applications. This paper presents a novel SRM fault-diagnosis and fault-tolerance operation solution. Based on the traditional asymmetric half-bridge topology for the SRM driving, the central tapped winding of the SRM in modular half-bridge configuration are introduced to provide fault-diagnosis and fault-tolerance functions, which are set idle in normal conditions. The fault diagnosis can be achieved by detecting the characteristic of the excitation and demagnetization currents. An SRM fault-tolerance operation strategy is also realized by the proposed topology, which compensates for the missing phase torque under the open-circuit fault, and reduces the unbalanced phase current under the short-circuit fault due to the uncontrolled faulty phase. Furthermore, the current sensor placement strategy is also discussed to give two placement methods for low cost or modular structure. Simulation results in MATLAB/Simulink and experiments on a 750-W SRM validate the effectiveness of the proposed strategy, which may have significant implications and improve the reliability of EVs/HEVs.