Material effects on stress-induced defect generation in trenched silicon-on-insulator structures

We have investigated the influence of the material properties of the silicon device layer on the generation of defects, and in particular slip dislocations, in trenched and refilled fusion-bonded silicon-on-insulator structures. A strong dependence of the ease of slip generation on the type of dopant species was observed, with the samples falling into three basic categories; heavily boron-doped silicon showed ready slip generation, arsenic and antimony-doped material was fairly resistant to slip, while silicon moderately or lightly doped with phosphorous or boron gave intermediate behavior. The observed behavior appears to be controlled by differences in the dislocation generation mechanism rather than by dislocation mobility. The introduction of an implanted buried layer at the bonding interface was found to result in an increase in slip generation in the silicon, again with a variation according to the dopant species. Here, the greatest slip occurred for both boron and antimony-implanted samples. The weakening of the implanted material may be related to the presence of a band of precipitates observed in the silicon near the bonding interface. (C) 2001 The Electrochemical Society.

Low temperature surface nitridation processes for dielectric-Ge interfaces

Germanium MOS capacitors have been fabricated with a high-? HfO dielectric using ALD. An in-situ low temperature (250°C) nitrogen plasma treatment on the germanium surface prior to the deposition of HfO was found to be beneficial to the electrical properties of the devices. Germanium MOS capacitors have also been fabricated with a SiO dielectric deposited by an atmospheric pressure CVD 'silox' process. The same low temperature plasma nitridation was found to degrade the electrical properties of the silox devices. The effect of a post-metal anneal in H and N on both types of capacitor structure was also found to degrade device electrical properties. copyright The Electrochemical Society.

Rapid, quantitative analysis of ppm/ppb nicotine using surface-enhanced Raman scattering from polymer-encapsulated Ag nanoparticles (gel-colls)

Rapid, quantitative SERS analysis of nicotine at ppm/ppb levels has been carried out using stable and inexpensive polymer-encapsulated Ag nanoparticles (gel-colls). The strongest nicotine band (1030 cm(-1)) was measured against d(5)-pyridine internal standard (974 cm(-1)) which was introduced during preparation of the stock gel-colls. Calibration plots of I-nic/I-pyr against the concentration of nicotine were non-linear but plotting I-nic/I-pyr against [nicotine](x) (x = 0.6-0.75, depending on the exact experimental conditions) gave linear calibrations over the range (0.1-10 ppm) with R-2 typically ca. 0.998. The RMS prediction error was found to be 0.10 ppm when the gel-colls were used for quantitative determination of unknown nicotine samples in 1-5 ppm level. The main advantages of the method are that the gel-colls constitute a highly stable and reproducible SERS medium that allows high throughput (50 sample h(-1)) measurements.

Plasma chloriding of thin-film silver - A novel process in silver-silver chloride reference electrode fabrication

Silver thin films were modified using a novel plasma modification process for the development of thin-film silver-silver chloride reference electrodes. The surface, physical, and electrochemical properties of these electrodes were investigated by atomic force microscopy, thickness and resistivity measurement techniques, as well as impedance spectroscopy and potentiometry. After plasma treatment, thin-film growth was observed and the electrodes, in general, exhibited low interface impedance and a roughened surface. Evidence of a complex surface reorganization was found. Correlating plasma conditions with film properties suggested that increasing pressure and exposure duration increased species availability, therefore governing the reaction rates, while input power appeared to influence the type of surface chemical reactions. Results also indicated that Ar/Cl-2 mixtures should be employed rather than pure chlorine plasmas. (C) 2002 The Electrochemical Society.

Influence of the anion on the electrodeposition of cobalt from imidazolium ionic liquids

Cyclic voltammetry and absorption spectrophotometry were used to examine the complex formation of cobalt (II) in the ionic liquids 1-butyl-3-methylimidazolium chloride ([C(4)mim] Cl) and 1-butyl-3-methylimidazolium bis (trifluoromethylsulfonyl) imide ([C(4)mim][Tf2N]). In [C(4)mim]Cl, cobalt(II) is complexed as [CoCl4](2-) at CoCl2 concentrations less than 33 mol %. Cyclic voltammograms show that cobalt cannot be electrodeposited at these concentrations. However, cobalt metal can be electrodeposited at CoCl2 concentrations above the threshold concentration of 33 mol %. In the ionic liquid [C(4)mim][Tf2N] there is no threshold CoCl2 concentration for electrodeposition due to the absence of [CoCl4](2-). (C) 2007 The Electrochemical Society.

Selecting Room-Temperature Ionic Liquids to Optimize Voltammetric Responses: The Oxidation of NADH

The electrochemistry of nicotinamide adenine dinucleotide (NADH) in its reduced form was examined in two room-temperature ionic liquids (RTILs): 1-ethyl-3-methylimidazolium bis-(trifluoromethylsulfonyl)imide ([C(2)mim][NTf2]) and 1-butyl-3-methylimidazolium hexafluorophos-phate ([C(4)mim][PF6]). NADH oxidation has previously been studied in aqueous solution where it follows the pathway: one-electron oxidation to the NADH(center dot+) radical cation, deprotonation to produce the neutral NAD(center dot) radical, then oxidation to the NAD(+) cation. The electrochemistry of NADH was examined in [C(2)mim][NTf2] and [C(4)mim][PF6] at the bare Pt electrode (10 mu m diameter): In [C(2)mim][NTf2], no oxidation was observed; in [C(4)mim][PF6], an oxidative signal was observed, which likely followed the pathway described above, where upon formation of the NADH(center dot+) radical cation, the [PF6](-) anion (unlike the [NTf2](-) anion) reacts with the proton to form HPF6, which decomposes. This demonstrates the tunability of RTILs, whereby the choice of one anion in an RTIL over another can promote a reaction. Poly(vinylferrocene) (PVF) was studied as a mediator for the NADH detection in both RTILs to attempt to lower the potential of NADH detection. The Pt electrode was modified with PVF, and the oxidation of PVF to PVF+ was observed in [C(2)mim][NTf2] and [C(4)mim][PF6], but no mediation of the NADH oxidation was observed.

Germanium bonding to AI2O3

Germanium has been bonded to both single crystal Al2O 3 (sapphire) as well as fine grain Al2O3. A germanium to sapphire bonding energy of 3 J/m2 has been measured after a 200 °C bond anneal. Micro voids formed between the germanium/sapphire interface can be removed by employing an interfacial layer of silicon dioxide on either surface. Patterning the sapphire into a grid pattern prior to bonding creates an escape path for trapped gas or moisture allowing micro void free direct bonding to be achieved. Modifying the surface of the fine grain Al2O3 surface with a polycrystalline silicon deposition and polish creates a surface, having an rms roughness (measured over a 250© m2 area), of 1.5nm, suitable for bonding. Techniques employed in the germanium sapphire bonding can then be used in the bonding of fine grain A12O3 to germanium. © The Electrochemical Society.

Electrical characterization of ALD Al2O3 and HfO2 films on germanium

Al2O3 and HfO2 films were deposited on germanium substrates by atomic layer deposition (ALD) and analyzed by MOS capacitor electrical characterization. In-situ plasma nitridation performed prior to ALD was found to improve the stability of the interface. For Al 2O3/GeON/Ge capacitors, a 450°C anneal in nitrogen ambient reduced hysteresis and oxide fixed charge to 90 mV and 1012 cm-2 respectively, with low leakage current density. On the contrary, degradation was observed for un-nitrided Al2O3/Ge capacitors after 300 and 400°C post-metal anneals. HfO2/GeON/Ge capacitors benefitted from a 400°C densification anneal but exhibited degradation after post-metal anneals at temperatures greater than 300°C. This degradation is attributed to the influence of Al electrodes on the HfO 2 gate stack. HfO2 is considered to be a suitable material for the gate stack and Al2O3 for the buried dielectric in a GeOI structure. ©The Electrochemical Society.

CMOS compatible RF MEMS switches with serpentine springs

This paper describes a serpentine flexure spring design and fabrication process development for radio frequency microelectromechanical (RF MEMS) capacitive switches with coplanar waveguide (CPW) lines. Sputtered tungsten is employed as the CPW line conductor instead of Au, a non-Si compatible material. The bridge membrane is fabricated from Al. The materials and fabrication process can be integrated with CMOS and SOI technology to reduce cost. Results show the MEMS switch has excellent performance with insertion loss 0.3dB, return loss -27dB at 30GHz and high isolation -30dB at 40GHz. The process developed promises to simplify the design and fabrication of RF MEMS on silicon.

Characterization of Nickel Germanide Schottky Contacts for the Fabrication of Germanium p-channel MOSFETs

Nickel germanide Schottky contacts, formed by rapid thermal annealing of thin nickel films, have been characterized on n-type germanium wafers for a range of RTA temperatures. The highest Schottky barrier heights for electrons (= 0.6-0.7 eV) were obtained for RTA temperatures of approximately 300°C. For this RTA schedule, the corresponding barrier height for holes is close to zero, ideal for Schottky contacted p-channel germanium MOSFETs. When the RTA temperature was increased to 400oC, a dramatic reduction in electron barrier height (< 0.1 eV) was observed. This RTA schedule, therefore, appears ideal for ohmic source/drain contacts to n channel germanium MOSFETs. From sheet resistance measurements and XRD characterization, nickel germanide formation was found to occur at 300oC and above. The NiGe phase was dominant for RTA temperatures up to at least 435oC.

(Invited) Germanium on Sapphire Technology

Silicon-on-sapphire (SOS) substrates have been proven to offer significant advantages in the integration of passive and active devices in RF circuits. Germanium on insulator technology is a candidate for future higher performance circuits. Thus the advantages of employing a low loss dielectric substrate other than a silicon-dioxide layer on silicon will be even greater. This paper covers the production of germanium on sapphire (GeOS) substrates by wafer bonding. The quality of the germanium back interface is studied and a tungsten self-aligned gate process MOST process has been developed. High low field mobilities of 450-500 cm2/V-s have been achieved for p-channel MOSTs produced on GeOS substrates. Thick germanium on alumina (GOAL) substrates have also been produced.

Multiple self-aligned iron nanowires by a dual selective chemical vapor deposition process

We have demonstrated a self-aligned process to fabricate organized iron nanowires on a planarized surface with wire dimensions down to 50 nm. Polishing was used to expose an alternating silicon silicon dioxide edge and a dual selective metal deposition process produced the nanowires. The initial selective deposition produced a tungsten layer on the exposed polysilicon regions. The discovery that selective chemical vapor deposition of iron from Fe(CO)(5) precursor on dielectric surfaces over tungsten surfaces is the key factor that enables the self-alignment of the iron nanowires. Dimensions of the wires are determined by the thickness of the thermal oxide. (c) 2007 The Electrochemical Society.

An investigation of Mode I fracture toughness using aligned carbon nanotube forests at the crack interface

This paper presents a novel approach for introducing aligned carbon nanotubes (CNTs) at the crack interface of pre-impregnated (prepreg) carbon fibre composite plies, creating a hierarchical (three-phase) composite structure. The aim of this approach is to improve the interlaminar fracture toughness. The developed method for transplanting the aligned CNTs from the silicon wafer onto the pre-preg material is described. Scanning electron microscopy (SEM) was used to analyse the effects of the transplantation method. Double Cantilever Beam (DCB) specimens were prepared, according to ASTM standard D5528- 01R07E03 [1] and aligned multi-walled carbon nanotubes (MWCNTs) were introduced at the crack-tip. Mode I fracture tests for pristine (control) specimens and CNT-enhanced specimens were conducted and an average increase in the critical strain energy release rate (GIc) of approximately 50 % was achieved.

Controlled chemistry of Moisture Sensitive Reagents in Ionic Liquids

Many reactions involving phosphorus reagents require highly anhydrous and inert conditions for their successful implementation. In particular, the use of PCl3 and its derivatives for synthesis is often hampered by the inherent sensitivity of the materials themselves. Ionic liquids are emerging as green alternative solvents for a range of processes, and in particular have proven to be excellent media for highly sensitive phosphorus reagents without the need for anhydrous or inert conditions. Herein, we report the use of ionic liquids as both storage and reaction media which allows difficult and sensitive chemistry to be achieved in a more accessible manner.