76 resultados para Schooling in low SES areas

em QUB Research Portal - Research Directory and Institutional Repository for Queen's University Belfast


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It has previously been reported that rice grown in regions of Bangladesh with low-arsenic (As) concentrations in irrigation water can have relatively high concentrations of As within their grains. This study aims to determine how widespread this issue is, and determine the seasonal variation in grain As in these regions. Levels of As were measured in shallow tube well (STW) water, soils, and rice grains collected during the Boro (dry) and Aman (wet) seasons from six Upazilas (sub-districts) of Bangladesh where As levels in groundwater were known to be low. In all the Upazilas, the As concentrations in STW water were <50 mu g L-1. The As levels in soil samples collected from the Upazilas ranged between 0.2-4.0 mgkg(-1) in the sam-ples collected during the Boro season, and 0.4-5.7 mg kg(-1) in the samples collected in the Aman season. Levels of As in both Boro and Aman rice grain varied widely: in Boro 0.02-0.45 mg kg(-1), and in Aman 0.01-0.29 mg kg(-1). Additionally, a household survey of dietary habits was also conducted in one Upazila by estimating As ingestion by 15 head female members. On average, the women consumed 3.1 L of water, 1.1 kg of cooked rice, and 42 g dry weight of curry per day. The total As ingestion rates ranged from 31.1-129.3 mu g day(-1) (mean 63.5 mu g kg(-1)). These findings indicate that the major route of As ingestion in low groundwater As areas of Bangladesh is rice, followed by curry and then water.

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Financial literacy can explain a significant proportion of wealth inequality. Among the key components of financial literacy are numeracy and money management skills. Our study examines the relative importance of these components in the determination of consumer debt and household net worth among credit union members in socially disadvantaged areas. The main finding from our analysis is that money management skills are important determinants of financial outcomes but that numeracy has almost no role to play. This result adds to a recent US-based behavioural finance literature on the role of attention and planning in consumer finance. Findings are found to be robust when the sample is reduced to only those who have a clear role in household financial decision-making and also when controlling for potential endogeneity. Our findings have policy implications in the UK and elsewhere as credit unions across the world are important players in national financial literacy strategies.

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The electron dynamics in the low-pressure operation regime ($«$ 5 Pa) of a neon capacitively coupled plasma is investigated using phase-resolved optical emission spectroscopy. Plasma ionization and sustainment mechanisms are governed by the expanding and contracting sheath and complex wave–particle interactions. Electrons are energized through the advancing and retreating electric field of the RF sheath. The associated interaction of energetic sheath electrons with thermal bulk plasma electrons drives a two-stream instability also dissipating power in the plasma.

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Plasma ionization in the low-pressure operation regime ( $«$ 5 Pa) of RF capacitively coupled plasmas (CCPs) is governed by a complex interplay of various mechanisms, such as field reversal, sheath expansion, and wave–particle interactions. In a previous paper, it was shown that experimental observations in a hydrogen CCP operated at 13.56 MHz are qualitatively well described in a 1-D symmetrical particle-in-cell (PIC) simulation. In this paper, a spherical asymmetrical PIC simulation that is closer to the conditions of the highly asymmetrical experimental device is used to simulate a low-pressure neon CCP operated at 2 MHz. The results show a similar behavior, with pronounced ionization through field reversal, sheath expansion, and wave–particle interactions, and can be exploited for more accurate quantitative comparisons with experimental observations.

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.In this letter, we demonstrate for the first time that gate misalignment is not a critical limiting factor for low voltage operation in gate-underlap double gate (DG) devices. Our results show that underlap architecture significantly extends the tolerable limit of gate misalignment in 25 nm devices. DG MOSFETs with high degree of gate misalignment and optimal gate-underlap design can perform comparably or even better than self-aligned nonunderlap devices. Results show that spacer-to-straggle (s/sigma) ratio, a key design parameter for underlap devices, should be within the range of 2.3-3.0 to accommodate back gate misalignment. These results are very significant as the stringent process control requirements for achieving self-alignment in nanoscale planar DG MOSFETs are considerably relaxed