Two-layer mm-wave FSS of linear slot elements with low insertion loss

The performance of a very low loss frequency selective surface (FSS) comprising two air spaced planar arrays of linear slot elements is reported. The beamsplitter generates a low loss passband response with a very sharp transmission roll-off with frequency. Simulated and measured results in the 30 GHz and 300 GHz wavebands are used to quantify the performance improvement compared to a conventional multilayer dielectrically backed conducting ring FSS. The paper also discusses the effect of the array dimensions on the passband width and filter roll-off rate.

Low Insertion Loss Substrate Integrated Waveguide Quasi–Elliptic Filters for V- Band Wireless Personal Area Network Applications

Novel V-band substrate integrated waveguide (SIW) filters have been presented. Design procedures for the filters synthesis and mechanisms providing quasi-elliptic response have been explained. The insertion loss of the filters has been measured below 2 dB with microstrip-to-SIW transitions being included.

Ultrafast Low-Loss 40-70 GHz SPST Switch

The design and characterizations of an ultrafast single-pole single-throw (SPST) absorptive differential switch are presented. The switch exhibits low insertion loss less than 1 dB, and isolation better than 16 dB from 40 to 70 GHz. Sub-nanosecond switching time is achieved by adopting a differential current-steering technique. The total measured rise and fall time are 75 ps envisaging that switching rates up to 13 Gb/s are achievable. To our best knowledge, this is the fastest, lowest insertion loss V-band SPST switch yet reported that can operate over a wide bandwidth of 30 GHz.

A 76-84 GHz SiGe power amplifier array employing low-loss four-way differential combining transformer

This paper presents holistic design of a novel four-way differential power-combining transformer for use in millimeter-wave power-amplifier (PA). The combiner with an inner radius of 25 µm exhibits a record low insertion loss of 1.25 dB at 83.5 GHz. It is designed to simultaneously act as a balanced-to-unbalanced converter, removing the need for additional BALUNs typically required in differential circuits. A complete circuit comprised of a power splitter, two-stage differential cascode PA array, a power combiner as well as input and output matching elements was designed and realized in SiGe technology with f/f 170/250 GHz. Measured small-signal gain of at least 16.8 dB was obtained from 76.4 to 85.3 GHz with a peak 19.5 dB at 83 GHz. The prototype delivered 12.5 dBm output referred 1 dB compression point and 14 dBm saturated output power when operated from a 3.2 V dc supply voltage at 78 GHz.

Morphology dependence of the dielectric properties of epitaxial BaTiO3 films and epitaxial BaTiO3/SrTiO3 multilayers

Epitaxial BaTiO3 films and epitaxial BaTiO3/SrTiO3 multilayers were grown by pulsed laser deposition on vicinal surfaces of (001)-oriented Nb-doped SrTiO3 (SrTiO3:Nb) single-crystal substrates. Atomic force microscopy was used to investigate the surface topography of the deposited films. The morphology of the films, of the BaTiO3/SrTiO3 interfaces, and of the column boundaries was investigated by cross-sectional high-resolution transmission electron microscopy. Measurements of the dielectric properties were performed by comparing BaTiO3 films and BaTiO3/SrTiO3 multilayers of different numbers of individual layers, but equal overall thickness. The dielectric loss saturates for a thickness above 300 nm and linearly decreases with decreasing film thickness below a thickness of 75 nm. At the same thickness of 75 nm, the thickness dependence of the dielectric constant also exhibits a change in the linear slope both for BaTiO3 films and BaTiO3/SrTiO3 multilayers. This behaviour is explained by the change observed in the grain morphology at a thickness of 75 nm. For the thickness dependence of the dielectric constant, two phenomenological models are considered, viz. a 'series-capacitor' model and a 'dead-layer' model.

Microstructure and dielectric properties of epitaxial BaTiO3 films and BaTiO3/SrTiO3 multilayers

Epitaxial BaTiO3 films and BaTiO3/SrTiO3 multilayers were grown by pulsed laser deposition (PLD) on (001)-oriented Nb-doped SrTiO3 (SrTiO3:Nb) substrates. Measurements of the dielectric properties were performed comparing BaTiO3 films and BaTiO3/SrTiO3 multilayers of different number of individual layers, but equal overall thickness. The dielectric loss saturates for a thickness above 300 nm, and linearly decreases with decreasing film thickness below a thickness of 75 nm, and it is independent on the number of multilayers, pointing to some interface effect. The thickness dependence of the dielectric constant of BaTiO3 films and BaTiO3/SrTiO3 multilayers; exhibits a change in the linear slope at a thickness of 75 nm. This behavior is explained by the change observed in the morphology at a thickness of 75 nm. In order to explain the thickness dependence of the dielectric constant, two approaches are considered in this paper, viz. a "series capacitor" model and a "dead layer" model.

Using dispersive delay lines and time reversal for low contrast tumour detection

On the basis of the technique of time reversal (TR), through adding dispersive delay lines to each element of a TR mirror, a method for low contrast tumour detection is proposed. When compared with a conventional detection method, the proposed method improves refocusing onto a low dielectric contrast tumour. The method does not require an accurate estimate of the position of the tumour. The theoretical basis for the approach is given and numerical simulated results demonstrate the capability of the proposed method.

Studies of switching kinetics in ferroelectric thin films

Experimental studies are reported concerning the importance of interfacial capacitance (including electrode screening, space-charge layers, and/or chemically discrete dead layers). on domain switching behaviour in thin films of ferroelectric lead zirconate-titanate (PZT), strontium bismuth tantalate (SBT), and barium strontium titanate (BST). Emphasis is placed upon studies at applied field values very near the coercive field E, asymmetry in fatigue for positive and negative polarity coercive fields, and in the case of BST, of the coexistence of ferroelectric and paraelectric phases Studies of dielectric loss show important correlations between tan 6 and fatigue (polarization decrease) as a function of bipolar switching cycles N. This is a priori not obvious, since the former is a linear response and the latter, a nonlinear response. Modelling of enlarged interfacial,space-charge layers in PZT films and chemically distinct dead (paraelectric) layers in BST films shows contradictory tendencies of coercive-voltage changes with the growth of passive layers.

Novel photocatalyst-based colourimetric indicator for oxygen: Use of a platinum catalyst for controlling response times

The preparation and characterisation of a novel, UV-activated, solvent-based, colourimetric indicator for oxygen is described, comprising a redox dye (methylene blue, MB), semiconductor photocatalyst (Pt-TiO2), and a sacrificial electron donor (SED = glycerol), all dispersed/dissolved in a polymer medium (sulfonated polystyrene. SPS). Upon exposure to UVA light, the Pt-TiO2/MB/glycerol/SPS oxygen indicator is readily photobleached as the MB is converted into its oxygen-sensitive, leuco form, LMB. In contrast to its non-platinised TiO2 counterpart (TiO2/MB/glycerol/SPS oxygen indicator), the recovery of the original colour is faster (ca. 1.5 days cf. 5 days at 21 degrees C). This is due to the catalytic action of the 0.38 wt% platinum loaded onto the semiconductor photocatalyst. TiO2, on the oxidation of the photogenerated LMB by ambient O-2. Furthermore, by increasing the level of platinum loading, recovery times can be decreased further; e.g. a Pt-TiO2/MB/glycerol/SPS oxygen indicator with platinum level of 1.52 wt% recovers fully within 12 h. A study of the kinetics of recovery as a function of film thickness revealed the recovery step is not controlled by the diffusion of O-2 through the film, but instead dependent upon the slow rate of oxidation of LMB to MB by O-2 in the low dielectric polymer encapsulation medium. Other work showed this recovery is only moderately dependant upon temperatures above -10 degrees C and very sensitive to relative humidity above 30% RH. Potential uses of this UV light activated indicator are discussed briefly. (C) 2011 Elsevier B.V. All rights reserved.

Holistic design of 8-way combining transformers in SiGe technology for use in millimetre-wave power amplifiers

This paper presents the design of a novel 8-way power-combining transformer for use in mm-wave power amplifier (PA). The combiner exhibits a record low insertion loss of 1.25 dB at 83.5 GHz. A complete circuit comprised of a power splitter, two-stage cascode PA array, a power combiner and input/output matching elements was designed and realized in SiGe technology. Measured gain of at least 16.8 dB was obtained from 76.4 GHz to 85.3 GHz with a peak 19.5 dB at 83 GHz. The prototype delivered 12.5 dBm OP and 14 dBm saturated output power when operated from a 3.2 V DC supply voltage at 78 GHz. © 2013 IEEE.

Epitaxial ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films on La0.7Sr0.3MnO3 bottom electrode

Epitaxial (001)-oriented 0.7Pb(Mg_0.33Nb_0.67)O₃-0.3PbTiO₃ (PMN-PT) thin films were deposited by pulsed laser deposition on vicinal SrTiO₃ (001) substrates using La_0.7Sr_0.3MnO₃ as bottom electrode. Detailed microstructural investigations of these films were carried out using X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). Polarization-field hysteresis curves were measured at room temperature. Spontaneous polarization P s , remnant polarization P r and coercive voltage V c were found to be 25 μC/cm², 15 μC/cm² and 0.81 V, respectively. Field dependent dielectric constant measurements exhibited butterfly shaped curves, indicating the true ferroelectric nature of these films at room temperature. The dielectric constant and the dielectric loss at 100 kHz were found to be 238 and 0.14, respectively. The local piezoelectric properties of PMN-PT films were investigated by piezoelectric force microscopy and were found to exhibit a local piezoelectric coefficient of 7.8 pm/V.

Enhanced target detection in clutter using dispersive delay lines and time reversal

On the basis of the technique of time reversal (TR), a new method for low dielectric contrast target detection in clutter by adding dispersive delay lines (DDLs) to each element of the TR mirror (TRM) is proposed. When compared with a conventional TR system, the proposed method improves refocusing to a target by reducing the impact of other scatterers in the environment. The proposed method makes it unnecessary to estimate the position of the target and removes the need for subsequent subtraction as traditionally required. Theoretical and numerical simulated results demonstrate the proposed method.

Low temperature surface nitridation processes for dielectric-Ge interfaces

Germanium MOS capacitors have been fabricated with a high-? HfO dielectric using ALD. An in-situ low temperature (250°C) nitrogen plasma treatment on the germanium surface prior to the deposition of HfO was found to be beneficial to the electrical properties of the devices. Germanium MOS capacitors have also been fabricated with a SiO dielectric deposited by an atmospheric pressure CVD 'silox' process. The same low temperature plasma nitridation was found to degrade the electrical properties of the silox devices. The effect of a post-metal anneal in H and N on both types of capacitor structure was also found to degrade device electrical properties. copyright The Electrochemical Society.