Geometry- and diffraction-independent ionization probabilities in intense laser fields: Probing atomic ionization mechanisms with effective intensity matching

We report an experimental technique for the comparison of ionization processes in ultrafast laser pulses irrespective of pulse ellipticity. Multiple ionization of xenon by 50 fs 790 nm, linearly and circularly polarized laser pulses is observed over the intensity range 10 TW/cm(2) to 10 PW/cm(2) using effective intensity matching (EIM), which is coupled with intensity selective scanning (ISS) to recover the geometry-independent probability of ionization. Such measurements, made possible by quantifying diffraction effects in the laser focus, are compared directly to theoretical predictions of multiphoton, tunnel and field ionization, and a remarkable agreement demonstrated. EIM-ISS allows the straightforward quantification of the probability of recollision ionization in a linearly polarized laser pulse. Furthermore, the probability of ionization is discussed in terms of the Keldysh adiabaticity parameter gamma, and the influence of the precursor ionic states present in recollision ionization is observed.

DOMINANCE OF SHORT-RANGE-ORDER EFFECTS IN LOW-ENERGY ELECTRON-DIFFRACTION INTENSITY SPECTRA

Using low-energy electron-diffraction (LEED) formalism, we demonstrate theoretically that LEED I-V spectra are characterized mainly by short-range order. We also show experimentally that diffuse LEED (DLEED) I-V spectra can be accurately measured from a disordered system using a video-LEED system even at very low coverage. These spectra demonstrate that experimental DLEED I-V spectra from disordered systems may be used to determine local structures. As an example, it is shown that experimental DLEED I-V spectra from K/Co {1010BAR} at potassium coverages of 0.07, 0.1, and 0.13 monolayer closely resemble calculated and experimental LEED I-V spectra for a well-ordered Co{1010BAR}-c(2X2)-K superstructure, leading to the conclusion that at low coverages, potassium atoms are located in the fourfold-hollow sites and that there is no large bond-length change with coverage.

Epitaxial strain and electric boundary condition effects on the structural and ferroelectric properties of BiFeO3 films

The influence of both compressive and tensile epitaxial strain along with the electrical boundary conditions on the ferroelastic and ferroelectric domain patterns of bismuth ferrite films was studied. BiFeO3 films were grown on SrTiO3(001), DyScO3(110), GdScO3(110), and SmScO3(110) substrates to investigate the effect of room temperature in-plane strain ranging from -1.4% to +0.75%. Piezoresponse force microscopy, transmission electron microscopy, x-ray diffraction measurements, and ferroelectric polarization measurements were performed to study the properties of the films. We show that BiFeO3 films with and without SrRuO3 bottom electrode have different growth mechanisms and that in both cases reduction of the domain variants is possible. Without SrRuO3, stripe domains with reduced variants are formed on all rare earth scandate substrates because of their monoclinic symmetry. In addition, tensile strained films exhibit a rotation of the unit cell with increasing film thickness. On the other side, the presence of SrRuO3 promotes step flow growth of BiFeO3. In case of vicinal SrTiO3 and DyScO3 substrates with high quality SrRuO3 bottom electrode and a low miscut angle of approximate to 0.15 degrees we observed suppression of the formation of certain domain variants. The quite large in-plane misfit of SrRuO3 with GdScO3 and SmScO3 prevents the growth of high quality SrRuO3 films and subsequent domain variants reduction in BiFeO3 on these substrates, when SrRuO3 is used as a bottom electrode.

Orientation effects in copper phthalocyanine films studied by electron paramagnetic resonance spectroscopy

The metallo-phthalocyanines (MPcs) are an interesting group of organic semiconductor materials for applications such as large area solar cells due to their optoelectronic properties coupled with the possibility of easily and cheaply fabricating thin films of MPcs [1, 2]. As for organic semiconductors in general, many of the interesting properties of the MPcs such as magnetism, light absorption and charge transport, are highly anisotropic [2, 3]. To maximise the efficiency of a device based on these materials it is therefore important to study their molecular orientation in films and to assess the influence of different growth conditions and substrate treatments.
X-ray diffraction is a well established and powerful technique for studying texture (and hence molecular orientation) in crystalline materials, but it cannot provide any information about amorphous or nanocrystalline films. In electron paramagnetic resonance (EPR) spectroscopy the signal comes from the spin of unpaired electrons in the material. This technique therefore does not require the sample to be crystalline. It works for any sample with paramagnetic centres such as the MPcs where the unpaired electrons are contributed by the metal. In this paper we present a continuous-wave X-band EPR study using the anisotropy of the EPR spectrum of CuPc [4] to determine the orientation effects in different types of CuPc films. From these measurements we gain insight into the molecular arrangement of films with different spin concentrations, and apply our technique to the study of molecular orientation in photovoltaic cells.

Orientation effects in copper phthalocyanine films studied by EPR

Organic semiconductors have already found commercial applications in for example displays with organic light-emitting diodes (OLEDs) and great advances are also being made in other areas, such as organic field-effect transistors and organic solar cells. [1] The organic semicondutor group of materials known as metal phthalocyanines (MPc’s) is interesting for applications such as large area solar cells due to their optoelectronic properties coupled with the possibility of easily and cheaply fabricating thin films of MPc’s. [1, 2]

Many of the properties of organic semiconductors, such as magnetism, light absorption and charge transport, show orientational anisotropy. [2, 3] To maximise the efficiency of a device based on these materials it is therefore important to study the molecular orientation in films and to assess the influence of different growth conditions and substrate treatments. X-ray diffraction is a well established and powerful technique for studying texture (and hence molecular orientation)_in crystalline materials, but cannot provide any information about amorphous or nanocrystalline films. In this paper we present a continuous wave X-band EPR study using the anisotropy of the CuPc EPR spectrum [4] to determine the orientation effects in different types of CuPc films. From these measurements we also gain insight into the molecular arrangement of films of CuPc mixed with the isomorphous H2Pc and with C60 in films typical of real solar cell systems.

Characterization of optical properties of PtSi at 3.392 mu m from 300 K to 85 K and relation of morphological effects

PtSi/Si Schottky junctions, fabricated using a conventional technique of Pt deposition with a subsequent thermal anneal, are examined using X-ray diffraction, atomic force microscopy and a novel prism/gap/sample optical coupling system. With the aid of X-ray diffraction and atomic farce microscopy it is shown that a post-anneal etch in aqua regia is essential for the removal of an unreacted, rough surface layer of Pt, to leave a much smoother PtSi film. The prism/gap/sample or Otto coupling rig is mounted in a small UHV chamber and has facilities for remote variation of the gap (by virtue of a piezoactuator system) and variation of the temperature in the range of similar to 300 K - 85 K. The system is used to excite surface plasmon polaritons on the outer surface of the PtSi and thus produce sensitive optical characterisation as a function of temperature. This is performed in order to yield an understanding of the temperature dependence of phonon and interface scattering of carriers in the PtSi.

Wave Interaction with an Oscillating Wave Surge Converter, Part 1: Viscous Effects

Bottom hinged oscillating wave surge converters are known to be an efficient method of extracting power from ocean waves. The present work deals with experimental and numerical studies of wave interactions with an oscillating wave surge converter. It focuses on two aspects: (1) viscous effects on device performance under normal operating conditions; and (2) effects of slamming on device survivability under extreme conditions. Part I deals with the viscous effects while the extreme sea conditions will be presented in Part II. The numerical simulations are performed using the commercial CFD package ANSYS FLUENT. The comparison between numerical results and experimental measurements shows excellent agreement in terms of capturing local features of the flow as well as the dynamics of the device. A series of simulations is conducted with various wave conditions, flap configurations and model scales to investigate the viscous and scaling effects on the device. It is found that the diffraction/radiation effects dominate the device motion and that the viscous effects are negligible for wide flaps.