Diffraction-limited imaging on the 200-inch telescope

We have used the technique of non-redundant masking at the Palomar 200-inch telescope and radio VLBI imaging software to make optical aperture synthesis maps of two binary stars, β Corona Borealis and σ Herculis. The dynamic range of the map of β CrB, a binary star with a separation of 230 milliarcseconds is 50:1. For σ Her, we find a separation of 70 milliarcseconds and the dynamic range of our image is 30:1. These demonstrate the potential of the non-redundant masking technique for diffraction-limited imaging of astronomical objects with high dynamic range.

We find that the optimal integration time for measuring the closure phase is longer than that for measuring the fringe amplitude. There is not a close relationship between amplitude errors and phase errors, as is found in radio interferometry. Amplitude self calibration is less effective at optical wavelengths than at radio wavelengths. Primary beam sensitivity correction made in radio aperture synthesis is not necessary in optical aperture synthesis.

The effects of atmospheric disturbances on optical aperture synthesis have been studied by Monte Carlo simulations based on the Kolmogorov theory of refractive-index fluctuations. For the non-redundant masking with τ_c-sized apertures, the simulated fringe amplitude gives an upper bound of the observed fringe amplitude. A smooth transition is seen from the non-redundant masking regime to the speckle regime with increasing aperture size. The fractional reduction of the fringe amplitude according to the bandwidth is nearly independent of the aperture size. The limiting magnitude of optical aperture synthesis with τ_c-sized apertures and that with apertures larger than τ_c are derived.

Monte Carlo simulations are also made to study the sensitivity and resolution of the bispectral analysis of speckle interferometry. We present the bispectral modulation transfer function and its signal-to-noise ratio at high light levels. The results confirm the validity of the heuristic interferometric view of image-forming process in the mid-spatial-frequency range. The signal-to- noise ratio of the bispectrum at arbitrary light levels is derived in the mid-spatial-frequency range.

The non-redundant masking technique is suitable for imaging bright objects with high resolution and high dynamic range, while the faintest limit will be better pursued by speckle imaging.

Effects produced in GaAs by MeV ion bombardment

Presented in the first part of this thesis is work performed on the ionizing energy beam induced adhesion enhancement of thin (~ 500 Angstrom) Au films on GaAs substrates. The ionizing beam, employed in the present thesis, is the MeV ions (i.e., ¹⁶O, ¹⁹F, and ³⁵Cl), with energies between 1 and 20 MeV. Using the "Scratch" test for adhesion measurement, and ESCA for chemical analysis of the film-substrate interface, the native oxide layer at the interface is shown to play an important role in the adhesion enhancement by the ionizing radiation. A model is discussed which explains the experimental data on the the dependence of adhesion enhancement on the energy which was deposited into electronic processes at the interface. The ESCA data indicate that the chemical bonds (or compounds), which are responsible for the increase in the thin film adherence, are hydroxides rather than oxides.

In the second part of the thesis we present a research performed on the radiation damage in GaAs crystals produced by MeV ions. Lattice parameter dilatation in the surface layers of the GaAs crystals becomes saturated after a high dose bombardment at room temperature. The strain produced by nuclear collisions is shown to relax partially due to electronic excitation (with a functional dependence on the nuclear and electronic stopping power of bombarding ions). Data on the GaAs and GaP crystals suggest that low temperature recovery stage defects produce major crystal distortion. The x-ray rocking curve technique with a dynamical diffraction theory analysis provides the depth distribution of the strain and damage in the MeV ion bombarded crystals.

Effects of magnetostriction and superlattice formation in ferromagnetic thin films

The contribution to the magnetic uniaxial perpendicular anisotropy which arises from substrate constraint through magnetostrictive effects has been measured in Ni-Fe and Ni-Co thin films evaporated on substrates at room temperature. This was accomplished by measuring the perpendicular anisotropy before and after removal of the film from the substrate. Data are given for the fcc crystal structure regions of both alloy systems, but data for Ni-Co include compositions with less than 60% Ni which have a small percentage of the hcp phase mixed with the fcc phase. The constraint contribution to the perpendicular anisotropy correlates well with the value of the bulk magnetostriction constant using the equation ∆K_˔=3/2λ_sσ. Measured values of isotropic stress for films thicker than 600 Å were 1.6 x 10¹⁰ dyn/cm². In films less than 600 Å thick the isotropic stress decreased with decreasing thickness. After removal of the films from the substrates, the measured perpendicular anisotropy deviated from the expected geometrical shape anisotropy near pure Ni in both alloys. This indicates that additional significant sources of anisotropy exist at these compositions.

The effect of substrate constraint on the crystalline anisotropy K₁ of Ni-Fe epitaxial films has been studied by use of a film removal technique, which involves the evaporation of an epitaxial layer of LiF on MgO, the epitaxial growth of the metallic film on the LiF, and the stripping of the film with water soluble tape. Films ranging in composition from 50% to 100% Ni have been studied. For compositions below 90% Ni the experimental values agree reasonably well with the first order theoretical prediction, ∆K₁=[-9/4(C₁₁-C₁₂)λ² 100+9/2C₄₄λ²111].

In order to compare the magnetic properties of epitaxial thin films more completely with the properties of bulk single crystals, Ni-Fe films ranging in composition from 60% to 90% Ni, which were evaporated epitaxially on (100) MgO substrates, have been subsequently annealed at 400°C in a vacuum of less than 10^-7 Torr to form the ordered Ni₃Fe structure near the 75% composition. This ordered structure has been confirmed by electron diffraction.

The saturation magnetization at Ni₃Fe increased about 6% with ordering which is in good agreement with previous bulk data. Measurements of the magnetocrystalline anisotropy energy K₁ for the epitaxial films show the same large changes with ordering as observed in bulk single crystal samples. In the (001) plane the magnetostriction constants ^λ100, ^λ111 are directly related to the induced anisotropy due to a uniform uniaxial strain in the [100] and [110] directions respectively. Assuming that the elastic constants of a film are the same as in bulk material and are unchanged by ordering, the changes in strain sensitivity with ordering for the epitaxial films are found to be in good agreement with values predicted from bulk data. The exchange constant A as measured by ferromagnetic resonance has been measured at the Ni₃Fe composition and found to increase 25% with ordering. This seems to indicate a significant increase in the Curie temperature which has only been inferred indirectly for bulk material.