5 resultados para Circuit theory

em QUB Research Portal - Research Directory and Institutional Repository for Queen's University Belfast


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This study presents a new method for determining the transmission network usage by loads and generators, which can then be used for transmission cost/loss allocation in an explainable and justifiable manner. The proposed method is based on solid physical grounds and circuit theory. It relies on dividing the currents through the network into two components; the first one is attributed to power flows from generators to loads, whereas the second one is because of the generators only. Unlike almost all the available methods, the proposed method is assumption free and hence it is more accurate than similar methods even those having some physical basis. The proposed method is validated through a transformer analogy, and theoretical derivations. The method is verified through application to the IEEE 30 bus system and the IEEE 118 test system. The results obtained verified many desirable features of the proposed method. Being more accurate in determining the network usage, in an explainable transparent manner, and in giving accurate cost signals, indicating the best locations to add loads and generation, are among the many desirable features.

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Today's multi-media electronic era is driven by the increasing demand for small multifunctional devices able to support diverse services. Unfortunately, the high levels of transistor integration and performance required by such devices lead to an unprecedented increase of on-chip power that significantly limits the battery lifetime and even poses reliability concerns. Several techniques have been developed to address the power increase, but voltage over-scaling (VOS) is considered to be one of the most effective ones due to the quadratic dependence of voltage on dynamic power consumption. However, VOS may not always be applicable since it increases the delay in all paths of a system and may limit high performance required by today's complex applications. In addition, application of VOS is further complicated since it increases the variations in transistor characteristics imposed by their tiny size which can lead to large delay and leakage variations, making it difficult to meet delay and power budgets. This paper presents a review of various cross-layer design options that can provide solutions for dynamic voltage over-scaling and can potentially assist in meeting the strict power budgets and yield/quality requirements of future systems. © 2011 IEEE.

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Experimental results are presented to show how a planar circuit, printed on a laterally shielded dielectric waveguide, can induce and control the radiation from a leaky-mode. By studying the leaky-mode complex propagation constant, a desired radiation pattern can be synthesized, controlling the main radiation characteristics (pointing direction, beamwidth, sidelobes level) for a given frequency, This technique leads to very flexible and original leaky-wave antenna designs. The experiments show to be in very good agreement with the leaky-mode theory.

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An analytic formulation of dynamic electro-thermally induced nonlinearity is developed for a general resistive element, yielding a self-heating circuit model based on a fractional derivative. The model explains the 10 dB/decade slope of the intermodulation products observed in two-tone testing. Two-tone testing at 400 MHz of attenuators, microwave chip terminations, and coaxial terminations is reported with tone spacing ranging from 1 to 100 Hz.

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This paper proposes a substrate integrated waveguide
(SIW) cavity-based method that is compliant with
ground-signal–ground (GSG) probing technology for dielectric
characterization of printed circuit board materials at millimeter
wavelengths. This paper presents the theory necessary to retrieve
dielectric parameters from the resonant characteristics of SIW
cavities with particular attention placed on the coupling scheme
and means for obtaining the unloaded resonant frequency. Different
sets of samples are designed and measured to address the
influence of the manufacturing process on the method. Material
parameters are extracted at - and -band from measured data
with the effect of surface roughness of the circuit metallization
taken into account.