Single crystal CVD diamond growth strategy by the use of a 3D geometrical model: Growth on (113) oriented substrates

The quality of single crystal diamond obtained by microwave CVD processes has been drastically improved in the last 5 years thanks to surface pretreatment of the substrates [A. Tallaire, J. Achard, F. Silva, R.S. Sussmann, A. Gicquel, E. Rzepka, Physica Status Solidi (A) 201, 2419-2424 (2004); G. Bogdan, M. Nesladek, J. D'Haen, J. Maes, V.V. Moshchalkov, K. Haenen, M. D'Olieslaeger, Physica Status Solidi (A) 202, 2066-2072 (2005); M. Yamamoto, T. Teraji, T. Ito, Journal of Crystal Growth 285, 130-136 (2005)]. Additionally, recent results have unambiguously shown the occurrence of (110) faces on crystal edges and (113) faces on crystal corners [F. Silva, J. Achard, X. Bonnin, A. Michau, A. Tallaire, O. Brinza, A. Gicquel, Physica Status Solidi (A) 203, 3049-3055 (2006)]. We have developed a 3D geometrical growth model to account for the final crystal morphology. The basic parameters of this growth model are the relative displacement speeds of (111), (110) and (113) faces normalized to that of the (100) faces, respectively alpha, beta, and gamma. This model predicts both the final equilibrium shape of the crystal (i.e. after infinite growth time) and the crystal morphology as a function of alpha, beta, gamma, and deposition time.

An optimized operating point, deduced from the model, has been validated experimentally by measuring the growth rate in (100), (111), (110), and (113) orientations. Furthermore, the evolution of alpha, beta, gamma as a function of methane concentration in the gas discharge has been established. From these results, crystal growth strategies can be proposed in order, for example, to enlarge the deposition area. In particular, we will show, using the growth model, that the only possibility to significantly increase the deposition area is, for our growth conditions, to use a (113) oriented substrate. A comparison between the grown crystal and the model results will be discussed and characterizations of the grown film (Photoluminescence spectroscopy, EPR, SEM) will be presented. (C) 2008 Elsevier B.V. All rights reserved.

Catalyst distribution and carbon nanotube morphology in multilayer forests by mixed CVD processes

Carbon nanotubes can be grown as forests of aligned fibers on a substrate with a catalyst coated prior to or added during synthesis. A major process interruption can initiate the growth of second and successive layers of forest on top or at the base of the existing layers which are thereby lifted up. We report on the generation of multilayer CNT forests where the first forest is generated either by catalyst coinjection (CCI) of ferrocene with hydrocarbon (xylene) or by catalyst predeposition (CPD) of iron followed with hydrocarbon (acetylene). Subsequent layers are then produced by CCI alone to give uniform (all CCI) or mixed (CPD and CCI) structures to study the distribution of the iron catalyst and CNT morphology and to determine whether the CPD forest templates or otherwise influences the growth of subsequent CCI forests. The bottom-up base growth of second and subsequent CCI forests is reaction rate controlled. CCI multilayer forests accumulate catalyst (iron) in a variety of distinct locations. A pre-existing CPD forest modifies subsequent CCI forest initiation, morphology, and catalyst distribution but does not itself accumulate catalyst or change appearance. © 2009 American Chemical Society.