SiGe HBTs on Bonded SOI Incorporating Buried Silicide Layers

The performance of silicon bipolar transistors has been significantly improved by the use of ultra narrow base layers of SiGe. To further improve device performance by minimising parasitic resistance and capacitance the authors produced an unique silicon-on-insulator (SOI) substrate incorporating a buried tungsten disilicide layer. This structure forms the basis of a recent submission by Zarlink Semiconductors ( Silvaco, DeMontfort & Queen�s) to DTI for high voltage devices for automotive applications. The Queen�s part of the original EPSRC project was rated as tending to outstanding.

School-related predictors of smoking, drinking and drug use: Evidence from the Belfast Youth Development Study

Objective

To examine whether students’ school engagement, relationships with teachers, educational aspirations and involvement in fights at school are associated with various measures of subsequent substance use.
Methods

Data were drawn from the Belfast Youth Development Study (n = 2968). Multivariate logistic models examined associations between school-related factors (age 13/14) and substance use (age 15/16).
Results

The two factors which were consistently and independently associated with regular substance use among both males and females were student–teacher relationships and fighting at school: positive teacher-relationships reduced the risk of daily smoking by 48%, weekly drunkenness by 25%, and weekly cannabis use by 52%; being in a fight increased the risk of daily smoking by 54%, weekly drunkenness by 31%, and weekly cannabis use by 43%. School disengagement increased the likelihood of smoking and cannabis use among females only.
Conclusion

Further research should focus on public health interventions promoting positive relationships and safety at school.