Evaluation of the piezoresistance properties of p-type silicon

This paper investigates the characteristics of silicon piezoresistors with various doping concentrations and Length/Width dimensions at micro level. The silicon piezoresistors have been produced by conventional fabrication methods. The measurements are conducted on silicon test chips where p type resistors are fabricated on n type (100) silicon substrates along the <110> direction. A four point bending setup has been designed and fabricated for characterizing the piezoresistor sets. The four point bending setup is used to apply uniform uniaxial stress along the <110> direction. This experimental result demonstrates a good linear relationship between resistance change and stress applied. The effect of doping concentration on temperature sensitivity is also investigated.

Sets of p-multiplicity in locally compact groups

We initiate the study of sets of p-multiplicity in locally compact groups and their operator versions. We show that a closed subset E of a second countable locally compact group G is a set of p-multiplicity if and only if E∗={(s,t):ts−1∈E} is a set of operator p-multiplicity. We exhibit examples of sets of p-multiplicity, establish preservation properties for unions and direct products, and prove a p-version of the Stone–von Neumann Theorem.