85 resultados para semiconductor microlasers
Resumo:
The variation in the activation energy for the initial stage of photomineralization of 4-chlorophenol (4-CP), sensitized by Degussa P25 TiO2 was investigated as a function of P-O2 and [4-CP]. A model was developed based on the incorporation of Arrhenius-type functions in a general rate equation for the initial stage of photomineralization. Values of the essential constants in the model were derived from a few simple experiments. Positive, negative and zero apparent activation energies were predicted using the model, and verified experimentally, under moderate reaction conditions. The general applicability of the model is briefly discussed.
Resumo:
The basic principles of the photooxidative mineralization of organic pollutants by O2, sensitized by TiO2, are described. The kinetics of this process as a function of [TiO2], [organic pollutant], [O2], light intensity, temperature, pH, and the type of anion present are discussed, and a general kinetic model is presented. Standard test and demonstration systems for water purification by TiO2 photocatalysis are described and other novel applications of semiconductor photocatalysis are outlined.
Resumo:
The optical properties of plasmonic semiconductor devices fabricated by focused ion beam (FIB) milling deteriorate because of the amorphisation of the semiconductor substrate. This study explores the effects of combining traditional 30 kV FIB milling with 5 kV FIB patterning to minimise the semiconductor damage and at the same time maintain high spatial resolution. The use of reduced acceleration voltages is shown to reduce the damage from higher energy ions on the example of fabrication of plasmonic crystals on semiconductor substrates leading to 7-fold increase in transmission. This effect is important for focused-ion beam fabrication of plasmonic structures integrated with photodetectors, light-emitting diodes and semiconductor lasers.
Resumo:
The nonlinear scattering of pulses by periodic stacks of semiconductor layers with magnetic bias has been studied in the self-consistent problem formulation, taking into account mobility of carriers. The three-wave mixing technique has been applied to the analysis of the waveform evolution in the stacks illuminated by two Gaussian pulses with different central frequencies and lengths. The effects of external magnetic bias, and stack physical and geometrical parameters on the properties of the scattered waveforms are discussed. © 2013 IEEE.
Resumo:
The pulsed second harmonic generation (SHG) by periodic stacks of nonlinear semiconductor layers with external magnetic bias has been studied in the self-consistent problem formulation, taking into account mobility of carriers. The products of nonlinear scattering in the three-wave mixing process are examined. It is demonstrated that the waveform evolution in magnetoactive weakly nonlinear semiconductor periodic structure illuminated by Gaussian pulse is strongly affected by the magnetic bias and collision frequency of the carriers. The effect of nonreciprocity on the SHG efficiency is discussed and illustrated by the examples. © 2013 European Microwave Association.
Resumo:
The properties of the combinatorial frequency generation and wave scattering by periodic stacks of nonlinear passive semiconductor layers are explored. It is demonstrated that the nonlinearity in passive weakly nonlinear semiconductor medium has the resistive nature associated with the dynamics of carriers. The features of the combinatorial frequency generation and the effects of the pump wave scattering and parameters of the constituent semiconductor layers on the efficiency of the frequency mixing are discussed and illustrated by the examples. © 2013 IEICE.