Performance and Fault Tolerance of Preconditioned Iterative Solvers on Low-Power ARM Architectures

As the complexity of computing systems grows, reliability and energy are two crucial challenges asking for holistic solutions. In this paper, we investigate the interplay among concurrency, power dissipation, energy consumption and voltage-frequency scaling for a key numerical kernel for the solution of sparse linear systems. Concretely, we leverage a task-parallel implementation of the Conjugate Gradient method, equipped with an state-of-the-art pre-conditioner embedded in the ILUPACK software, and target a low-power multi core processor from ARM.In addition, we perform a theoretical analysis on the impact of a technique like Near Threshold Voltage Computing (NTVC) from the points of view of increased hardware concurrency and error rate.

Ultra-Compact and Robust FPGA-Based PUF Identification Generator

Physically Unclonable Functions (PUFs), exploit inherent manufacturing variations and present a promising solution for hardware security. They can be used for key storage, authentication and ID generations. Low power cryptographic design is also very important for security applications. However, research to date on digital PUF designs, such as Arbiter PUFs and RO PUFs, is not very efficient. These PUF designs are difficult to implement on Field Programmable Gate Arrays (FPGAs) or consume many FPGA hardware resources. In previous work, a new and efficient PUF identification generator was presented for FPGA. The PUF identification generator is designed to fit in a single slice per response bit by using a 1-bit PUF identification generator cell formed as a hard-macro. In this work, we propose an ultra-compact PUF identification generator design. It is implemented on ten low-cost Xilinx Spartan-6 FPGA LX9 microboards. The resource utilization is only 2.23%, which, to the best of the authors' knowledge, is the most compact and robust FPGA-based PUF identification generator design reported to date. This PUF identification generator delivers a stable range of uniqueness of around 50% and good reliability between 85% and 100%.

Source/drain extension region engineering in nanoscale double gate SOI MOSFETs: Novel design methodology for low-voltage analog applications

The present paper proposes for the first time, a novel design methodology based on the optimization of source/drain extension (SDE) regions to significantly improve the trade-off between intrinsic voltage gain (A(vo)) and cut-off frequency (f(T)) in nanoscale double gate (DG) devices. Our results show that an optimally designed 25 nm gate length SDE region engineered DG MOSFET operating at drain current of 10 mu A/mu m, exhibits up to 65% improvement in intrinsic voltage gain and 85% in cut-off frequency over devices designed with abrupt SIDE regions. The influence of spacer width, lateral source/drain doping gradient and symmetric as well as asymmetrically designed SDE regions on key analog figures of merit (FOM) such as transconductance (g(m)), transconductance-to-current ratio (g(m)/I-ds), Early voltage (V-EA), output conductance (g(ds)) and gate capacitances are examined in detail. The present work provides new opportunities for realizing future low-voltage/low-power analog circuits with nanoscale SDE engineered DG MOSFETs. (C) 2007 Elsevier B.V. All rights reserved.

Source/drain extension region engineering in FinFETs for low-voltage analog applications

In this letter, we propose a novel design methodology for engineering source/drain extension (SDE) regions to simultaneously improve intrinsic dc gain (A(vo)) and cutoff frequency (f(T)) of 25-nm gate-length FinFETs operated at low drain-current (I-ds = 10 mu A/mu m). SDE region optimization in 25-nm FinFETs results in exceptionally high values of Avo (similar to 45 dB) and f(T) (similar to 70 GHz), which is nearly 2.5 times greater when compared to devices designed with abrupt SDE regions. The influence of spacer width, lateral source/drain doping gradient, and the spacer-to-gradient ratio on key analog figures of merit is examined in detail. This letter provides new opportunities for realizing future low-voltage/low-power analog design with nanoscale SDE-engineered FinFETs.

Power Efficient Dynamic-Range Utilisation for DSP On FPGA

A power and resource efficient ‘dynamic-range utilisation’ technique to increase operational capacity of DSP IP cores by exploiting redundancy in the data epresentation of sampled analogue input data, is presented. By cleverly partitioning dynamic-range into separable processing threads, several data streams are computed concurrently on the same hardware. Unlike existing techniques which act solely to reduce power consumption due to sign extension, here the dynamic range is exploited to increase operational capacity while still achieving reduced power consumption. This extends an existing system-level, power efficient framework for the design of low power DSP IP cores, which when applied to the design of an FFT IP core in a digital receiver system gives an architecture requiring 50% fewer multipliers, 12% fewer slices and 51%-56% less power.

Power Efficient DSP Datapath Configuration Methodology for FPGA

Exploiting the underutilisation of variable-length DSP algorithms during normal operation is vital, when seeking to maximise the achievable functionality of an application within peak power budget. A system level, low power design methodology for FPGA-based, variable length DSP IP cores is presented. Algorithmic commonality is identified and resources mapped with a configurable datapath, to increase achievable functionality. It is applied to a digital receiver application where a 100% increase in operational capacity is achieved in certain modes without significant power or area budget increases. Measured results show resulting architectures requires 19% less peak power, 33% fewer multipliers and 12% fewer slices than existing architectures.

A Compact V-band power detector

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A compact V-band active power detector using Infineon 0.35 µm SiGe HBT process (fT/fmax =170/250 GHz) is described. The total chip area is only 0.35×0.8 mm2 including all pads. This design exhibits a dynamic range larger than 20 dB over the frequency range from 55 GHz to 67 GHz. It also offers a simple and low-power application potential as an envelop detector in multi-Gbps high data rate demodulators for OOK/ASK etc.

HERQULES:System level cross-layer design exploration for efficient energy-quality trade-offs

In this paper, we present a unique cross-layer design framework that allows systematic exploration of the energy-delay-quality trade-offs at the algorithm, architecture and circuit level of design abstraction for each block of a system. In addition, taking into consideration the interactions between different sub-blocks of a system, it identifies the design solutions that can ensure the least energy at the "right amount of quality" for each sub-block/system under user quality/delay constraints. This is achieved by deriving sensitivity based design criteria, the balancing of which form the quantitative relations that can be used early in the system design process to evaluate the energy efficiency of various design options. The proposed framework when applied to the exploration of energy-quality design space of the main blocks of a digital camera and a wireless receiver, achieves 58% and 33% energy savings under 41% and 20% error increase, respectively. © 2010 ACM.

Design methodology to trade off power, output quality and error resiliency: Application to color interpolation filtering

Power dissipation and tolerance to process variations pose conflicting design requirements. Scaling of voltage is associated with larger variations, while Vdd upscaling or transistor up-sizing for process tolerance can be detrimental for power dissipation. However, for certain signal processing systems such as those used in color image processing, we noted that effective trade-offs can be achieved between Vdd scaling, process tolerance and "output quality". In this paper we demonstrate how these tradeoffs can be effectively utilized in the development of novel low-power variation tolerant architectures for color interpolation. The proposed architecture supports a graceful degradation in the PSNR (Peak Signal to Noise Ratio) under aggressive voltage scaling as well as extreme process variations in. sub-70nm technologies. This is achieved by exploiting the fact that some computations are more important and contribute more to the PSNR improvement compared to the others. The computations are mapped to the hardware in such a way that only the less important computations are affected by Vdd-scaling and process variations. Simulation results show that even at a scaled voltage of 60% of nominal Vdd value, our design provides reasonable image PSNR with 69% power savings.

Power Modeling and Capping for Heterogeneous ARM/FPGA SoCs

Low-power processors and accelerators that were originally designed for the embedded systems market are emerging as building blocks for servers. Power capping has been actively explored as a technique to reduce the energy footprint of high-performance processors. The opportunities and limitations of power capping on the new low-power processor and accelerator ecosystem are less understood. This paper presents an efficient power capping and management infrastructure for heterogeneous SoCs based on hybrid ARM/FPGA designs. The infrastructure coordinates dynamic voltage and frequency scaling with task allocation on a customised Linux system for the Xilinx Zynq SoC. We present a compiler-assisted power model to guide voltage and frequency scaling, in conjunction with workload allocation between the ARM cores and the FPGA, under given power caps. The model achieves less than 5% estimation bias to mean power consumption. In an FFT case study, the proposed power capping schemes achieve on average 97.5% of the performance of the optimal execution and match the optimal execution in 87.5% of the cases, while always meeting power constraints.

Rational design of a dual-mode optical and chemical prodrug

Purpose. The purpose of this study is to demonstrate the rational design and behaviour of the first dual mode optical and chemical prodrug, exemplified by an acetyl salicylic acid-based system. Methods. A cyclic 1,4-benzodioxinone prodrug was synthesised by reaction of 3,5-dimethoxybenzoin and acetyl salicoyl chloride with pyridine. After purification by column chromatography and recrystallization, characterization was achieved using infrared and NMR spectroscopies, mass spectrometry, elemental analysis and single crystal X-ray diffraction. Light-triggered drug liberation was characterised via UV-visible spectroscopy following low-power 365 nm irradiation for controlled times. Chemical drug liberation was characterised via UV-visible spectroscopy in pH 5.5 solution. Results. The synthetic method yielded pure prodrug, with full supporting characterisation. Light-triggered drug liberation proceeded at a rate of 8.30 10j2 sj1, while chemical, hydrolytic liberation proceeded independently at 1.89 10j3 sj1. The photochemical and hydrolytic reactions were both quantitative. Conclusions. This study demonstrates the first rational dual-mode optical and chemical prodrug, using acetyl salicylic acid as a model, acting as a paradigm for future dual-mode systems. Photochemical drug liberation proceeds 44 times faster than chemical liberation, suggesting potential use in drug-eluting medical devices where an additional burst of drug is required at the onset of infection.

Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers

A comparison of dc characteristics of fully depleted double-gate (DG) MOSFETs with respect to low-power circuit applications and device scaling has been performed by two-dimensional device simulation. Three different DG MOSFET structures including a conventional N+ polysilicon gate device with highly doped Si layer, an asymmetrical P+/N+ polysilicon gate device with low doped Si layer and a midgap metal gate device with low doped Si layer have been analysed. It was found that DG MOSFET with mid-gap metal, gates yields the best dc parameters for given off-state drain leakage current and highest immunity to the variation of technology parameters (gate length, gate oxide thickness and Si layer thickness). It is also found that an asymmetrical P+/N+ polysilicon gate DG MOSFET design offers comparable dc characteristics, but better parameter immunity to technology tolerances than a conventional DG MOSFET. (C) 2004 Elsevier Ltd. All rights reserved.

Space and phase resolved optical emission in mode transitions of radio-frequency inductively coupled plasmas

Inductively coupled radio-frequency plasmas can be operated in two distinct modes. At low power and comparatively low plasma densities the plasma is sustained in capacitive mode (E-mode). As the plasma density increases a transition to inductive mode (H-mode) is observed. This transition region is of particular interest and governed by non-linear dynamics, which under certain conditions results in structure formation with strong spatial gradients in light emission. These modes show pronounced differences is various measureable quantities e.g. electron densities, electron energy distribution functions, ion energy distribution functions, dynamics of optical light emission. Here the transition from E- to H- mode in an oxygen containing inductively coupled plasma (ICP) is investigated using space and phase resolved optical emission spectroscopy (PROES). The emission, measured phase resolved, allows investigation of the electron dynamics within the rf cycle, important for understanding the power coupling and ionization mechanisms in the discharge. The temporal variation of the emission reflects the dynamics of relatively high-energy electrons. It is possible to distinguish between E- and H-mode from the intensity and temporal behaviour of the emission.