SATURATED AND NEAR-DIFFRACTION-LIMITED OPERATION OF AN XUV LASER AT 23.6 NM

Amplification of spontaneous emission (ASE) at 23.6 nm has been studied in a Ge plasma heated by a 1 TW infrared laser pulse. The exponent of the axial gain reached 21 in a geometry with Fresnel number less-than-or-equal-to 1. Two plasma columns of combined length up to 36 mm were used with an extreme ultraviolet mirror giving double-pass amplification. Saturation of the ASE output was observed. The beam divergence was about 8 x diffraction limited with a brightness estimated at 10(14) W cm-2 sr-1. The feedback from the mirror was significantly reduced probably by radiation damage from the plasma.

Extreme ultraviolet line emission at 24.7 nm from Li-like nitrogen plasma produced by a short KrF excimer laser pulse

Recently using KrF high power laser (248 nm; 350 fs; 5.0x10(16) W/cm(2)) in the Rutherford Appleton Laboratory an experimental search for recombination extreme ultraviolet (XUV) laser action in Li-like nitrogen ions was performed. To understand the experimental results of line emission at 24.7 nm in the 3d(5/2)-2p(3/2) transition of the Li-like nitrogen ion a simulation was undertaken using a one-dimensional Lagrangian hydrodynamic code. From the simulation results, we confirmed that there was nonlinear dependence of spectral line emission on the gas density which was well matched to the experimental results. Only a six times increase of the 24.7 nm emission intensity was obtained when the plasma length was increased 1000 times from 1 mu m as an optically thin case to 1 mm. Also, the spatial profile of the electron density and temperature was obtained and the electron temperature was about 40-50 eV which was too high for the optical field ionization x-ray lasing. We could not find evidence of x-ray laser gain. (C) 1996 American Institute of Physics.

High-order harmonics of 248.6-nm KrF laser from helium and neon ions

We report high harmonic generation from a 248.6-nm KrF laser giving harmonic orders up to the 37th (67 Angstrom) in a helium gas jet and the 35th (71 Angstrom) in neon, for laser intensities up to 4 x 10(17) W/cm(2) in 380-fs pulses. These observations are interpreted using theoretical modeling that identifies the ion species He+, Ne+, and Ne2+ as the sources of the highest harmonics.

PROPERTIES OF ZNS THIN-FILMS PREPARED BY 248-NM PULSED-LASER DEPOSITION

Pulsed laser deposition (PLD) from a hot pressed manganese doped ZnS target using a KrF laser, has produced a high rate deposition method for growing luminescent thin films. Good stoichiometric quality and typical luminescent crystal structures have been observed with a predominant hexagonal phase and little evidence of the cubic phase. The luminescent characteristics were determined by cathodoluminescence and photoluminescence excitation and stable electroluminescence was observed under pulsed dc conditions with a minimum brightness of 150 cd/m2. PLD film characteristics are compared with those observed in radio-frequency sputtered samples.

Cell type-dependent uptake, localization, and cytotoxicity of 1.9 nm gold nanoparticles

Background: This follow-up study aims to determine the physical parameters which govern the differential radiosensitization capacity of two tumor cell lines and one immortalized normal cell line to 1.9 nm gold nanoparticles. In addition to comparing the uptake potential, localization, and cytotoxicity of 1.9 nm gold nanoparticles, the current study also draws on comparisons between nanoparticle size and total nanoparticle uptake based on previously published data.

Methods: We quantified gold nanoparticle uptake using atomic emission spectroscopy and imaged intracellular localization by transmission electron microscopy. Cell growth delay and clonogenic assays were used to determine cytotoxicity and radiosensitization potential, respectively. Mechanistic data were obtained by Western blot, flow cytometry, and assays for reactive oxygen species.

Results: Gold nanoparticle uptake was preferentially observed in tumor cells, resulting in an increased expression of cleaved caspase proteins and an accumulation of cells in sub G1 phase. Despite this, gold nanoparticle cytotoxicity remained low, with immortalized normal cells exhibiting an LD50 concentration approximately 14 times higher than tumor cells. The surviving fraction for gold nanoparticle-treated cells at 3 Gy compared with that of untreated control cells indicated a strong dependence on cell type in respect to radiosensitization potential.

Conclusion: Gold nanoparticles were most avidly endocytosed and localized within cytoplasmic vesicles during the first 6 hours of exposure. The lack of significant cytotoxicity in the absence of radiation, and the generation of gold nanoparticle-induced reactive oxygen species provide a potential mechanism for previously reported radiosensitization at megavoltage energies.

Plasmonic junctions with cucurbit[5]uril 'glue': fabrication of precise sub-nm junctions in gold nanoparticle assemblies

Aggregation of gold nanoparticles with rigid cucurbit[5]uril molecules generates fixed inter-particle separations of 0.91 nm. These nanoparticle assemblies possess discrete plasmonic modes which elucidate nanoscale growth and serve as molecular-recognition based SERS substrates.

DC resistance and dielectric function at 3392 nm of YBCO films from 300 K to 80 K

The dielectric function of a YBCO film was determined at 3392nm at temperatures down to 80K. Results obtained were epsilon(i) = -24.09 - 0.0013T and epsilon(i) = 7.66 + 0.067T. The results for epsilon(i) are compared with the de resistance of the film. Intrinsic intragrain scattering, elastic and inelastic grain boundary scattering and optical interband absorption are estimated as 82%, 5%, 13% and 10% respecively at 0K.

High-temperature stability study of 1 nm Al2O3 deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy

High-resolution soft x-ray photoemission spectroscopy (SXPS) has been used to study the high-temperature thermal stability of ultra-thin atomic layer deposited (ALD) Al2O3 layers (~1 nm) on sulfur passivated and native oxide covered InAs surfaces. While the arsenic oxides were removed from both interfaces following a 600 °C anneal, a residual indium oxide signal remained. No significant differences were observed between the sulfur passivated and native oxide surfaces other than the thickness of the interfacial oxide layer while the Al2O3 stoichiometry remained unaffected by the anneals. The energy band offsets were determined for the Al2O3 on the sulfur passivated InAs surface using both valence band edge and shallow core-level photoemission measurements.