30 resultados para indium arsenide


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The field of surface polariton physics really took off with the prism coupling techniques developed by Kretschmann and Raether, and by Otto. This article reports on the construction and operation of a rotatable, in vacuo, variable temperature, Otto coupler with a coupling gap that can be varied by remote control. The specific design attributes of the system offer additional advantages to those of standard Otto systems of (i) temperature variation (ambient to 85 K), and (ii) the use of a valuable, additional reference point, namely the gap-independent reflectance at the Brewster angle at any given, fixed temperature. The instrument is placed firmly in a historical context of developments in the field. The efficacy of the coupler is demonstrated by sample attenuated total reflectance results on films of platinum, niobium, and yttrium barium copper oxide and on aluminum/gallium arsenide (Al/GaAs) Schottky diode structures. (C) 2000 American Institute of Physics. [S0034-6748(00)02411-4].

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An iron prophyrin complex has been immobilized on the surfaces of platinum, silver, and indium doped-tin oxide coated glass by using the poly(gamma-ethyl L-glutamate)-N-(3-aminopropyl)imidazole derivative 1 as a linking agent, thus allowing-the surface-enhanced resonance Raman and UV-VIS absorption spectra and electrochemical properties of the porphyrin to be studied in solvents in which it is not normally soluble.

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A rectangular waveguide-to-microstrip transition operating at G-band is presented. The E-plane probe, used in the transition, is fabricated on semi-insulating gallium arsenide (SI-GaAs) and it is elevated on the substrate. This configuration reduces interaction with semiconductor material. The elevated probe is suitable for direct integration with monolithic microwave integrated circuits. Measured results show S11 better than 210dB between 150 and 200 GHz and S21 ¼ 2 4dB at centre band (180GHz) for two transitions in back-to-back configuration.

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The Gutmann Acceptor Number (AN), which is a quantitative measure of Lewis acidity, has been estimated using the P-31 NMR chemical shift of a probe molecule, triethylphosphine oxide, for a range of chlorometallate(III) ionic liquids, based on Group 13 metals (aluminium(III), gallium(III) and indium(III)) and the 1-octyl-3-methylimidazolium cation, at different compositions. The results were interpreted in terms of extant speciation studies of chlorometallate(III) ionic liquids, and compared with a range of standard molecular solvents and acids. The value of these data were illustrated in terms of the selection of appropriate ionic liquids for specific applications.

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High-quality luminescent thin films of strontium sulphide (SrS) with excellent stoichiometry have been grown by pulsed-laser deposition. The crystallinity, stoichiometry and cathodoluminescence (CL) have been investigated for the films deposited onto two differently coated glass substrates. Furthermore the importance of post-deposition annealing has been studied. SrS thin films grown at 450 degrees C onto glass substrates coated with tin-doped indium oxide show good crystallinity, with a preferred orientation along the (200) axis. Cerium-doped SrS (SrS:Ce) gives a strong blue CL output at 400 nm. Energy-dispersive X-ray spectroscopy shows that the films are stoichiometric and that the stoichiometry is controllable by varying deposition parameters.

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Indium tin oxide (ITO) was used as a support for IrO2 catalyst in the oxygen evolution reaction. IrO2 nanoparticles were deposited in various loading on commercially available ITO nanoparticle, 17–28 nm in size using the Adam's fusion method. The prepared catalysts were characterised using X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The BET surface area of the support (35 m2/g) was 3 times lower than the unsupported IrO2 (112.7 m2/g). The surface area and electronic conductivity of the catalysts were predominantly contributed by the IrO2. The supported catalysts were tested in a membrane electrode assembly (MEA) for electrolyser operation. The 90% IrO2-ITO gave similar performance (1.74 V@1 A/cm2) to that of the unsupported IrO2 (1.73 V@1 A/cm2) in the MEA polarisation test at 80 °C with Nafion 115 membrane which was attributed to a better dispersion of the active IrO2 on the electrochemically inactive ITO support, giving rise to smaller catalyst particle and thereby higher surface area. Large IrO2 particles on the support significantly reduced the electrode performance. A comparison of TiO2 and ITO as support material showed that, 60% IrO2 loading was able to cover the support surface and giving sufficient conductivity to the catalyst.

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In an effort to develop a novel electronic paper image display technology based on the electrowetting principle, a 3-D electrowetting cell is designed and fabricated, which consists of two 3-D bent electrodes, each having a horizontal surface made of gold and a vertical surface made of indium tin oxide (ITO) glass as a color display window, a layer of dielectric material on the 3-D electrodes, and a highly fluorinated hydrophobic layer on the surface of the dielectric layer. Results of this work show that an electrowetting-induced motion of an aqueous droplet in immiscible oils can be achieved reversibly across the boundary of the horizontal and vertical surfaces of the 3-D electrode surface. It is also shown that the droplet can maintain its wetting state on a vertical sidewall electrode free of a power supplier when the voltage is removed. This phenomenon may form the basis for color contrast modulation applications, where a power-free image display is required, such as electronic paper display technology in the future. (C) 2009 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3100201]

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InP(1 0 0) surfaces were sputtered under ultrahigh vacuum conditions by 5 keV N2+ ions at an angle of incidence of 41° to the sample normal. The fluence, φ, used in this study, varied from 1 × 1014 to 5 × 1018 N2+ cm-2. The surface topography was investigated using field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). At the lower fluences (φ ≤ 5 × 1016 N2+ cm-2) only conelike features appeared, similar in shape as was found for noble gas ion bombardment of InP. At the higher fluences, ripples also appeared on the surface. The bombardment-induced topography was quantified using the rms roughness. This parameter showed a linear relationship with the logarithm of the fluence. A model is presented to explain this relationship. The ripple wavelength was also determined using a Fourier transform method. These measurements as a function of fluence do not agree with the predictions of the Bradley-Harper theory. © 2004 Elsevier B.V. All rights reserved.

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We report the synthesis of polymersome-forming block copolymers using two different synthetic routes based on Atom Transfer Radical Polymerization (ATRP) and Reversible Addition Fragmentation chain Transfer (RAFT) polymerization, respectively. Functionalization with 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid (DOTA) allowed the block copolymer chains to be labelled with electron-dense metal ions (e.g. indium). The resulting metal-conjugated copolymers can be visualized by transmission electron microscopy with single chain resolution, hence enabling the study of polymer/polymer immiscibility and phase separation on the nano-scale.

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Indium trichloride catalysed Diels-Alder reaction of imines derived from anilines with cyclic enamides regioselectively gave the biologically important pyrroloquinoline nucleus, with a cis ring junction, in moderate yield. Although the euo:endo selectivity was in most cases poor, these isomers are readily separated by flash chromatography. The functionality tolerated at both C2 and C7 should allow further elaboration to Martinelline (C) 1999 Published by Elsevier Science Ltd. All rights reserved.

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High resolution synchrotron radiation core level photoemission measurements have been used to undertake a comparative study of the high temperature stability of ultrathin Al2O3 layers deposited by atomic layer deposition (ALD) on both sulphur passivated and native oxide covered InGaAs. The residual interfacial oxides between sulphur passivated InGaAs and the ultrathin Al2O3 layer can be substantially removed at high temperature (up to 700 °C) without impacting on the InGaAs stoichiometry while significant loss of indium was recorded at this temperature on the native oxide InGaAs surface.

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Ternary compounds of copper indium selenide nano- and microsized materials were prepared through colloidal synthesis using an indium(III) selenide precursor and copper(I) chloride via a microwave-assisted ionothermal route. The indium(III) selenide precursor used in the reaction was formed in situ from a diphenyl diselenide precursor and chloroindate(III) ionic liquids (ILs), also via a microwave-assisted ionothermal route. The crystal structures of three intermediates, namely, CuCl2(OMe)2(H2O)){Cu(PhSeO2)2}n, [CuCl(Se2Ph2)2]n, and [C8mim]3{Cu(I)Cl2Cu(II)OCl8}n, were determined after formation through a ionothermal procedure utilizing metal-containing imidazolium ILs and a selenium precursor with conventional heating. Herein, we compare the use of microwave irradiation over conventional heating with different ILs on the stoichiometry of the resulting products. The influence of the reaction temperature, reaction time, order of addition of reagents, and variation of ILs, which were characterized using PXRD, SEM, and EDX, on the final products was investigated.

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High resolution synchrotron radiation core level photoemission measurements have been used to undertake a comparative study ofthe high temperature thermal stability ofthe ammonium sulphide passivated InGaAs surface and the same surface following the atomic layer deposition (ALD) of an ultrathin (∼1 nm) Al2O3 layer. The solution based ex situ sulphur passivation was found to be effective at removing a significant amount of the native oxides and protecting the surface against re-oxidation upon air exposure. The residual interfacial oxides which form between sulphur passivated InGaAs and the ultrathin Al2O3 layer can be substantially removed at high temperature (up to 700 ◦C) without impacting on the InGaAs stoichiometry while significant loss of indium was recorded at this temperature on the uncovered sulphur passivated InGaAs surface.

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High-resolution soft x-ray photoemission spectroscopy (SXPS) has been used to study the high-temperature thermal stability of ultra-thin atomic layer deposited (ALD) Al2O3 layers (~1 nm) on sulfur passivated and native oxide covered InAs surfaces. While the arsenic oxides were removed from both interfaces following a 600 °C anneal, a residual indium oxide signal remained. No significant differences were observed between the sulfur passivated and native oxide surfaces other than the thickness of the interfacial oxide layer while the Al2O3 stoichiometry remained unaffected by the anneals. The energy band offsets were determined for the Al2O3 on the sulfur passivated InAs surface using both valence band edge and shallow core-level photoemission measurements.

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Nano-scale touch screen thin film have not been thoroughly investigated in terms of dynamic impact analysis under various strain rates. This research is focused on two different thin films, Zinc Oxide (ZnO) film and Indium Tin Oxide (ITO) film, deposited on Polyethylene Terephthalate (PET) substrate for the standard touch screen panels. Dynamic Mechanical Analysis (DMA) was performed on the ZnO film coated PET substrates. Nano-impact (fatigue) testing was performed on ITO film coated PET substrates. Other analysis includes hardness and the elastic modulus measurements, atomic force microscopy (AFM), Fourier Transform Infrared Spectroscopy (FTIR) and the Scanning Electron Microscopy (SEM) of the film surface.
Ten delta of DMA is described as the ratio of loss modulus (viscous properties) and storage modulus (elastic properties) of the material and its peak against time identifies the glass transition temperature (Tg). Thus, in essence the Tg recognizes changes from glassy to rubber state of the material and for our sample ZnO film, Tg was found as 388.3 K. The DMA results also showed that the Ten delta curve for Tg increases monotonically in the viscoelastic state (before Tg) and decreases sharply in the rubber state (after Tg) until recrystallization of ZnO takes place. This led to an interpretation that enhanced ductility can be achieved by negating the strength of the material.
For the nano-impact testing using the ITO coated PET, the damage started with the crack initiation and propagation. The interpretation of the nano-impact results depended on the characteristics of the loading history. Under the nano-impact loading, the surface structure of ITO film suffered from several forms of failure damages that range from deformation to catastrophic failures. It is concluded that in such type of application, the films should have low residual stress to prevent deformation, good adhesive strength, durable and good resistance to wear.