An analysis of VUV C (IV) emission from the JET divertor giving measurements of electron temperatures

A description of the radiation emitted by impurities from within a plasma is crucial if spectral line intensities are to be used in detailed studies, such as the analysis of impurity transport. The simplest and most direct check that can be made on measurements of line intensities is to analyse their ratios with other lines from the same ion. This avoids uncertainties in determining the volume of the emitting plasma and the absolute sensitivity calibration of the spectrometer and, in some cases, the need even for accurate measurements of parameters such as electron density. Consistency is required between the measured line intensity ratios and the theoretical values. The expected consistency has not been found for radiation emitted from the JET scrape-off layer (e.g. Lawson et al 2009a JINST 4 P04013), meaning that the description of the spectral line intensities of impurity emission from the plasma edge is incomplete. In order to gain further understanding of the discrepancies, an analysis has been carried out for emission from the JET divertor plasma and this is reported in this paper. Carbon was the main low Z intrinsic impurity in JET and an analysis of spectral line intensity ratios has been made for the C (IV) radiation emitted from the JET divertor. In this case, agreement is found between the measured and theoretical ratios to a very high accuracy, namely to within the experimental uncertainty of similar to +/- 10%. This confirms that the description of the line intensities for the present observations is complete. For some elements and ionization stages, an analysis of line intensity ratios can lead to the determination of parameters such as the electron temperature of the emitting plasma region and estimates of the contribution of recombination to the electron energy level populations. This applies to C (IV) and, to show the value and possibilities of the spectral measurements, these parameters have been calculated for a database of Ohmic and additionally heated phases of a large number of pulses. The importance of dielectronic, radiative and charge-exchange recombination as well as ionization has been investigated. In addition, the development of T-e throughout two example discharges is illustrated. The presented results indicate a number of areas for further investigation.

The Langmuir probe as a diagnostic of the electron component within low temperature laser ablated plasma plumes

A Langmuir probe has been used as a diagnostic of the temporally evolving electron component within a laser ablated Cu plasma expanding into vacuum, for an incident laser power density on target similar to that used for the pulsed laser deposition of thin films. Electron temperature data were obtained from the retarding region of the probe current/voltage (I/V) characteristic, which was also used to calculate an associated electron number density. Additionally, electron number density data were obtained from the saturation electron current region of the probe (I/V) characteristic. Electron number density data, extracted by the two different techniques, were observed to show the same temporal form, with measured absolute values agreeing to within a factor of 2. The Langmuir probe, in the saturation current region, has been shown for the first time to be a convenient diagnostic of the electron component within relatively low temperature laser ablated plasma plumes. (C) 1999 American Institute of Physics. [S0034-6748(99)01503-8].

Poincare Analysis of Non-linear Electromagnetic Modes in Electron-Positron Plasmas

We present an investigation of coupled nonlinear electromagnetic modes in an electron-positron plasma by using the well established technique of Poincaré surface of section plots. A variety of nonlinear solutions corresponding to interesting coupled electrostatic-electromagnetic modes sustainable in electron-positron plasmas is shown on the Poincaré section. A special class of localized solitary wave solution is identified along a separatrix curve and its importance in the context of electromagnetic wave propagation in an electron-positron plasma is discussed.

Microstructural analysis of non-woven fabrics using scanning electron microscopy and image processing. Part 1:Development and verification of the methods

This paper reports image analysis methods that have been developed to study the microstructural changes of non-wovens made by the hydroentanglement process. The validity of the image processing techniques has been ascertained by applying them to test images with known properties. The parameters in preprocessing of the scanning electron microscope (SEM) images used in image processing have been tested and optimized. The fibre orientation distribution is estimated using fast Fourier transform (FFT) and Hough transform (HT) methods. The results obtained using these two methods are in good agreement. The HT method is more demanding in computational time compared with the Fourier transform (FT) method. However, the advantage of the HT method is that the actual orientation of the lines can be concluded directly from the result of the transform without the need for any further computation. The distribution of the length of the straight fibre segments of the fabrics is evaluated by the HT method. The effect of curl of the fibres on the result of this evaluation is shown.

Microstructural analysis of non-woven fabrics using scanning electron microscopy and image processing. Part 2:Application to hydroentangled fabrics

The image analysis techniques developed in Part 1 to study microstructural changes in non-woven fabrics are applied to measure the fibre orientation distribution and fibre length distribution of hydroentangled fabrics. The results are supported by strength and modulus measurements using samples from the same fabrics. It is shown that the techniques developed can successfully be used to assess the degree of entanglement of hydroentangled fabrics regardless of their thickness.

A hydrogel based zinc(ii) sensor for use in fluorescent multi-well plate analysis

A polymeric hydrogel containing a photoinduced electron transfer (PET) based probe for Zn(ii) has been formulated into the wells of a 96-well plate. Upon addition of Zn(ii) ions to selected wells, the fluorescence of the gel was observed to increase in a concentration dependent manner in the 0.25-1.75 mM range. The millimolar binding constant observed for this probe is higher than that reported for other Zn(ii) probes in the literature and offers the possibility to determine the concentration of this ion in environments where the Zn(ii) concentration is high. The combination of the multi-well plate set-up with fluorescence detection offers the possibility of high-throughput screening using low sample volumes in a timely manner. To the best of our knowledge, this is the first reported example of a polymeric hydrogel sensor for zinc with capability for use in fluorescence multi-well plate assay.

Dengue Envelope Domain III-Peptide Binding Analysis via Tryptophan Fluorescence Quenching Assay

In the efforts to find an anti-viral treatment for dengue, a simple tryptophan fluorescence-screening assay aimed at identifying dengue domain III envelope (EIII) protein inhibitors was developed. Residue Trp391 of EIII was used as an intrinsic probe to monitor the change in fluorescence of the tryptophan residue upon binding to a peptide. The analysis was based on the electron excitation at 280 nm and fluorescence emission at 300–400 nm of EIII, followed by quenching of fluorescence in the presence of potential peptidic inhibitors coded DS36wt, DS36opt, DN58wt and DN58opt. The present study found that the fluorescence of the recombinant EIII was quenched following the binding of DS36opt, DN58wt and DN58opt ina concentration-dependent manner. Since the λmax for emission remained unchanged, the effect was not dueto a change in the environment of the tryptophan side chain. In contrast, a minimal fluorescence-quenching effect of DS36wt at 20 and 40 µM suggested that the DS36wt does not have any binding ability to EIII. This was supported by a simple native-page gel retardation assay that showed a band shift of EIII domain whenincubated with DS36opt, DN58wt and DN58opt but not with DS36wt. We thus developed a low-cost and convenientspectrophotometric binding assay for the analysis of EIII–peptide interactions in a drug screening application.

Electron-Impact Uncertainty Analysis and its Impact on Certain Temperature Diagnostics

In this study we calculate the electron-impact uncertainties in atomic data for direct ionization and recombination and investigate the role of these uncertainties on spectral diagnostics. We outline a systematic approach to assigning meaningful uncertainties that vary with electron temperature. Once these uncertainty parameters have been evaluated, we can then calculate the uncertainties on key diagnostics through a Monte Carlo routine, using the Astrophysical Emission Code (APEC) [Smith et al. 2001]. We incorporate these uncertainties into well known temperature diagnostics, such as the Lyman alpha versus resonance line ratio and the G ratio. We compare these calculations to a study performed by [Testa et al. 2004], where significant discrepancies in the two diagnostic ratios were observed. We conclude that while the atomic physics uncertainties play a noticeable role in the discrepancies observed by Testa, they do not explain all of them. This indicates that there is another physical process occurring in the system that is not being taken into account. This work is supported in part by the National Science Foundation REU and Department of Defense ASSURE programs under NSF Grant no. 1262851 and by the Smithsonian Institution.

Analysis of the fast electron scaling theory for the heating of a solid target

Simple scaling laws for laser-generated fast electron heating of solids that employ a Spitzer-like resistivity are unlikely to be universally adequate as this model does not produce an adequate description of a material's behaviour at low temperatures. This is demonstrated in this paper by using both numerical simulations and by comparing existing analytical scaling laws for low temperature resistivity. Generally, we find that, in the low temperature regime, the scaling for the heating of the background material has a much stronger dependence on the key empirical parameters (laser intensity, pulse duration, etc.).

Double-electron above threshold ionization of helium

We present calculations of intense-field multiphoton ionization processes in helium at XUV wavelengths. The calculations are obtained from a full-dimensional integration of the two-electron time-dependent Schrödinger equation. A momentum-space analysis of the ionizing two-electron wavepacket reveals the existence of double-electron above threshold ionization (DATI). In momentum-space two distinct forms of DATI are resolved, namely non-sequential and sequential. In non-sequential DATI correlated electrons resonantly absorb and share energy in integer units of Ïlaser.

Analysis and Synthesis of pHEMT Class-E Amplifiers with Shunt Inductor including ON-State Active-Device Resistance Effects

In this theoretical paper, the analysis of the effect that ON-state active-device resistance has on the performance of a Class-E tuned power amplifier using a shunt inductor topology is presented. The work is focused on the relatively unexplored area of design facilitation of Class-E tuned amplifiers where intrinsically low-output-capacitance monolithic microwave integrated circuit switching devices such as pseudomorphic high electron mobility transistors are used. In the paper, the switching voltage and current waveforms in the presence of ON-resistance are analyzed in order to provide insight into circuit properties such as RF output power, drain efficiency, and power-output capability. For a given amplifier specification, a design procedure is illustrated whereby it is possible to compute optimal circuit component values which account for prescribed switch resistance loss. Furthermore, insight into how ON-resistance affects transistor selection in terms of peak switch voltage and current requirements is described. Finally, a design example is given in order to validate the theoretical analysis against numerical simulation.