Quality factor assessment of subwavelength resonant cavities at FIR frequencies

Subwavelength resonators at FIR are presented and studied. The structures consist of 1D cavities formed between a metallized (silver) surface and a metamaterial surface comprising a periodic array of silver patches on a silver-backed silicon substrate. The concept derives from recent discoveries of artificial magnetic conductors (AMC). By studying the currents excited on the metamaterial surface by a normally incident plane wave, the nature of the emerging resonant phenomena and the physical mechanism underlying the AMC operation are investigated. Full wave simulations, based on finite element method and time-domain transmission line modelling technique, have been carried out to demonstrate the effective AMC boundary condition and prove the possibilities for subwavelength cavities. The quality factor of the resonant cavities is assessed as a function of the cavity profile. It is demonstrated that the quality factor drops to about 1/8 of the half-wavelength value for lambda/8 resonant cavity.

Periodically loaded dipole array supporting left-handed propagation

Periodically loaded dipole arrays printed on grounded dielectric substrate are shown to exhibit left-handed propagation properties. In an equivalent transmission line representation, lefthandedness emerges due to the excess series capacitance and shunt inductance. Based on this concept, the authors study the distribution of the modal fields and the variation of series capacitance and shunt inductance as the dipoles are loaded with stubs. Full wave dispersion curves that show the gradual transition from a right-handed to a left-handed medium upon periodically loading the dipoles with stubs are presented. An equivalent circuit is derived that matches to a very good extent the full wave result. The cell dimensions are a small fraction of the wavelength (),15), so the structure can be considered as an equivalent homogeneous surface. The structure is simple, readily scalable to higher frequencies and compatible with low-cost fabrication techniques.

Uniplanar left-handed artificial metamaterials

Planar periodic arrays of metallic elements printed on grounded dielectric substrates are presented to exhibit left-handed properties for surface wave propagation. The proposed structures dispense with the need for grounding vias and ease the implementation of uniplanar left-handed metamaterials at higher frequencies. A transmission line description is used for the initial design and interpretation of the left-handed property. A thorough study based on full wave simulations is carried out with regards to the effect of the element geometrical characteristics and the array periodicity to the properties of the artificial material. Dispersion curves are presented and studied. The distribution of the modal fields in the unit cell is also studied in order to provide an explanation of the material properties. The scalability of the proposed structures to infrared frequencies is demonstrated.

Passive intermodulation in finite lengths of printed microstrip lines

This paper addresses the theoretical aspects of passive intermodulation (PIM) generation in printed transmission lines. In order to elucidate the mechanisms of PIM generation, a new model of the transmission line length with distributed nonlinearity is proposed. The developed model has been validated by the near-field measurements of PIM product distributions along the microstrip lines. The contributions of nonlinear mixing, power dissipation, and load matching to PIM products have been analyzed in detail. The obtained results reveal the fundamental properties of PIM generation in finite lengths of printed lines with distributed non-linearity and identify possible means for PIM mitigation. It was shown for the first time that the reverse PIM products in a matched transmission line with distributed nonlinearity are generated due to nonlinear scattering. © 2008 IEEE.

Design technique for mm-wave IC realization of the load network of switched-mode class-EF power amplifier

Analysis and synthesis of the new Class-EF power amplifier (PA) are presented in this paper. The proposed circuit offers means to alleviate some of the major issues faced by existing Class-EF and Class-EF PAs, such as (1) substantial power losses due to parasitic resistance of the large inductor in the Class-EF load network, (2) unpredictable behaviour of practical lumped inductors and capacitors at harmonic frequencies, and (3) deviation from ideal Class-EF operation mode due to detrimental effects of device output inductance at high frequencies. The transmission-line load network of the Class-EF PA topology elaborated in this paper simultaneously satisfies the Class-EF optimum impedance requirements at fundamental frequency, second, and third harmonics as well as simultaneously providing matching to the circuit optimum load resistance for any prescribed system load resistance. Furthermore, an elegant solution using an open and short-circuit stub arrangement is suggested to overcome the problem encountered in the mm-wave IC realizations of the Class-EF PA load network due to lossy quarter-wave line. © 2010 IEICE Institute of Electronics Informati.

High-efficiency low-voltage-stress Class-EF PA with extended maximum operating frequency

The Class-EF power amplifier (PA) introduced recently has a peak switch voltage much lower than the well-known Class-E PA. However, the value of the transistor output capacitance at high frequencies is typically larger than the required Class-EF optimum shunt capacitance. As a result, softswitching operation that minimizes power dissipation during OFF-to-ON transient cannot be achieved at high frequencies. A novel Class-EF topology with transmission-line load network proposed in this paper allows the PA to operate at much higher frequencies without trading the other figures of merit. Closed-form formulations are derived to simultaneously satisfy the Class-EF impedances requirement at fundamental frequency, all even harmonics, and the first two odd harmonics as well as to provide matching to 50O load. © 2011 Institut fur Mikrowellen.

Phenomenology of Resonance Reflectance by Intertwined Spiral Arrays

The physical mechanisms underlying the dramatic reduction of the unit cell electrical size along with broadening fractional bandwidths provided by intertwined spiral arrays are discussed. Based upon this insight, a multi-strip transmission line (MTL) model is developed to analytically estimate the equivalent capacitance and inductance of intertwined spiral array elements in terms of their geometrical parameters. The proposed MTL model enables an accurate prediction of the fundamental resonance characteristics and provides a valuable tool for design of the arrays with the specified frequency response.

Calculation of Critical Clearing Time of Embedded Generation for Relay Setting Based on Optimisation Method

his paper proposes an optimisation-based method to calculate the critical slip (speed) of dynamic stability and critical clearing time (CCT) of a self-excited induction generator (SEIG). A simple case study using the Matlab/Simulink environment has been included to exemplify the optimisation method. Relationships between terminal voltage, critical slip and reactance of transmission line, CCT and inertial constant have been determined, based on which analysis of impact on relaying setting has been further conducted for another simulation case.

A 2.2 GHz High-Efficiency Third-Harmonic-Peaking Class-EF Power Amplifier

This paper presents the design and implementation of a low-voltage-stress Class-EF power amplifier (PA) with extended maximum operating frequency, named as ‘third-harmonic-peaking Class-EF PA’. A novel transmission-line load network is proposed to meet the Class-EF impedance requirements at the fundamental, all even harmonics, and third harmonic components. It also provides an impedance matching to a 50 Ω load. A more effective λ/8 open- and shorted-stub network is deployed at the drain of the transistor replacing the traditional λ/4 transmission line. Implemented using GaN HEMTs, the PA delivered 39.2 dBm output power with 80.5% drain efficiency and 71% PAE at 2.22 GHz.

Idealized Operation of Third-Harmonic-Peaking Class-Ef Power Amplifier with Extended Maximum Operating Frequency

A new variant of Class-EF power amplifier (PA), the so-called third-harmonic-peaking Class-EF, is presented. It inherits a soft-switching operation from the Class-E PA and a low peak switch voltage from the Class-F PA. More importantly, the new topology allows operations at higher frequencies and permits deployment of large transistors which is normally prohibited since they are always accompanied with high output capacitances. Using a simple transmission-line load network, the PA is synthesized to satisfy Class-EF impedances at fundamental frequency, third harmonic, and all even harmonics as well as to simultaneously provide an impedance matching to 50-Ω load.

High-Efficiency Harmonic-Peaking Class-EF Power Amplifiers with Enhanced Maximum Operating Frequency

The recently introduced Class-EF power amplifier (PA) has a peak switch voltage lower than that of the Class-E PA. However, the value of the transistor output capacitance at high frequencies is typically larger than the required Class-EF optimum shunt capacitance. Consequently, soft-switching operation that minimizes power dissipation during off-to-on transition cannot be achieved at high frequencies. Two new Class-EF PA variants with transmission-line load networks, namely, third-harmonic-peaking (THP) and fifth-harmonic-peaking (FHP) Class-EF PAs are proposed in this paper. These permit operation at higher frequencies at no expense to other PA figures of merit. Analytical expressions are derived in order to obtain circuit component values, which satisfy the required Class-EF impedances at fundamental frequency, all even harmonics, and the first few odd harmonics as well as simultaneously providing impedance matching to a 50- Ω load. Furthermore, a novel open-circuit and shorted stub arrangement, which has substantial practical benefits, is proposed to replace the normal quarter-wave line connected at the transistor's drain. Using GaN HEMTs, two PA prototypes were built. Measured peak drain efficiency of 91% and output power of 39.5 dBm were obtained at 2.22 GHz for the THP Class-EF PA. The FHP Class-EF PA delivered output power of 41.9 dBm with 85% drain efficiency at 1.52 GHz.

Analytical model of interwoven spiral arrays

Interweaving planar spiral conductors in doubly periodic arrays enable substantially sub-wavelength resonant response along with broadening fractional bandwidth. A self-contained analytical model is proposed to accurately predict the characteristics of the intertwined quadrifilar spiral array near the fundamental resonance. The model, based upon a multiconductor transmission line (MTL) approach, provides physical insight into the unique properties of the distributed interactions between the interleaved counter-wound spiral arms extended beyond a single unit cell and elucidates the mechanisms underlying the array performance at normal and oblique incidence of TE and TM polarised waves. The developed MTL model is instrumental in the design of the artificial surfaces with the specified response.

Holistic Design Strategy for High-Selectivity Low-Loss Integrated Millimetre-Wave Image-Reject Filters

To alleviate practical limitations in the design of mm-wave on-chip image-reject filters, systematic design methodologies are presented. Three low-order filters with high-selectivity and low-loss characteristics are designed and compared. Transmission zeroes are created by means of a quarter-wave transmission line (filter 1) and a series LC resonator (filters 2 and 3). Implemented on SiGe, the filters occupy 0.125, 0.064, and 0.079 mm2 chip area including pads. The measured transmission
losses across 81-86 GHz E-Band frequency range are 3.6-5.2 dB for filter 1, 3.1-4.7 dB for filter 2 and 3.6-5 dB for filter 3 where rejection levels at the image band are greater than 30 dB.

Non-Markovian qubit dynamics in a circuit-QED setup

We consider a circuit-QED setup that allows the induction and control of non-Markovian dynamics of a qubit. Non-Markovianity is enforced over the qubit by means of its direct coupling to a bosonic mode which is controllably coupled to another qubit-mode system. We show that this configuration can be achieved in a circuit-QED setup consisting of two initially independent superconducting circuits, each formed by one charge qubit and one transmission-line resonator, which are put in interaction by coupling the resonators to a current-biased Josephson junction. We solve this problem exactly and then proceed with a thorough investigation of the emergent non-Markovianity in the dynamics of the qubits. Our study might serve the context for the first experimental assessment of non-Markovianity in a multielement solid-state device.

Polynomial Model for High-Order and Multi-Carrier Passive Intermodulation Products

Passive intermodulation (PIM) often limits the performance of communication systems, particularly in the presence of multiple carriers. Since the origins of the apparently multiple physical sources of nonlinearity causing PIM in distributed circuits are not fully understood, the behavioural models are frequently employed to describe the process of PIM generation. In this paper, a memoryless nonlinear polynomial model, capable of predicting high-order multi-carrier intermodulation products, is deduced from the third-order two-tone PIM measurements on a microstrip transmission line with distributed nonlinearity. The analytical model of passive distributed nonlinearity is implemented in Keysight Technology’s ADS simulator to evaluate the adjacent band power ratio for three-tone signals. The obtained results suggest that the costly multi-carrier test setups can possibly be replaced by a simulation tool based on the properly retrieved nonlinear polynomial model.