26 resultados para Static voltage stability margin


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.The design of a 6T SRAM cell with 20 nm junctionless (JL) MOSFETs is reported. It is shown that a 6T SRAM cell designed with JL MOSFETs achieves a high static noise margin (SNM) of 185 mV, retention noise or hold margin (RNM) of 381 mV and writability current (IWR) of 33 mA along with a low leakage current of 2 pA at a supply voltage (VDD) of 0.9 V for cell and pullup ratios of 1. Results offer a new opportunity to design future SRAM cells with nanoscale JL MOSFETs.

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This paper considers the ways in which structural model parameter variability can in?uence aeroelastic stability. Previous work on formulating the stability calculation (with the Euler equations providing the aerodynamic predictions) is exploited to use Monte Carlo, Interval and Perturbation calculations to allow this question to be investigated. Three routes are identi?ed. The ?rst involves variable normal mode frequencies only. The second involves normal mode frequencies and mode shapes. Finally, the third, in addition to normal mode frequencies and mode shapes, also includes their in?uence on the static equilibrium. Previous work has suggested only considering route 1, which allows signi?cant gains in computational e?ciency if reduced order models can be built for the aerodynamics. However, results in the current paper show that neglecting route 2 can give misleading results for the ?utter onset prediction.

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This paper considers the ways in which structural model parameter variability can influence aeroelastic stability. Previous work on formulating the stability calculation (with the Euler equations providing the aerodynamic predictions) is exploited to use Monte Carlo, interval, and perturbation calculations to allow this question to be investigated. Three routes are identified. The first involves variable normal-mode frequencies only. The second involves normal-mode frequencies and shapes. Finally, the third, in addition to normal-mode frequencies and shapes, also includes their influence on the static equilibrium. Previous work has suggested only considering the first route, which allows significant gains in computational efficiency if reduced-order models can be built for the aerodynamics. However, results in the current paper show that neglecting the mode-shape variation can give misleading results for the flutter-onset prediction, complicating the development of reduced aerodynamic models for variability analysis.

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The chemical and mechanical stability of slag activated with two different concentrations of sodium sulfate (Na2SO4) after exposure to elevated temperatures ranging from 200 to 800 °C with an increment of 200 °C has been examined. Compressive strengths and pH of the hardened pastes before and after the exposure were determined. The various decomposition phases formed were identified using X-ray diffraction, thermogravimetric analysis and scanning electron microscopy. The results indicated that Na2SO4 activated slag has a better resistance to the degradation caused by exposure to elevated temperature up to 600 °C than Portland cement system as its relative strengths are superior. The finer slag and higher Na2SOconcentration gave better temperature resistance. Whilst the pH of the hardened pastes decreased with an increase in temperature, it still maintained a sufficiently high pH for the protection of reinforcing bar against corrosion.

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Electrokinetic process is a potential in situ soil remediation process which transports the contaminants via electromigration and electroosmosis. For organic compounds contaminated soil, Fenton’s reagent is utilized as a flushing agent in electrokinetic process (Electrokinetic-Fenton) so that removal of organic contaminants could be achieved by in situ oxidation/destruction. However, this process is not applied widely in industries as the stability issue for Fenton’s reagent is the main drawback. The aim of this mini review is to summarize the developments of Electrokinetic-Fenton process on enhancing the stability of Fenton’s reagent and process efficiency in past decades. Generally, the enhancements are conducted via four paths: (1) chemical stabilization to delay H2O2 decomposition, (2) increase of oxidant availability by monitoring injection method for Fenton’s reagent, (3) electrodes operation and iron catalysts and (4) operating conditions such as voltage gradient, electrolytes and H2O2 concentration. In addition, the types of soils and contaminants are also showing significant effect as the soil with low acid buffering capacity, adequate iron concentration, low organic matter content and low aromatic ring organic contaminants generally gives better efficiency.

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Reconfigurable bistate metasurfaces composed of interwoven spiral arrays with embedded pin diodes are proposed for single and dual polarisation operation. The switching capability is enabled by pin diodes that change the array response between transmission and reflection modes at the specified frequencies. The spiral conductors forming the metasurface also supply the dc bias for controlling pin diodes, thus avoiding the need of additional bias circuitry that can cause parasitic interference and affect the metasurface response. The simulation results show that proposed active metasurfaces exhibit good isolation between transmission and reflection states, while retaining excellent angular and polarisation stability with the large fractional bandwidth (FBW) inherent to the original passive arrays. © 2014 A. Vallecchi et al.

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The 71 degrees stripe domain patterns of epitaxial BiFeO3 thin films are frequently being explored to achieve new functional properties, dissimilar from the BiFeO3 bulk properties. We show that in-plane switching and out-of-plane switching of these domains behave very differently. In the in-plane configuration the domains are very stable, whereas in the out-of-plane configuration the domains change their size and patterns, depending on the applied switching voltage frequency.

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In this paper, a multi-level wordline driver scheme is presented to improve 6T-SRAM read and write stability. The proposed wordline driver generates a shaped pulse during the read mode and a boosted wordline during the write mode. During read, the shaped pulse is tuned at nominal voltage for a short period of time, whereas for the remaining access time, the wordline voltage is reduced to save the power consumption of the cell. This shaped wordline pulse results in improved read noise margin without any degradation in access time for small wordline load. The improvement is explained by examining the dynamic and nonlinear behavior of the SRAM cell. Furthermore, during the hold mode, for a short time (depending on the size of boosting capacitance), wordline voltage becomes negative and charges up to zero after a specific time that results in a lower leakage current compared to conventional SRAM. The proposed technique results in at least 2× improvement in read noise margin while it improves write margin by 3× for lower supply voltages than 0.7 V. The leakage power for the proposed SRAM is reduced by 2% while the total power is improved by 3% in the worst case scenario for an SRAM array. The main advantage of the proposed wordline driver is the improvement of dynamic noise margin with less than 2.5% penalty in area. TSMC 65 nm technology models are used for simulations.

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This work provides a first-time-study of Azepanium-based ionic liquids (ILs) as electrolyte components for electrochemical double layer capacitors (EDLCs). Herein, two Azepanium-based ILs, namely N-methyl, N-butyl-azepanium bis(trifluoromethanesulfonyl)imide (Azp(14)TFSI) and N-methyl, N-hexyl-azepanium bis(trifluoromethanesulfonyl)imide (Azp(16)TFSI) were compared with the established IL N-butyl, N-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (Pyr(14)TFSI) in terms of viscosity, conductivity, thermal stability and electrochemical behavior in EDLC systems. The ILs' operative potentials were found to be comparable, leading to operative voltages up to 3.5 V without significant electrolyte degradation. 

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An efficient and robust case sorting algorithm based on Extended Equal Area Criterion (EEAC) is proposed in this paper for power system transient stability assessment (TSA). The time-varying degree of an equivalent image system can be deduced by comparing the analysis results of Static EEAC (SEEAC) and Dynamic EEAC (DEEAC), the former of which neglects all time-varying factors while the latter partially considers the time-varying factors. Case sorting rules according to their transient stability severity are set combining the time-varying degree and fault messages. Then a case sorting algorithm is designed with the “OR” logic among multiple rules, based on which each case can be identified into one of the following five categories, namely stable, suspected stable, marginal, suspected unstable and unstable. The performance of this algorithm is verified by studying 1652 contingency cases from 9 real Chinese provincial power systems under various operating conditions. It is shown that desirable classification accuracy can be achieved for all the contingency cases at the cost of very little extra computational burden and only 9.81% of the whole cases need to carry out further detailed calculation in rigorous on-line TSA conditions.

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Because of their extraordinary structural and electrical properties, two dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (~38) and small static power (Pico-Watts), paving the way for low power electronic system in 2D materials.