CHARACTERIZATION OF SURFACE-PLASMONS ON METAL-OXIDE-SEMICONDUCTOR STRUCTURES

Using the Otto (prism-air gap-sample) configuration p-polarized light of wavelength 632.8 nm has been coupled with greater than 80% efficiency to surface plasmons on the aluminium electrode of silicon-silicon dioxide-aluminium structures. The results show that if the average power per unit area dissipated on the metal film exceeds approximately 1 mW mm-2, then the coupling gap and thus the characteristics of the surface plasmon resonance are noticeably altered. In modelling the optical response of such systems the inclusion of both a non-uniform air coupling gap and a thin cermet layer at the aluminium surface may be necessary.

FAST MODE SURFACE-PLASMON DAMPING ON TUNNEL JUNCTION STRUCTURES

Using a prism-air gap-sample (Otto) configuration we have optically excited surface plasmon polaritons at the Ag-air interface of passive Al-Al oxide-Ag tunnel junction structures at wavelength 632.8 nm. It is found that the internal damping of this excitation is more than a factor of 2 greater for samples with a very thin (approximately 15 nm) Ag electrode than for samples with a thicker (approximately 40 nm) Ag electrode. This observation is explained by the fact that the fields of the surface plasmon polariton penetrate more substantially into the lossy Al base electrode when the Ag top electrode is very thin.

SURFACE-MODE ENHANCED PHOTOCURRENT FROM PTSI/N-SI SCHOTTKY-BARRIER DETECTORS

Using the Otto geometry of attenuated total reflection (prism-air gap-sample), front illuminated PtSi/Si Schottky barrier detectors are shown to exhibit enhanced photocurrent at surface plasmon resonance in the near infrared region. Correlation of the measured photocurrent with the calculated transmittance of light into the Si substate is demonstrated. The transmittance, which is due to surface plasmon re-radiation, is the optical parameter of principal importance in photosignal generation since the photon energies used here are greater than the silicon intrinsic bandgap. The results presented here indicate clearly the important features in optimizing surface plasmon enhancement in photodetection both above and below the silicon absorption edge.

Arenedicarboximide Building Blocks for Fluorescent Photoinduced Electron Transfer pH Sensors Applicable with Different Media and Communication Wavelengths

N-(aminoalkyl)-4-chloronaphthalene-
1,8-dicarboximides 1, N-
(aminoalkyl)-4-acetamidonaphthalene-
1,8-dicarboximides 3 and N,N'-bis(aminoalkyl)-
perylene-3,4:9,10-tetracarboxydiimides
4 show good fluorescent off ±
on switching in aqueous alcoholic solution
with protons as required for fluorescent
PET sensor design. The excitation
wavelengths lie in the ultraviolet
(lmaxˆ345 and 351 nm) for 1 and 3 and
in the blue-green (lmaxˆ528, 492 and
461 nm) for 4; the emission wavelengths
lie in the violet (lmaxˆ408 nm) for 1, in
the blue (lmaxˆ474 nm) for 3 and in the
yellow-orange (lmaxˆ543 and 583 nm)
for 4. Compound 4b shows substantial
fluorescence enhancement with protons
when immobilized in a poly(vinylchloride)
matrix, provided that 2-nitrophenyloctyl
ether plasticizer and potassium
tetrakis(4-chlorophenyl)borate additive
are present to prevent dye crystallization
and to facilitate proton diffusion
into the membrane, respectively.