Design Methodology for Real-Time FPGA-Based Sound Synthesis

Explicit finite difference (FD) schemes can realise highly realistic physical models of musical instruments but are computationally complex. A design methodology is presented for the creation of FPGA-based micro-architectures for FD schemes which can be applied to a range of applications with varying computational requirements, excitation and output patterns and boundary conditions. It has been applied to membrane and plate-based sound producing models, resulting in faster than real-time performance on a Xilinx XC2VP50 device which is 10 to 35 times faster than general purpose and DSP processors. The models have developed in such a way to allow a wide range of interaction (by a musician) thereby leading to the possibility of creating a highly realistic digital musical instrument.

System oriented neural networks - Problem formulation, methodology and application

A novel methodology is proposed for the development of neural network models for complex engineering systems exhibiting nonlinearity. This method performs neural network modeling by first establishing some fundamental nonlinear functions from a priori engineering knowledge, which are then constructed and coded into appropriate chromosome representations. Given a suitable fitness function, using evolutionary approaches such as genetic algorithms, a population of chromosomes evolves for a certain number of generations to finally produce a neural network model best fitting the system data. The objective is to improve the transparency of the neural networks, i.e. to produce physically meaningful

Source/drain extension region engineering in nanoscale double gate SOI MOSFETs: Novel design methodology for low-voltage analog applications

The present paper proposes for the first time, a novel design methodology based on the optimization of source/drain extension (SDE) regions to significantly improve the trade-off between intrinsic voltage gain (A(vo)) and cut-off frequency (f(T)) in nanoscale double gate (DG) devices. Our results show that an optimally designed 25 nm gate length SDE region engineered DG MOSFET operating at drain current of 10 mu A/mu m, exhibits up to 65% improvement in intrinsic voltage gain and 85% in cut-off frequency over devices designed with abrupt SIDE regions. The influence of spacer width, lateral source/drain doping gradient and symmetric as well as asymmetrically designed SDE regions on key analog figures of merit (FOM) such as transconductance (g(m)), transconductance-to-current ratio (g(m)/I-ds), Early voltage (V-EA), output conductance (g(ds)) and gate capacitances are examined in detail. The present work provides new opportunities for realizing future low-voltage/low-power analog circuits with nanoscale SDE engineered DG MOSFETs. (C) 2007 Elsevier B.V. All rights reserved.