69 resultados para Technological physics
Resumo:
Mixed-mode simulation, where device simulation is embedded directly within a circuit simulator, is used for the first time to provide scaling guidelines to achieve optimal digital circuit performance for double gate SOI MOSFETs. This significant advance overcomes the lack of availability of SPICE model parameters. The sensitivity of the gate delay and on-off current ratio to each of the key geometric and technological parameters of the transistor is quantified. The impact of the source-drain doping profile on circuit performance is comprehensively investigated.
Resumo:
The role of the crystalline orientation of the STM tip in the generation of metal clusters is studied by atom dynamics simulations. When a (111) facet is facing the surface, the process is accompanied by a perturbation of the surface stronger than that observed for more open tip structures. This implies a technological application: the possibility of orienting a nanocrystallite deposited on a tip according to the changes observed in the force on the tip.
Resumo:
Six challenges are discussed. These are the laser-driven helium atom; the laser-driven hydrogen molecule and hydrogen molecular ion: electron scattering (with ionization) from one-electron atoms; the vibrational and rotational structure of molecules such as H-3(+) and water at their dissociation limits; laser- heated clusters; and quantum degeneracy and Bose-Einstein condensation. The first four concern fundamental few-body systems where use of high-performance computing (HPC) is currently making possible accurate modelling from first principles. This leads to reliable predictions and support for laboratory experiment as well as true understanding of the dynamics. Important aspects of these challenges addressable only via a terascale facility are set out. Such a facility makes the last two challenges in the above list meaningfully accessible for the first time, and the scientific interest together with the prospective role for HPC in these is emphasized.
Resumo:
Endohedral fullerenes have been proposed for a number of technological uses, for example, as a nanoscale switch, memory bit and as qubits for quantum computation. For these technology applications, it is important to know the ease with which the endohedral atom can be manipulated using an applied electric field. We find that the Buckminsterfullerene (C-60) acts effectively as a small Faraday cage, with only 25% of the field penetrating the interior of the molecule. Thus influencing the atom is difficult, but as a qubit the endohedral atom should be well shielded from environmental electrical noise. We also predict how the field penetration should increase with the fullerene radius. (C) 2004 American Institute of Physics.
Resumo:
Background. Concept analysis has identified three domains in the competent use of birth technology â?? interpersonal skills, professional knowledge and clinical proficiency â?? and tentative criteria for birth technology competence. Aim. Fieldwork was undertaken to observe, confirm and explore pre-defined attributes of birth technology competence. Method. The Swartz-Barcott and Kim (2000) hybrid model of concept development was expanded to include an ethnographic observation of theory in action. Findings. Key attributes of birth technology competence found in â??real-worldâ?? midwifery practice were skills in using the machines, decision-making and traditional midwifery skills. Conclusions. The confusion surrounding the use of technology in midwifery practice needs to be addressed by both professionals and educationalists. Midwives should be taught to value traditional midwifery skills alongside those of machine skills. The identification of a model of appropriate technology use is needed in midwifery.
Resumo:
Magnetic neutral loop discharges (NLDs) can be operated at significantly lower pressures than conventional radio-frequency (rf) inductively coupled plasmas (ICPs). These low pressure conditions are favourable for technological applications, in particular anisotropic etching. An ICP–NLD has been designed providing excellent diagnostics access for detailed investigations of fundamental mechanisms. Spatially resolved Langmuir probe measurements have been performed in the plasma production region (NL region) as well as in the remote application region downstream from the NL region. Depending on the NL gradient two different operation modes have been observed exhibiting different opportunities for control of plasma uniformity. The efficient operation at comparatively low pressures results in ionization degrees exceeding 1%. In this regime neutral dynamics has to be considered and can influence neutral gas and process uniformity. Neutral gas depletion through elevated gas temperatures and high ionization rates have been quantified. At pressures above 0.1 Pa, gas heating is the dominant depletion mechanism. At lower pressures neutral gas is predominantly depleted through high ionization rates and rapid transport of ions by ambipolar diffusion along the magnetic field lines. Non-uniform profiles of the ionization rate can, therefore, result in localized neutral gas depletion and non-uniform processing. We have also investigated the electron dynamics within the radio-frequency cycle using phase resolved optical emission spectroscopy and Thomson scattering. In these measurements electron drift phenomena along the NL torus have been identified.