71 resultados para High energy photons
Resumo:
By using polycapillary lenses to focus laser-produced x-ray sources to high intensities, an improvement in signal-to-noise ratio can be achieved. Here the He-alpha line emission produced by driving a titanium backlighter target is focused by a polycapillary lens and the output characterized. The x-ray spot is measured to have a peak intensity of 4.5 x 10(7) photons, with a total photon count of 8.8 x 10(8) in 0.13 +/- 0.01 mm(2). This setup is equivalent to placing the backlighter target 3 mm from the sample with a 600 mu m diameter pinhole. The polycapillary lens enables the placement of the backlighter target at a much larger distance from the sample to be studied and therefore has the ability to greatly improve the signal-to-noise ratio on detectors. We demonstrate this with two simple diffraction experiments using pyrolytic graphite and polycrystalline aluminium.
Resumo:
A scheme for enhanced quantum electrodynamics (QED) production of electron-positron-pair plasmas is proposed that uses two ultraintense lasers irradiating a thin solid foil from opposite sides. In the scheme, under a proper matching condition, in addition to the skin-depth emission of gamma-ray photons and Breit-Wheeler creation of pairs on each side of the foil, a large number of high-energy electrons and photons from one side can propagate through it and interact with the laser on the other side, leading to much enhanced gamma-ray emission and pair production. More importantly, the created pairs can be collected later and confined to the center by opposite laser radiation pressures when the foil becomes transparent, resulting in the formation of unprecedentedly overdense and high-energy pair plasmas. Two-dimensional QED particle-in-cell simulations show that electron-positron-pair plasmas with overcritical density 10(22) cm(-3) and a high energy of 100s of MeV are obtained with 10 PW lasers at intensities 10(23) W/cm(2), which are of key significance for laboratory astrophysics studies.
Resumo:
γ-Ray sources are among the most fundamental experimental tools currently available to modern physics. As well as the obvious benefits to fundamental research, an ultra-bright source of γ-rays could form the foundation of scanning of shipping containers for special nuclear materials and provide the bases for new types of cancer therapy.
However, for these applications to prove viable, γ-ray sources must become compact and relatively cheap to manufacture. In recent years, advances in laser technology have formed the cornerstone of optical sources of high energy electrons which already have been used to generate synchrotron radiation on a compact scale. Exploiting the scattering induced by a second laser, one can further enhance the energy and number of photons produced provided the problems of synchronisation and compact γ-ray detection are solved.
Here, we report on the work that has been done in developing an all-optical and hence, compact non-linear Thomson scattering source, including the new methods of synchronisation and compact γ-ray detection. We present evidence of the generation of multi-MeV (maximum 16–18 MeV) and ultra-high brilliance (exceeding 1020 photons s−1mm−2mrad−2 0.1% BW at 15 MeV) γ-ray beams. These characteristics are appealing for the paramount practical applications mentioned above.
Resumo:
Electron energy distributions of singly and doubly ionized helium in an intense 390 nm laser field have been measured at two intensities (0.8 PW/cm(2) and 1.1 PW/cm(2), where PW equivalent to 10(15) W/cm(2)). Numerical solutions of the full-dimensional time-dependent helium Schrodinger equation show excellent agreement with the experimental measurements. The high-energy portion of the two-electron energy distributions reveals an unexpected 5U(p) cutoff for the double ionization (DI) process and leads to a proposed model for DI below the quasiclassical threshold.
Resumo:
Silicon on Insulator (SOI) substrates offer a promising platform for monolithic high energy physics detectors with integrated read-out electronics and pixel diodes. This paper describes the fabrication and characterisation of specially-configured SOI substrates using improved bonded wafer ion split and grind/polish technologies. The crucial interface between the high resistivity handle silicon and the SOI buried oxide has been characterised using both pixel diodes and circular geometry MOS transistors. Pixel diode breakdown voltages were typically greater than 100V and average leakage current densities at 70 V were only 55 nA/ sq cm. MOS transistors subjected to 24 GeV proton irradiation showed an increased SOI buried oxide trapped charge of only 3.45x1011cn-2 for a dose of 2.7Mrad
Resumo:
The dynamics of the focusing of laser-driven ion beams produced from concave solid targets was studied. Most of the ion beam energy is observed to converge at the center of the cylindrical targets with a spot diameter of 30 mu m, which can be very beneficial for applications requiring high beam energy densities. Also, unbalanced laser irradiation does not compromise the focusability of the beam. However, significant filamentation occurs during the focusing, potentially limiting the localization of the energy deposition region by these beams at focus. These effects could impact the applicability of such high-energy density beams for applications, e. g., in proton-driven fast ignition.