Magnetic field induced entropy change and magnetoelasticity in Ni-Mn-Ga alloys

The magnetocaloric effect that originates from the martensitic transition in the ferromagnetic Ni-Mn-Ga shape-memory alloy is studied. We show that this effect is controlled by the magnetostructural coupling at both the martensitic variant and magnetic domain length scales. A large entropy change induced by moderate magnetic fields is obtained for alloys in which the magnetic moment of the two structural phases is not very different. We also show that this entropy change is not associated with the entropy difference between the martensitic and the parent phase arising from the change in the crystallographic structure which has been found to be independent of the magnetic field within this range of fields.

Magnetoresistance at artificial interfaces in the itinerant SrRuO3 ferromagnet

The magnetoresistance across interfaces in the itinerant ferromagnetic oxide SrRuO3 have been studied. To define appropriately the interfaces, epitaxial thin films have been grown on bicrystalline and laser-patterned SrTiO3 substrates. Comparison is made with results obtained on similar experiments using the double-exchange ferromagnetic oxide La2/3Sr1/3MnO3. It is found that in SrRuO3, interfaces induce a substantial negative magnetoresistance, although no traces of the low-field spin tunneling magnetoresistance are found. We discuss these results on the basis of the distinct degree of spin polarization in ruthenates and manganites and the different nature of the surface magnetic layer formed at interfaces.

Enhanced electron-electron correlations in nanometric epitaxial SrRuO3 epitaxial films

Epitaxial and fully strained SrRuO3 thin films have been grown on SrTiO3(100). At initial stages the growth mode is three-dimensional- (3D-)like, leading to a finger-shaped structure aligned with the substrate steps and that eventually evolves into a 2D step-flow growth. We study the impact that the defect structure associated with this unique growth mode transition has on the electronic properties of the films. Detailed analysis of the transport properties of nanometric films reveals that microstructural disorder promotes a shortening of the carrier mean free path. Remarkably enough, at low temperatures, this results in a reinforcement of quantum corrections to the conductivity as predicted by recent models of disordered, strongly correlated electronic systems. This finding may provide a simple explanation for the commonly observed¿in conducting oxides-resistivity minima at low temperature. Simultaneously, the ferromagnetic transition occurring at about 140 K, becomes broader as film thickness decreases down to nanometric range. The relevance of these results for the understanding of the electronic properties of disordered electronic systems and for the technological applications of SrRuO3¿and other ferromagnetic and metallic oxides¿is stressed.

Evaluación de la conectividad cerebral bajo fármacos mediante análisis no lineal del EEG

Màster Oficial en Enginyeria Biomèdica

Time-dependent heat capacity of Mn12 clusters

In this paper we discuss both theoretical and experimental results on the time dependence of the heat capacity of oriented Mn12 magnetic clusters when a magnetic field is applied along their easy axis. Our calculations are based on the existence of two contributions. The first one is associated with the thermal populations of the 21 different Sz levels in the two potential wells of the magnetic uniaxial anisotropy and the second one is related to the transitions between the Sz levels. We compare our theoretical predictions with experimental data on the heat capacity for different resolution times at different fields and temperatures.