13 resultados para Fines (Penalties).

em Diposit Digital de la UB - Universidade de Barcelona


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En los últimos años, es cada vez más frecuente que las necesidades puntuales de personal que tienen las empresas se cubran mediante trabajadores adscritos a una ETT. El elevado grado de aceptación de la contratación a través de esta vía no sólo deriva del hecho de ser un medio más flexible de contratación, sino tambien de los menores costes salariales que implican la contratación de trabajadores de empresas de trabajo temporal; siendo este el principio incentivo para su utilización. Así pues, el recurso de la contratación de los trabajadores de las empresas de trabajo temporal no sólo constituye un medio para atender a necesidades temporales de la empresa usuaria, sino que además se ha constituido en un medio de reducir los costes salariales. El aspecto más destacable de la relación que se crea , desde el punto de vista del trabajador, es que el empleador es la ETT, pese a que la prestación se realiza, fisicamente en la empresa usuaria. La contratación de trabajadores con la finalidad de cederlos con carácter temporal a otras empresas para hacer frente a necesidades conyunturales ha sido tradicionalmente prohibida por los ordenamientos laborales y considerada como tráfico ilegal de mano de obra, asimilándola a la actividad de intermediación en el mercado de trabajo con fines lucrativos, por estimar que ambas figuras podían atentar contra derechos fundamentales de los trabajadores. Sin embargo desde finales de la decada de los sesenta, los países centrales de la Unión Europea, teniendo ratificado, al igual que España, el convenio 96 de la OIT, han venido regulando la actividad de las empresas de trabajo temporal por entender que su actuación, cuando se desarrolla de forma debidamente controlada, lejos de perjudicar a los trabajadores por ellas contratados pueden canalizar un volumen muy importante de empleo cuya especialización e inmediatez en la respuesta, sobre todo en el sector de servicios, no puede ofrecerse a través de mecanismos tradicionales. Por otra parte, para los trabajadores constituye un mecanismo importante para acceder a la actividad laboral y familiarizarse con la vida de la empresa, posibilitando además una cierta diversificación profesional y formación polivalente, a la vez, que en determinados casos, facilita a ciertos colectivos un sistema de trabajo que les permiter compaginar la actividad laboral con otras ocupaciones no productivas o responsabilidades familiares. La puesta en marcha de la legislación reguladora del trabajo temporal ha cubierto un importante vacio que existia en la gestión de las empresas en el área de recursos humanos, fomentando el contrato de carácter fijo y regularizando situaciones de temporalidad.

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Different aspects of the structure-magnetism and morphology-magnetism correlation in the ultrathin limit are studied in epitaxial Fe films grown on MgO(001). In the initial stages of growth the presence of substrate steps, intrinsically higher than an Fe atomic layer, prevent the connection between Fe islands and hence the formation of large volume magnetic regions. This is proposed as an explanation to the superparamagnetic nature of ultrathin Fe films grown on MgO in addition to the usually considered islanded, or Vollmer-Weber, growth. Using this model, we explain the observed transition from superparamagnetism to ferromagnetism for Fe coverages above 3 monolayers (ML). However, even though ferromagnetism and magnetocrystalline anisotropy are observed for 4 ML, complete coverage of the MgO substrate by the Fe ultrathin films only occurs around 6 ML as determined by polar Kerr spectra and simulations that consider different coverage situations. In annealed 3.5 ML Fe films, shape or configurational anisotropy dominates the intrinsic magnetocrystalline anisotropy, due to an annealing induced continuous to islanded morphological transition. A small interface anisotropy in thicker films is observed, probably due to dislocations observed at the Fe¿MgO(001) interface.

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The process of hydrogen desorption from amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two exothermic peaks centered at 330 and 410 C have been detected with energies per H atom of about 50 meV. This value has been compared with the results of theoretical calculations and is found to agree with the dissociation energy of Si-H groups of about 3.25 eV per H atom, provided that the formation energy per dangling bond in a-Si is about 1.15 eV. It is shown that this result is valid for a-Si:H films, too.

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The ac electrical response is studied in thin films composed of well-defined nanometric Co particles embedded in an insulating ZrO2 matrix which tends to coat them, preventing the formation of aggregates. In the dielectric regime, ac transport originates from the competition between interparticle capacitive Cp and tunneling Rt channels, the latter being thermally assisted. This competition yields an absorption phenomenon at a characteristic frequency 1/(RtCp), which is observed in the range 1010 000 Hz. In this way, the effective ac properties mimic the universal response of disordered dielectric materials. Temperature and frequency determine the complexity and nature of the ac electrical paths, which have been successfully modeled by an Rt-Cp network.

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Step bunching develops in the epitaxy of SrRuO3 on vicinal SrTiO3(001) substrates. We have investigated the formation mechanisms and we show here that step bunching forms by lateral coalescence of wedgelike three-dimensional islands that are nucleated at substrate steps. After coalescence, wedgelike islands become wider and straighter with growth, forming a self-organized network of parallel step bunches with altitudes exceeding 30 unit cells, separated by atomically flat terraces. The formation mechanism of step bunching in SrRuO3, from nucleated islands, radically differs from one-dimensional models used to describe bunching in semiconducting materials. These results illustrate that growth phenomena of complex oxides can be dramatically different to those in semiconducting or metallic systems.

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A comparative study of LaxBi1-xMnO3 thin films grown on SrTiO3 substrates is reported. It is shown that these films grow epitaxially in a narrow pressure-temperature range. A detailed structural and compositional characterization of the films is performed within the growth window. The structure and the magnetization of this system are investigated. We find a clear correlation between the magnetization and the unit-cell volume that we ascribe to Bi deficiency and the resultant introduction of a mixed valence on the Mn ions. On these grounds, we show that the reduced magnetization of LaxBi1-xMnO3 thin films compared to the bulk can be explained quantitatively by a simple model, taking into account the deviation from nominal composition and the Goodenough-Kanamori-Anderson rules of magnetic interactions.

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The formation of coherently strained three-dimensional (3D) islands on top of the wetting layer in the Stranski-Krastanov mode of growth is considered in a model in 1 + 1 dimensions accounting for the anharmonicity and nonconvexity of the real interatomic forces. It is shown that coherent 3D islands can be expected to form in compressed rather than expanded overlayers beyond a critical lattice misfit. In expanded overlayers the classical Stranski-Krastanov growth is expected to occur because the misfit dislocations can become energetically favored at smaller island sizes. The thermodynamic reason for coherent 3D islanding is incomplete wetting owing to the weaker adhesion of the edge atoms. Monolayer height islands with a critical size appear as necessary precursors of the 3D islands. This explains the experimentally observed narrow size distribution of the 3D islands. The 2D-3D transformation takes place by consecutive rearrangements of mono- to bilayer, bi- to trilayer islands, etc., after the corresponding critical sizes have been exceeded. The rearrangements are initiated by nucleation events, each one needing to overcome a lower energetic barrier than the one before. The model is in good qualitative agreement with available experimental observations.

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Electron scattering on a thin layer where the potential depends self-consistently on the wave function has been studied. When the amplitude of the incident wave exceeds a certain threshold, a soliton-shaped brightening (darkening) appears on the layer causing diffraction of the wave. Thus the spontaneously formed transverse pattern can be viewed as a self-induced nonlinear quantum screen. Attractive or repulsive nonlinearities result in different phase shifts of the wave function on the screen, which give rise to quite different diffraction patterns. Among others, the nonlinearity can cause self-focusing of the incident wave into a beam, splitting in two "beams," single or double traces with suppressed reflection or transmission, etc.