Magnetoresistance at artificial interfaces in the itinerant SrRuO3 ferromagnet

The magnetoresistance across interfaces in the itinerant ferromagnetic oxide SrRuO3 have been studied. To define appropriately the interfaces, epitaxial thin films have been grown on bicrystalline and laser-patterned SrTiO3 substrates. Comparison is made with results obtained on similar experiments using the double-exchange ferromagnetic oxide La2/3Sr1/3MnO3. It is found that in SrRuO3, interfaces induce a substantial negative magnetoresistance, although no traces of the low-field spin tunneling magnetoresistance are found. We discuss these results on the basis of the distinct degree of spin polarization in ruthenates and manganites and the different nature of the surface magnetic layer formed at interfaces.

Competing tunneling and capacitive paths in Co-ZrO2 granular thin films

The ac electrical response is studied in thin films composed of well-defined nanometric Co particles embedded in an insulating ZrO2 matrix which tends to coat them, preventing the formation of aggregates. In the dielectric regime, ac transport originates from the competition between interparticle capacitive Cp and tunneling Rt channels, the latter being thermally assisted. This competition yields an absorption phenomenon at a characteristic frequency 1/(RtCp), which is observed in the range 1010 000 Hz. In this way, the effective ac properties mimic the universal response of disordered dielectric materials. Temperature and frequency determine the complexity and nature of the ac electrical paths, which have been successfully modeled by an Rt-Cp network.

Enhanced electron-electron correlations in nanometric epitaxial SrRuO3 epitaxial films

Epitaxial and fully strained SrRuO3 thin films have been grown on SrTiO3(100). At initial stages the growth mode is three-dimensional- (3D-)like, leading to a finger-shaped structure aligned with the substrate steps and that eventually evolves into a 2D step-flow growth. We study the impact that the defect structure associated with this unique growth mode transition has on the electronic properties of the films. Detailed analysis of the transport properties of nanometric films reveals that microstructural disorder promotes a shortening of the carrier mean free path. Remarkably enough, at low temperatures, this results in a reinforcement of quantum corrections to the conductivity as predicted by recent models of disordered, strongly correlated electronic systems. This finding may provide a simple explanation for the commonly observed¿in conducting oxides-resistivity minima at low temperature. Simultaneously, the ferromagnetic transition occurring at about 140 K, becomes broader as film thickness decreases down to nanometric range. The relevance of these results for the understanding of the electronic properties of disordered electronic systems and for the technological applications of SrRuO3¿and other ferromagnetic and metallic oxides¿is stressed.

Magnetic field effect on quantum corrections to the low-temperature conductivity in mettalic perovskite oxides

The transport and magnetotransport properties of the metallic and ferromagnetic SrRuO3 (SRO) and the metallic and paramagnetic LaNiO3 (LNO) epitaxial thin films have been investigated in fields up to 55 T at temperatures down to 1.8 K . At low temperatures both samples display a well-defined resistivity minimum. We argue that this behavior is due to the increasing relevance of quantum corrections to the conductivity (QCC) as temperature is lowered; this effect being particularly relevant in these oxides due to their short mean free path. However, it is not straightforward to discriminate between contributions of weak localization and renormalization of electron-electron interactions to the QCC through temperature dependence alone. We have taken advantage of the distinct effect of a magnetic field on both mechanisms to demonstrate that in ferromagnetic SRO the weak-localization contribution is suppressed by the large internal field leaving only renormalized electron-electron interactions, whereas in the nonmagnetic LNO thin films the weak-localization term is relevant.

Giant step bunching from self-organized coalescence of SrRuO3 islands

Step bunching develops in the epitaxy of SrRuO3 on vicinal SrTiO3(001) substrates. We have investigated the formation mechanisms and we show here that step bunching forms by lateral coalescence of wedgelike three-dimensional islands that are nucleated at substrate steps. After coalescence, wedgelike islands become wider and straighter with growth, forming a self-organized network of parallel step bunches with altitudes exceeding 30 unit cells, separated by atomically flat terraces. The formation mechanism of step bunching in SrRuO3, from nucleated islands, radically differs from one-dimensional models used to describe bunching in semiconducting materials. These results illustrate that growth phenomena of complex oxides can be dramatically different to those in semiconducting or metallic systems.

Analisis de un tratamiento individual de danza movimiento terapia en un caso crónico de esquizofrenia residual

En el siguiente estudio presento1 el análisis retrospectivo de un tratamiento individual de 17 sesiones de danza movimiento terapia en un caso crónico de una mujer de 59 años, institucionalizada, con un diagnóstico de esquizofrenia residual. Mi objetivo es evaluar la evolución y conclusión del tratamiento, con el fin de encontrar puntualizaciones de interés en la técnica de la DMT para pacientes con diagnósticos de psicosis y seguir construyendo y fortaleciendo la teoría y técnica de la DMT en esta población. Mis influencias teórico-técnicas provienen principalmente de los modelos de trabajo con pacientes psiquiátricos de Chaiklin y Schmais, S. (1979), Chaiklin, S. (1981), Jones (1992) y Liebowitz (1992). Utilicé las técnicas de la improvisación, el reflejo empático (Sandel, S. 1995), la verbalización (Stark & Lohn, 1995), la imagen, la metáfora y el símbolo (Sandel, S. 1995) y las enseñanzas del sistema de análisis del movimiento de Kestenberg (1999). Las aportaciones sobre creatividad de Brainsky (1988) y Pinchas Noy (1968-1969) me fueron de gran ayuda. Para el análisis triangulo información de varias fuentes: diarios de campo realizados durante el tratamiento junto con sus señalamientos producto de supervisiones y tutorías, la entrevista inicial y final a la paciente y un video analizado con la paciente y posteriormente estudiado bajo la óptica del sistema de análisis del movimiento de Kestenberg (Kestenberg y otros, 1999). Vivencio a través de mi paciente la utilidad y éxito de la DMT en la psicosis y las técnicas que nos permiten acercarnos a esta población. La DMT trabaja la estructura, no exclusivamente el fenómeno psicótico; aunque no se transforme la personalidad se fortalece, permitiéndole al sujeto vivir mejor en su condición, ser más autónomo, eficaz, feliz y móvil. La condición perse del proceso terapéutico con un psicótico es establecer una relación terapéutica para la cual es necesario entender en el cuerpo y en la mente que el funcionamiento de un psicótico no es el mismo que el de un neurótico; la barrera neurótica del terapeuta ha de sobrepasarse para lograr la fusión simbiótica que permitirá el bottom-up del psicótico. Los objetivos de trabajo en el caso individual son: integrar y desarrollar la unidad psiquesoma, contactar y expresar emociones, desarrollar las habilidades interpersonales y sociales, expandir el universo simbólico y desarrollar el movimiento espontáneo y la creatividad. Las fases del tratamiento son: los acercamientos y observaciones preliminares; la exploración del cuerpo, identificación de los focos de trabajo y comienzo de la ampliación del movimiento; la profundización y nacimiento del símbolo en la terapia y la consolidación de los avances y cierre del tratamiento. La técnica principal, es el reflejo empático del movimiento y la emoción en la improvisación y otras útiles, el masaje, automasaje, relajación, el dibujo, entre otras.