Simulation of multigate SOI transistors with silicon, germanium and III-V channels

In this work by employing numerical three-dimensional simulations we study the electrical performance and short channel behavior of several multi-gate transistors based on advanced SOI technology. These include FinFETs, triple-gate and gate-all-around nanowire FETs with different channel material, namely Si, Ge, and III-V compound semiconductors, all most promising candidates for future nanoscale CMOS technologies. Also, a new type of transistor called “junctionless nanowire transistor” is presented and extensive simulations are carried out to study its electrical characteristics and compare with the conventional inversion- and accumulation-mode transistors. We study the influence of device properties such as different channel material and orientation, dimensions, and doping concentration as well as quantum effects on the performance of multi-gate SOI transistors. For the modeled n-channel nanowire devices we found that at very small cross sections the nanowires with silicon channel are more immune to short channel effects. Interestingly, the mobility of the channel material is not as significant in determining the device performance in ultrashort channels as other material properties such as the dielectric constant and the effective mass. Better electrostatic control is achieved in materials with smaller dielectric constant and smaller source-to-drain tunneling currents are observed in channels with higher transport effective mass. This explains our results on Si-based devices. In addition to using the commercial TCAD software (Silvaco and Synopsys TCAD), we have developed a three-dimensional Schrödinger-Poisson solver based on the non-equilibrium Green’s functions formalism and in the framework of effective mass approximation. This allows studying the influence of quantum effects on electrical performance of ultra-scaled devices. We have implemented different mode-space methodologies in our 3D quantum-mechanical simulator and moreover introduced a new method to deal with discontinuities in the device structures which is much faster than the coupled-mode-space approach.

Quantum behavior in mesoscopic systems

In this thesis I present the work done during my PhD. The Thesis is divided into two parts; in the first one I present the study of mesoscopic quantum systems whereas in the second one I address the problem of the definition of Markov regime for quantum system dynamics. The first work presented is the study of vortex patterns in (quasi) two dimensional rotating Bose Einstein condensates (BECs). I consider the case of an anisotropy trapping potential and I shall show that the ground state of the system hosts vortex patterns that are unstable. In a second work I designed an experimental scheme to transfer entanglement from two entangled photons to two BECs. This work is meant to propose a feasible experimental set up to bring entanglement from microscopic to macroscopic systems for both the study of fundamental questions (quantum to classical transition) and technological applications. In the last work of the first part another experimental scheme is presented in order to detect coherences of a mechanical oscillator which is assumed to have been previously cooled down to the quantum regime. In this regime in fact the system can rapidly undergo decoherence so that new techniques have to be employed in order to detect and manipulate their states. In the scheme I propose a micro-mechanical oscillator is coupled to a BEC and the detection is performed by monitoring the BEC with a negligible back-action on the cantilever. In the second part of the thesis I give a definition of Markov regime for open quantum dynamics. The importance of such definition comes from both the mathematical description of the system dynamics and from the understanding of the role played by the environment in the evolution of an open system. In the Markov regime the mathematical description can be simplified and the role of the environment is a passive one.